公开(公告)号：US5146110A

公开(公告)日：1992-09-08

申请号：US736577

申请日：1991-07-26

Applicant: Tae-Jin Kim ,  Kyu-Chan Lee

Inventor： Tae-Jin Kim ,  Kyu-Chan Lee

IPC: G05F3/20 ,  G11C5/14

CPC classification number: G11C5/146 ,  G05F3/205

Abstract: A semiconductor memory device having a substrate voltage production circuit comprises a time delay circuit. The time delay circuit of the present invention has a simple construction and is provided to facilitate removal of an unwanted substrate current I.sub.SUB existing during a precharge cycle of memory operation. The substrate voltage production circuit requires no additional regulating signals for operation. Latch-up conditions commonly caused by such unwanted substrate currents are eliminated and stable semiconductor memory device operation is achieved.

Abstract translation: 具有基板电压产生电路的半导体存储器件包括时延电路。 本发明的延时电路具有简单的结构，并且提供了便于去除在存储器操作的预充电循环期间存在的不需要的衬底电流ISUB。 基板电压生产电路不需要额外的调节信号进行操作。 通常由这种不需要的衬底电流引起的锁存条件被消除，并且实现了稳定的半导体存储器件操作。