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公开(公告)号：US20190252159A1
公开(公告)日：2019-08-15
申请号：US16269897
申请日：2019-02-07
发明人： Takehiro UEDA
IPC分类号： H01J37/32 , H01L21/683
CPC分类号： H01J37/32642 , C23C16/458 , C23C16/50 , H01J37/32715 , H01J2237/334 , H01L21/67069 , H01L21/6833
摘要： A mounting apparatus for an object to be processed includes a mounting stage, on which an object to be processed is mounted inside a processing container, an edge ring disposed in a peripheral edge portion of the mounting stage, and a spring-like conductive member that includes a first spring-like member contacting the edge ring at a first recess formed in the edge ring, and a second spring-like member contacting the mounting stage at a second recess formed in the mounting stage.
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公开(公告)号：US20190214269A1
公开(公告)日：2019-07-11
申请号：US16238612
申请日：2019-01-03
发明人： Yasutaka Hama , Shinya Morikita , Kiyohito Ito
IPC分类号： H01L21/311 , H01J37/32 , H01L21/768 , H01L21/67
CPC分类号： H01L21/31144 , H01J37/32541 , H01J37/3255 , H01J37/32568 , H01J37/32642 , H01J37/32715 , H01J2237/002 , H01J2237/3343 , H01L21/31116 , H01L21/67069 , H01L21/76804 , H01L21/76829
摘要： An etching method is provided. The etching method is performed on a substrate having a first film to a third film. The third film is provided on an underlying region, the second film is provided on the third film, the first film is provided on the second film. The second film contains silicon and nitrogen. The first film to the third film are etched in sequence. Plasma of a processing gas containing fluorine and hydrogen is used in the etching of the first film to the third film. A temperature of the substrate is set to be equal to or less than 20° C. at least in the etching of the second film.
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公开(公告)号：US20190198298A1
公开(公告)日：2019-06-27
申请号：US16225326
申请日：2018-12-19
发明人： Jun HIROSE , Takehiro UEDA
IPC分类号： H01J37/32 , H01L21/3065 , H01L21/67 , H01L21/683
CPC分类号： H01J37/32642 , H01J37/32449 , H01J37/32522 , H01J37/32532 , H01J37/32697 , H01L21/3065 , H01L21/67248 , H01L21/6831
摘要： There is provision of a plasma etching apparatus including a processing vessel capable of being evacuated, a lower electrode provided in the processing vessel that is configured to place a substrate, an upper electrode provided in the processing vessel arranged in parallel with the lower electrode so as to face each other, a process gas supply unit configured to supply process gas to a processing space between the upper electrode and the lower electrode, a high frequency power supply unit configured to supply high frequency electric power for generating plasma from process gas, a focus ring surrounding a periphery of the substrate, a direct current (DC) power source configured to output DC voltage applied to the focus ring, a heating unit configured to heat the focus ring, and a temperature measurement unit for measuring temperature of the focus ring.
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公开(公告)号：US20180294137A1
公开(公告)日：2018-10-11
申请号：US16004898
申请日：2018-06-11
发明人： Chishio KOSHIMIZU , Naoki Matsumoto , Satoshi Tanaka , Toru Ito
CPC分类号： H01J37/21 , H01J37/32091 , H01J37/32155 , H01J37/32165 , H01J37/32348 , H01J37/32449 , H01J37/32467 , H01J37/32642 , H01J2237/21 , H01J2237/334
摘要： A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode disposed to face each other, a high frequency power supply unit for applying a high frequency power to either the first electrode or the second electrode, a processing gas supply unit for supplying a processing gas to a processing space, and a main dielectric member provided at a substrate mounting portion on a main surface of the first electrode. A focus ring is attached to the first electrode to cover a peripheral portion of the main surface of the first electrode and a peripheral dielectric member is provided in a peripheral portion on the main surface of the first electrode so that an electrostatic capacitance per unit area applied between the first electrode and the focus ring is smaller than that applied between the first electrode and the substrate by the main dielectric member.
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公开(公告)号：US10020172B2
公开(公告)日：2018-07-10
申请号：US14721090
申请日：2015-05-26
发明人： Mitsunori Ohata , Hidetoshi Kimura , Kiyoshi Maeda , Jun Hirose , Tsuyoshi Hida
IPC分类号： H01J37/32 , H01L21/67 , H01L21/687 , C23C16/52
CPC分类号： H01J37/32642 , C23C16/52 , H01J37/32091 , H01L21/67069 , H01L21/68735
摘要： There is provided a plasma processing apparatus including a susceptor, having a substrate mounting portion for mounting thereon a substrate; a focus ring including an outer ring and an inner ring; a dielectric ring; a dielectric constant varying device for varying a dielectric constant of the dielectric ring; a grounding body positioned at an outside of the dielectric ring with a gap from a bottom surface of the focus ring; and a controller for controlling a top surface electric potential of the focus ring by controlling a current flowing from the susceptor to the substrate.
