公开(公告)号：US20070211932A1

公开(公告)日：2007-09-13

申请号：US11618360

申请日：2006-12-29

Applicant: Chang-Huhn LEE ,  Seok-Woo HONG

Inventor： Chang-Huhn LEE ,  Seok-Woo HONG

IPC: G06K9/00

CPC classification number: G06T7/0004 ,  G06T2207/30148

Abstract: A semiconductor wafer analysis system is provided. In an embodiment, the semiconductor wafer analysis system includes a tester to test semiconductor wafers manufactured by at least one manufacturing facility, a wafer map generation module to generate wafer maps on the basis of the test results from the tester, and a wafer analysis module. The wafer analysis module may include a data generation module that divides each wafer map into a plurality of defect analysis regions and generates feature vectors representing the semiconductor wafers, and an operation module that statistically analyzes the feature vectors.

Abstract translation: 提供半导体晶片分析系统。 在一个实施例中，半导体晶片分析系统包括测试器，用于测试由至少一个制造设备制造的半导体晶片，晶片图生成模块，以基于来自测试器的测试结果生成晶片图，以及晶片分析模块。 晶片分析模块可以包括将每个晶片图划分成多个缺陷分析区域并产生表示半导体晶片的特征向量的数据生成模块，以及统计分析特征向量的操作模块。

公开(公告)号：US20070178654A1

公开(公告)日：2007-08-02

申请号：US11609857

申请日：2006-12-12

Applicant: Seok-Woo HONG ,  Chang-Huhn LEE ,  Jae-Hun KIM

Inventor： Seok-Woo HONG ,  Chang-Huhn LEE ,  Jae-Hun KIM

IPC: H01L21/336

CPC classification number: H01L28/84 ,  H01L27/10852

Abstract: Disclosed is a metal capacitor including a lower electrode having hemispherical metal grains thereon. The metal capacitor includes a lower metal electrode containing Ti, hemispherical metal grains containing Pd and formed on the lower metal electrode containing Ti, a dielectric layer formed on the lower metal electrode containing Ti and the hemispherical metal grains containing Pd, and an upper metal electrode formed on the dielectric layer.

Abstract translation: 公开了一种金属电容器，其包括其上具有半球形金属颗粒的下电极。 金属电容器包括含有Ti的下部金属电极，形成在含有Ti的下部金属电极上形成的含有Pd的半球形金属颗粒，形成在含有Ti的下部金属电极上的介电层和包含Pd的半球状金属颗粒和上部金属电极 形成在电介质层上。