公开(公告)号：US06344105B1

公开(公告)日：2002-02-05

申请号：US09345639

申请日：1999-06-30

Applicant: John E. Daugherty ,  Neil Benjamin ,  Jeff Bogart ,  Vahid Vahedi ,  David Cooperberg ,  Alan Miller ,  Yoko Yamaguchi

Inventor： John E. Daugherty ,  Neil Benjamin ,  Jeff Bogart ,  Vahid Vahedi ,  David Cooperberg ,  Alan Miller ,  Yoko Yamaguchi

IPC: H01L2100

CPC classification number: H01L21/67069 ,  H01J37/32623 ,  H01J37/32642 ,  H01L21/68721 ,  H01L21/68735 ,  Y10S156/915

Abstract: Improved methods and apparatus for ion-assisted etch processing in a plasma processing system are disclosed. In accordance with various aspects of the invention, an elevated edge ring, a grooved edge ring, and a RF coupled edge ring are disclosed. The invention operates to improve etch rate uniformity across a substrate (wafer). Etch rate uniformity improvement provided by the invention not only improves fabrication yields but also is cost efficient and does not risk particulate and/or heavy metal contamination.

Abstract translation: 公开了用于等离子体处理系统中的离子辅助蚀刻处理的改进方法和装置。 根据本发明的各个方面，公开了一种高边缘环，带槽边缘环和RF耦合边缘环。 本发明用于提高衬底（晶片）上的蚀刻速率均匀性。 本发明提供的蚀刻率均匀性改进不仅提高了制造成本，而且成本有效，并且不会对颗粒和/或重金属污染造成危害。