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公开(公告)号：US09997381B2
公开(公告)日：2018-06-12
申请号：US14175509
申请日：2014-02-07
发明人： Brian McMillin , Arthur Sato , Neil Benjamin
IPC分类号： H01L21/67 , H01J37/32 , H01L21/3065 , H01L21/768
CPC分类号： H01L21/67069 , H01J37/32009 , H01J37/32082 , H01J37/32642 , H01L21/3065 , H01L21/30655 , H01L21/76898
摘要： An edge ring assembly is disclosed for use in a plasma processing chamber, which includes an RF conductive ring positioned on an annular surface of a base plate and configured to surround an upper portion of the baseplate and extend underneath an outer edge of a wafer positioned on the upper surface of the baseplate, and a wafer edge protection ring positioned above an upper surface of the RF conductive ring and configured to extend over the outer edge of the wafer. The protection ring has an inner edge portion with a uniform thickness, which extends over the outer edge of the wafer, a conical upper surface extending outward from the inner edge portion to a horizontal upper surface, an inner annular recess which is positioned on the upper surface of the RF conductive and configured to extend over the outer edge of the wafer.
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7.发明申请公开(公告)号：US20180122680A1
公开(公告)日：2018-05-03
申请号：US15787940
申请日：2017-10-19
发明人： Song-yi YANG
IPC分类号： H01L21/683 , H01L21/67 , H01J37/32
CPC分类号： H01L21/6833 , H01J37/32 , H01J37/32642 , H01J37/32697 , H01J37/32724 , H01J2237/2001 , H01J2237/3344 , H01L21/67069 , H01L21/67109 , H01L21/67248 , H01L21/67288
摘要： An electrostatic chuck assembly includes an electrostatic chuck including a circular-shaped electrostatic dielectric layer on which a wafer is mounted and an adsorption electrode in the electrostatic dielectric layer, and a control part configured to control the electrostatic chuck, wherein the adsorption electrode comprises a plurality of sub-adsorption electrodes separated from each other in an X direction and a Y direction perpendicular to the X direction on a plane level from a central portion of the electrostatic dielectric layer.
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8.发明申请公开(公告)号：US20180082822A1
公开(公告)日：2018-03-22
申请号：US15825021
申请日：2017-11-28
发明人： Michael C. Kellogg , Alexei Marakhtanov , John Patrick Holland , Zhigang Chen , Felix Kozakevich , Kenneth Lucchesi
IPC分类号： H01J37/32 , H01J37/147
CPC分类号： H01J37/32155 , H01J37/1471 , H01J37/32091 , H01J37/32366 , H01J37/32642
摘要： Systems and methods for controlling directionality of ion flux at an edge region within a plasma chamber are described. One of the systems includes a radio frequency (RF) generator that is configured to generate an RF signal, an impedance matching circuit coupled to the RF generator for receiving the RF signal to generate a modified RF signal, and a plasma chamber. The plasma chamber includes an edge ring and a coupling ring located below the edge ring and coupled to the first impedance matching circuit to receive the modified RF signal. The coupling ring includes an electrode that generates a capacitance between the electrode and the edge ring to control the directionality of the ion flux upon receiving the modified RF signal.
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公开(公告)号：US20180040458A1
公开(公告)日：2018-02-08
申请号：US15788166
申请日：2017-10-19
申请人： Semes Co., Ltd
发明人： Hyungchul MOON , Hyung Joon KIM
IPC分类号： H01J37/32
CPC分类号： H01J37/3244 , H01J37/32009 , H01J37/32449 , H01J37/32477 , H01J37/32642 , H01J37/32715 , H01J37/32862 , H01J37/32871 , H01L21/3065 , H01L21/32136 , H01L21/67069
摘要： Substrate treating systems are disclosed. The system may include a chamber with a processing space, a supporting unit provided in the processing space to support a substrate, a gas supplying unit provided in the processing space to supply gas into the processing space, a plasma source unit generating plasma from the gas, and a liner unit disposed to enclose the supporting unit. The supporting unit may include a supporting plate supporting a substrate. The liner unit may include an inner liner enclosing the supporting plate and an actuator vertically moving the inner liner.
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公开(公告)号：US09812297B2
公开(公告)日：2017-11-07
申请号：US14159535
申请日：2014-01-21
发明人： Keita Kanbara , Naoyuki Satoh , Takuya Ishikawa
IPC分类号： H01J37/32
CPC分类号： H01J37/32642
摘要： A heat transfer sheet affixing method where a focus ring is pressed by a pressing part to a heat transfer sheet placed on a heat transfer sheet mounting part of a plasma processing apparatus to affix the heat transfer sheet to the focus ring. The method includes reducing a pressure to place the heat transfer sheet in a reduced-pressure atmosphere, heating the heat transfer sheet, and pressing the focus ring by the pressing part to the heat transfer sheet. The reducing, the heating, and the pressing are performed concurrently at least for a predetermined period of time.
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