Method of transferring devices by lateral etching of a sacrificial layer
    1.
    发明授权
    Method of transferring devices by lateral etching of a sacrificial layer 有权
    通过牺牲层的横向蚀刻来传送器件的方法

    公开(公告)号:US06982209B2

    公开(公告)日:2006-01-03

    申请号:US10704795

    申请日:2003-11-12

    CPC classification number: H01L21/76251 H01L21/2007 H01L2221/68368

    Abstract: The present invention relates to a method for transferring devices. A sacrificing layer is positioned before the devices are manufactured, and a transition substrate is pasted on the devices. Then, a method for lateral wet etching or a method for lateral wet etching with mechanical stripping is applied for removing or stripping the sacrificing layer so as to separate the devices and a substrate. The separated devices are transferred to the transition substrate so as to meet the requirements for various products and applications.

    Abstract translation: 本发明涉及一种传送装置的方法。 在制造器件之前定位牺牲层,并且将过渡衬底粘贴在器件上。 然后,应用用于横向湿蚀刻的方法或用于机械剥离的侧向湿法蚀刻的方法来去除或剥离牺牲层以便分离器件和衬底。 分离的装置被转移到过渡基板,以满足各种产品和应用的要求。

    Method of transferring devices
    2.
    发明申请
    Method of transferring devices 有权
    传送设备的方法

    公开(公告)号:US20050032329A1

    公开(公告)日:2005-02-10

    申请号:US10704795

    申请日:2003-11-12

    CPC classification number: H01L21/76251 H01L21/2007 H01L2221/68368

    Abstract: The present invention relates to a method for transferring devices. A sacrificing layer is positioned before the devices are manufactured, and a transition substrate is pasted on the devices. Then, a method for lateral wet etching or a method for lateral wet etching with mechanical stripping is applied for removing or stripping the sacrificing layer so as to separate the devices and a substrate. The separated devices are transferred to the transition substrate so as to meet the requirements for various products and applications.

    Abstract translation: 本发明涉及一种传送装置的方法。 在制造器件之前定位牺牲层,并且将过渡衬底粘贴在器件上。 然后,应用用于横向湿蚀刻的方法或用于机械剥离的侧向湿法蚀刻的方法来去除或剥离牺牲层以便分离器件和衬底。 分离的装置被转移到过渡基板,以满足各种产品和应用的要求。

    Active organic light emitting diode display structure
    4.
    发明授权
    Active organic light emitting diode display structure 有权
    主动有机发光二极管显示结构

    公开(公告)号:US07215073B2

    公开(公告)日:2007-05-08

    申请号:US10673324

    申请日:2003-09-30

    CPC classification number: H01L27/322 H01L27/3244 H01L27/3246 H01L51/5284

    Abstract: The present invention discloses an active organic light emitting diode (AOLED) display structure. A color filter and thin film transistor organic light emitting diode (TFT-OLED) are incorporated on one substrate of the AOLED. Moreover, a Indium Tin Oxide(ITO)layer of the AOLED is deposited with a black matrix layer so as to lower light leakage effect and increase the contrast and color purity level in between pixels of the display. By adopting such technology, a flat panel display having large area, high resolution and low product cost is accordingly implemented.

    Abstract translation: 本发明公开了一种有源有机发光二极管(AOLED)显示结构。 滤色器和薄膜晶体管有机发光二极管(TFT-OLED)结合在AOLED的一个基板上。 此外,AOLED的氧化铟锡(ITO)层沉积有黑矩阵层,以便降低漏光效应并增加显示器的像素之间的对比度和色纯度水平。 通过采用这种技术,可以实现面积大,分辨率高,产品成本低的平板显示器。

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