公开(公告)号：US5037622A

公开(公告)日：1991-08-06

申请号：US553903

申请日：1990-07-13

申请人： David S. Harvey ,  Dana L. Winchester ,  Brian H. Mackintosh ,  Sankerlingam Rajendran

发明人： David S. Harvey ,  Dana L. Winchester ,  Brian H. Mackintosh ,  Sankerlingam Rajendran

IPC分类号： C30B15/34 ,  H01L21/208

CPC分类号： C30B15/34 ,  Y10T117/104 ,  Y10T117/1052

摘要： A novel capillary die and crystal growing method are provided for growing a hollow crystalline body by EFG. Inner and outer annular moats surround the die tip. Passageways are provided for supplying melt to those moats from a crucible, so that melt in said moats will wet and cover the inner and outer exterior surfaces of the die tip during growth of a hollow crystalline body. The novel die may be constructed so as to have a lower die tip and a shorter capillary than EFG dies heretofore used to successfully grow hollow bodies. The die design facilitates keeping the temperature of the die tip substantially uniform about its circumference, thereby improving the uniformity of thickness of the wall of the crystalline body grown from a film of melt on the die tip. The moats reduce the likelihood of the growth process being interrupted or adversely affected by flooding of the die. In the event the growth meniscus breaks, liquid silicon is captured in the moats, thereby preventing or reducing the likelihood of flooding of the die and associated growth apparatus.

摘要翻译： 提供了一种新颖的毛细管模头和晶体生长方法，用于通过EFG生长中空晶体。 内外环形护城河环绕模头。 通道设置用于从坩埚向这些护城河供应熔体，使得在中空结晶体的生长期间，所述护城河中的熔体将湿润并覆盖模头顶部的内外表面。 新颖的模具可以构造成具有比迄今为止用于成功生长中空体的EFG模具更低的模头和更短的毛细管。 模具设计有利于保持模头尖端的温度在其周边上基本均匀，从而提高从模头上的熔体膜生长的结晶体的壁厚度的均匀性。 护城河减少了生长过程被模具淹水中断或不利影响的可能性。 在生长半月板破裂的情况下，液态硅被捕获在护城河中，从而防止或降低了模具和相关生长装置的淹水的可能性。

公开(公告)号：US4937053A

公开(公告)日：1990-06-26

申请号：US257766

申请日：1988-09-30

申请人： David S. Harvey

发明人： David S. Harvey

IPC分类号： C30B15/00 ,  C30B15/34

CPC分类号： C30B15/34 ,  C30B15/00 ,  C30B29/66 ,  Y10T117/104 ,  Y10T117/1068

摘要： An apparatus and process are disclosed for growing tubular crystalline bodies according to the Edge defined, Film-Fed Growth (EPG) process, wherein the apparatus has at least one exterior passage (240) and at least oen interior passage (245) formed in its crucible die assembly (200) and associated parts, whereby gases introduced into at least one exterior passage (725) will be delivered to the zone located outside the growing crystalline body (900) (i.e. the "exterior" zone ) adjacent to the growth face on the die member (215), and gases introduced into at least one interior passage (720) will be delivered to the zone located inside of the hollow crystalline body (i.e. the "interior" zone) adjacent to the growth face on the die member, whereby the atmosphere in each of the zones may be separately controlled.

摘要翻译： 公开了根据边缘限定的成膜（EPG）方法生长管状晶体的装置和方法，其中该装置具有至少一个外部通道（240）和至少一个形成在其中的内部通道（245） 坩埚模具组件（200）和相关部件，由此引入至少一个外部通道（725）的气体将被输送到位于生长结晶体（900）外的区域（即，“外部”区域）附近的生长面 在模具构件（215）上，并且引入至少一个内部通道（720）的气体将被递送到位于与模具构件上的生长面相邻的中空结晶体（即，“内部”区域）内部的区域 ，由此可以单独地控制每个区域中的气氛。