VOLTAGE THRESHOLDS IN FLASH DEVICES
    151.
    发明申请

    公开(公告)号:US20210191638A1

    公开(公告)日:2021-06-24

    申请号:US17135747

    申请日:2020-12-28

    Abstract: A method for read voltage levels in flash memory is provided. The method includes determining to which set of pages or blocks of a flash memory device a word line connects, according to a flash memory device architecture. The method includes determining one or more optimum read voltage levels, for one or more pages of the flash memory device that are accessed by activating the word line, according to a specified number of bits per cell and the flash memory device architecture, and using the one or more optimum read voltage levels to access further pages in the set of pages or blocks of the flash memory device to which the word line connect.

    Active membership in a cloud-based storage system

    公开(公告)号:US10917471B1

    公开(公告)日:2021-02-09

    申请号:US16433124

    申请日:2019-06-06

    Abstract: Determining active membership among a set of storage systems, including: determining, by a cloud-based storage system among the set of storage systems, that a membership event corresponds to a change in membership to the set of storage systems synchronously replicating the dataset; applying, in dependence upon the membership event, one or more membership protocols to determine a new set of storage systems to synchronously replicate the dataset; and for one or more I/O operations directed to the dataset, applying the one or more I/O operations to the dataset synchronously replicated by the new set of storage systems.

    Managing connectivity to synchronously replicated storage systems

    公开(公告)号:US10680932B1

    公开(公告)日:2020-06-09

    申请号:US15683823

    申请日:2017-08-23

    Abstract: Managing connectivity to synchronously replicated storage systems, including: identifying a plurality of storage systems across which a dataset is synchronously replicated; identifying a host that can issue I/O operations directed to the dataset; identifying a plurality of data communications paths between the host and the plurality of storage systems across which a dataset is synchronously replicated; identifying, from amongst the plurality of data communications paths between the host and the plurality of storage systems across which a dataset is synchronously replicated, one or more optimal paths; and issuing, to the host, an identification of the one or more optimal paths.

    LOCAL RELOCATION OF DATA STORED AT A STORAGE DEVICE OF A STORAGE SYSTEM

    公开(公告)号:US20200081648A1

    公开(公告)日:2020-03-12

    申请号:US16389675

    申请日:2019-04-19

    Abstract: A storage system includes solid-state storage devices and a storage controller operatively coupled to the solid-state storage devices, the storage controller including a processing device, the processing device to receive, from a solid-state storage device of the solid-state storage devices, an indication of an occurrence of triggering event associated with data stored at a first data block of the solid-state storage device. In response to receiving the indication of the occurrence of the triggering event, a second data block of the solid-state storage device is identified for storage of the data. A command in transmitted to the solid-state storage device that includes address information associated with the second data block of the solid-state storage device for storage of the data, wherein the command causes the solid-state storage device to program the data to the second data block.

    Solid state drives with multiple types of addressable memory

    公开(公告)号:US10552090B2

    公开(公告)日:2020-02-04

    申请号:US15697540

    申请日:2017-09-07

    Abstract: Solid state drives with multiple types of addressable memory, where the solid state drives include: a first memory component comprising a plurality of nonvolatile registers; a second memory component comprising flash memory; and one or more controllers configured to: receive a write operation, wherein the write operation indicates a first portion of data to be written to the flash memory and indicates a second portion of data to be written to one or more of the plurality of registers; and atomically write the first portion of the data to the flash memory and the second portion of the data to the one or more of the plurality of registers.

    Generating and optimizing summary index levels in a deduplication storage system

    公开(公告)号:US10452297B1

    公开(公告)日:2019-10-22

    申请号:US15339684

    申请日:2016-10-31

    Abstract: The method and system generates a first deduplication map (DDM) level including first data and a second DDM level including second data. The method or apparatus also generates a first index summary (IS) level corresponding to the first DDM level and a second IS level corresponding to the second DDM level. The method or apparatus merges the first data of the first DDM level and the second data of the second DDM level to generate a third DDM level comprising third data. The method or apparatus in response to generating the third DDM level, generates a third IS level to accelerate lookup within the third DDM level.

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