公开(公告)号：US20180057957A1

公开(公告)日：2018-03-01

申请号：US15797833

申请日：2017-10-30

申请人： GTAT Corporation

发明人： David Frances Broyer ,  Hui Zhang ,  Ning Duanmu ,  Ian T. Witting

IPC分类号： C30B11/00 ,  C30B35/00 ,  C30B29/20 ,  C30B15/14

CPC分类号： C30B11/002 ,  C30B11/003 ,  C30B15/14 ,  C30B29/20 ,  C30B35/00 ,  Y10T117/1068 ,  Y10T117/1092

摘要： An advanced crucible support system is described that allows for greater heat flow to and from the bottom of a crucible, preferably while also preventing excessive heat from reaching a heat exchanger. In particular, a support base is described that includes a plurality of spaced crown features disposed on the support base plate. The crown features receive and vertically support the crucible and are spaced to support the crucible and to allow heat flow between the plurality of crown features. In doing so, a top surface of spaced crown features are in direct contact with the crucible.

公开(公告)号：US09732441B2

公开(公告)日：2017-08-15

申请号：US14125625

申请日：2012-06-15

申请人： Kazuhiko Kusunoki ,  Kazuhito Kamei ,  Nobuyoshi Yashiro ,  Nobuhiro Okada ,  Hironori Daikoku ,  Motohisa Kado ,  Hidemitsu Sakamoto

发明人： Kazuhiko Kusunoki ,  Kazuhito Kamei ,  Nobuyoshi Yashiro ,  Nobuhiro Okada ,  Hironori Daikoku ,  Motohisa Kado ,  Hidemitsu Sakamoto

IPC分类号： C30B9/00 ,  C30B35/00 ,  C30B9/10 ,  C30B29/36 ,  C30B15/32 ,  C30B17/00 ,  C30B11/00 ,  C30B19/06 ,  C30B19/08

CPC分类号： C30B35/00 ,  C30B9/10 ,  C30B11/003 ,  C30B15/32 ,  C30B17/00 ,  C30B19/068 ,  C30B19/08 ,  C30B29/36 ,  Y10T117/1068 ,  Y10T117/1092

摘要： An apparatus for producing an SiC single crystal includes a crucible for accommodating an Si—C solution and a seed shaft having a lower end surface where an SiC seed crystal (36) would be attached. The seed shaft includes an inner pipe that extends in a height direction of the crucible and has a first passage. An outer pipe accommodates the inner pipe and constitutes a second passage between itself and the inner pipe and has a bottom portion whose lower end surface covers a lower end opening of the outer pipe. One passage of the first and second passages serves as an introduction passage where coolant gas flows downward, and the other passage serves as a discharge passage where coolant gas flows upward. A region inside the pipe that constitutes the introduction passage is to be overlapped by a region of not less than 60% of the SiC seed crystal.

公开(公告)号：US09617655B2

公开(公告)日：2017-04-11

申请号：US13997722

申请日：2011-12-26

申请人： Nobuhiro Okada ,  Kazuhito Kamei ,  Kazuhiko Kusunoki ,  Nobuyoshi Yashiro ,  Kouji Moriguchi ,  Hironori Daikoku ,  Hiroshi Suzuki ,  Tomokazu Ishii ,  Hidemitsu Sakamoto ,  Motohisa Kado ,  Yoichiro Kawai

发明人： Nobuhiro Okada ,  Kazuhito Kamei ,  Kazuhiko Kusunoki ,  Nobuyoshi Yashiro ,  Kouji Moriguchi ,  Hironori Daikoku ,  Hiroshi Suzuki ,  Tomokazu Ishii ,  Hidemitsu Sakamoto ,  Motohisa Kado ,  Yoichiro Kawai

IPC分类号： C30B15/20 ,  C30B29/36 ,  C30B15/14 ,  C30B17/00 ,  C30B15/30

CPC分类号： C30B15/20 ,  C30B15/14 ,  C30B15/30 ,  C30B15/305 ,  C30B17/00 ,  C30B29/36 ,  Y10T117/1068

摘要： An apparatus for SIC single crystal has an induction heating control unit such that frequency f (Hz) of alternating current to the induction heating unit satisfies Formula (1); D1 (mm) is permeation depth of electromagnetic waves into a crucible side wall by the heating unit, D2 (mm) is permeation depth of electromagnetic waves into a SIC solution, T (mm) is thickness of the crucible side wall of the crucible, and R (mm) is crucible inner radius: (D1−T)×D2/R>1.5  (1) where, D1 is defined by Formula (2) and D2 by Formula (3): D1=503292×(1/(f×σc×μc))1/2  (2) D2=503292×(1/(f×σs×μs))1/2  (3); σc is electric conductivity (S/m) of the sidewall, σs is electric conductivity (S/m) of the SiC solution; μc is relative permeability of the sidewall, and μs is relative permeability of the SIC solution.

