Method of manufacturing a crown shape capacitor in semiconductor memory
using a single step etching
    152.
    发明授权
    Method of manufacturing a crown shape capacitor in semiconductor memory using a single step etching 失效
    使用单步蚀刻在半导体存储器中制造冠状电容器的方法

    公开(公告)号:US5804489A

    公开(公告)日:1998-09-08

    申请号:US679196

    申请日:1996-07-12

    CPC classification number: H01L27/10852 H01L27/10817

    Abstract: The present invention is a method of manufacturing crown shape capacitors in the semiconducter memories. Using a single step etching to farbricate the capacitor in a DRAM cell. The method can form side wall polymers and etching byproductions on the surface of the first polysilicon, using the side wall polymers and the etching byproductions as a mask to form the crown shape capacitors with pillars. Moreover, this present invention can form the crown shape structure and pillars in the same step, the crown shape structure and the pillars increase the surface area of the capacitor. Therefore the present invention will increase the performance of the capacitor.

    Abstract translation: 本发明是在半导体存储器中制造冠状电容器的方法。 使用单步蚀刻来超越DRAM单元中的电容器。 该方法可以使用侧壁聚合物和蚀刻副产物作为掩模形成侧壁聚合物并在第一多晶硅的表面上蚀刻副产物,以形成具有支柱的冠状电容器。 此外,本发明可以在相同的步骤中形成冠状结构和柱,冠状结构和柱增加电容器的表面积。 因此,本发明将增加电容器的性能。

    Method for fabricating a semiconductor memory cell in a DRAM
    153.
    发明授权
    Method for fabricating a semiconductor memory cell in a DRAM 失效
    在DRAM中制造半导体存储单元的方法

    公开(公告)号:US5780339A

    公开(公告)日:1998-07-14

    申请号:US850908

    申请日:1997-05-02

    CPC classification number: H01L27/10852

    Abstract: This present invention is a method of fabricating a semiconductor memory cell in a DRAM. This invention utilizes a inter plug technique and nitride sidewall spacers to improve deep node contact etching damage and reduce the number of mask steps for typical landing pad processes. Thus, the method of this invention allows the manufacture of a semiconductor memory cell that reduces the difficulties due to the high aspect ratio of the contact hole of a storage node.

    Abstract translation: 本发明是一种在DRAM中制造半导体存储单元的方法。 本发明利用插塞技术和氮化物侧壁间隔物来改善深层接触蚀刻损伤并减少典型的着陆焊盘工艺的掩模步骤的数量。 因此,本发明的方法允许制造半导体存储单元,其减少由于存储节点的接触孔的高纵横比引起的困难。

    Video door bell
    155.
    外观设计

    公开(公告)号:USD1033256S1

    公开(公告)日:2024-07-02

    申请号:US29871585

    申请日:2023-02-23

    Applicant: Bin Liu

    Designer: Bin Liu

    Abstract: FIG. 1 is a front perspective view of a video door bell, showing my new design;
    FIG. 2 is a rear perspective view thereof;
    FIG. 3 is a front view thereof;
    FIG. 4 is a rear view thereof;
    FIG. 5 is a left side view thereof;
    FIG. 6 is a right side view thereof;
    FIG. 7 is a top view thereof; and,
    FIG. 8 is a bottom view thereof.
    The broken lines in the drawings illustrate the portions of the video door bell, which form no part of the claimed design.

    Lunch bag
    156.
    外观设计

    公开(公告)号:USD978625S1

    公开(公告)日:2023-02-21

    申请号:US29704315

    申请日:2019-09-04

    Applicant: Bin Liu

    Designer: Bin Liu

    Plant stand
    157.
    外观设计

    公开(公告)号:USD966732S1

    公开(公告)日:2022-10-18

    申请号:US29787618

    申请日:2021-06-08

    Applicant: Bin Liu

    Designer: Bin Liu

    Lunch bag
    158.
    外观设计

    公开(公告)号:USD962011S1

    公开(公告)日:2022-08-30

    申请号:US29704425

    申请日:2019-09-04

    Applicant: Bin Liu

    Designer: Bin Liu

    Nanowire structures for solar water splitting

    公开(公告)号:US10304980B2

    公开(公告)日:2019-05-28

    申请号:US14692886

    申请日:2015-04-22

    Abstract: This disclosure provides systems, methods, and apparatus related to solar water splitting. In one aspect, a structure includes a plurality of first nanowires, the plurality of first nanowires comprising an n-type semiconductor or a p-type semiconductor. The structure further includes a second nanowire, the second nanowire comprising the n-type semiconductor or the p-type semiconductor, the second nanowire being a different composition than the plurality of first nanowires. The second nanowire includes a first region and a second region, with the first region having a conductive layer disposed thereon, and each of the plurality of first nanowires being disposed on the conductive layer.

    Multiple Laser Optical Assembly
    160.
    发明申请
    Multiple Laser Optical Assembly 审中-公开
    多激光光学组件

    公开(公告)号:US20160231581A1

    公开(公告)日:2016-08-11

    申请号:US14616882

    申请日:2015-02-09

    Applicant: Bin Liu

    Inventor: Bin Liu

    CPC classification number: G02B27/283

    Abstract: A multiple laser optical assembly comprises two laser subassemblies with two lasers bonded on two bases respectively, a polarization beam combiner (PBC), a lens, a mechanical housing and an optical fiber. The two subassemblies are configured to have orthogonal polarization directions from the two lasers and are assembled coaxially. The PBC combines the orthogonal polarized beams from the two lasers. The lens focuses the combined beam and couples into the optical fiber. With such a two laser optical assembly as a building block and a wavelength division multiplexing (WDM) filter to combine the beams from two of such type of two laser optical assembly, one can further build a four laser optical assembly and extend to even more channel multiple laser optical assembly by adding more WDM filters and more similar two laser optical assemblies.

    Abstract translation: 多激光光学组件包括两个激光子组件,其中两个激光器分别结合在两个基座上,偏振光束组合器(PBC),透镜,机械壳体和光纤。 这两个子组件被构造成具有来自两个激光器的正交偏振方向并被同轴地组装。 PBC组合了来自两个激光器的正交偏振光束。 镜头将组合的光束和光束聚焦到光纤中。 利用这样的两个激光光学组件作为构建块和波分复用(WDM)滤波器来组合来自两个这种类型的两个激光光学组件的光束,可以进一步构建四个激光光学组件并扩展到甚至更多的通道 多个激光光学组件通过添加更多的WDM滤光片和更多类似的两个激光光学组件。

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