公开(公告)号：US09249525B2

公开(公告)日：2016-02-02

申请号：US13545097

申请日：2012-07-10

申请人： Dieter Knerer ,  Werner Schachinger

发明人： Dieter Knerer ,  Werner Schachinger

IPC分类号： C30B15/16 ,  C30B15/14 ,  C30B30/04 ,  C30B35/00 ,  H05B3/40

CPC分类号： C30B15/14 ,  C30B30/04 ,  C30B35/00 ,  H05B3/40 ,  Y10T117/1068

摘要： A ring-shaped resistance heater for supplying heat to a growing single crystal, contains an upper and a lower ring, which are electrically conductively connected by means of a loop adjacent to a ring gap of one ring, such that the flow direction of electric current which is conducted through the rings is opposite in the rings; connecting elements which hold the upper and lower rings together in a spaced apart relationship; and current leads for conducting electric current through the upper and lower rings.

摘要翻译： 用于向增长的单晶供给热量的环形电阻加热器包含上环和下环，其通过邻近一个环的环间隙的环路导电连接，使得电流的流动方向 通过环进行的环在环中相反; 连接元件，其以间隔的关系将上下环固定在一起; 以及用于通过上下环导通电流的电流引线。

公开(公告)号：US09217208B2

公开(公告)日：2015-12-22

申请号：US12744606

申请日：2008-12-18

申请人： Ryoji Hoshi ,  Kiyotaka Takano

发明人： Ryoji Hoshi ,  Kiyotaka Takano

IPC分类号： C30B15/20 ,  C30B29/06 ,  C30B35/00 ,  C30B15/14

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/20 ,  C30B35/00 ,  Y10T117/1068

摘要： The present invention is an apparatus for producing a single crystal, growing the single crystal by the Czochralski method and comprising at least: a main chamber in which a crucible for accommodating a raw material melt and a heater for heating the raw material melt are arranged; a pulling chamber into which the grown single crystal is pulled and accommodated, the pulling chamber being continuously provided above the main chamber; and a cooling cylinder extending at least from a ceiling of the main chamber toward a surface of the raw material melt so as to surround the single crystal during pulling, the cooling cylinder being forcibly cooled with a cooling medium. As a result, there is provided an apparatus for producing a single crystal that can increase the growth rate of the single crystal by efficiently cooling the single crystal during the growth.

摘要翻译： 本发明是一种用于制造单晶的装置，其通过切克劳斯基法（Czochralski method）生长单晶，并且至少包括：主室，其中容纳原料熔体的坩埚和用于加热原料熔体的加热器; 其中拉出和容纳生长的单晶的拉动室，拉动室连续地设置在主室上方; 以及至少从主室的天花板朝向原料熔融物的表面延伸以在拉伸期间包围单晶的冷却缸，冷却缸被冷却介质强制冷却。 结果，提供了一种用于生产单晶的装置，其可以通过在生长期间有效地冷却单晶来增加单晶的生长速率。

公开(公告)号：US20150176150A1

公开(公告)日：2015-06-25

申请号：US14541755

申请日：2014-11-14

申请人： GT Crystal Systems, LLC

发明人： David F. Broyer ,  Hui Zhang ,  Ning Duanmu ,  Ian T. Witting

IPC分类号： C30B11/00 ,  C30B29/20

CPC分类号： C30B11/002 ,  C30B11/003 ,  C30B15/14 ,  C30B29/20 ,  C30B35/00 ,  Y10T117/1068 ,  Y10T117/1092

摘要： According to the disclosed embodiments, an advanced crucible support system is described that allows for greater heat flow to and from the bottom of a crucible, preferably while also preventing excessive heat from reaching a heat exchanger. In particular, a support base is described that includes one or more vents enabling improved heat flow throughout the system. Also, according to one or more additional embodiments, the functionality of the crucible support is adapted to be leveraged by a crucible manipulating device. For example, the support plate may have a plurality of slots for insertion of a “lifting arm”, such that the entire support plate assembly, as well as the crucible itself while on the support assembly, may be lifted and transported as a single unit.

摘要翻译： 根据所公开的实施例，描述了一种先进的坩埚支撑系统，其允许进入和离开坩埚的底部的更大的热流，优选地同时也防止过热到达热交换器。 特别地，描述了包括一个或多个通气口的支撑基座，其能够改善整个系统的热流。 此外，根据一个或多个另外的实施例，坩埚支撑件的功能性适于由坩埚操纵装置利用。 例如，支撑板可以具有用于插入“提升臂”的多个狭槽，使得整个支撑板组件以及坩埚本身在支撑组件上可以作为单个单元被提升和运输 。

公开(公告)号：US08968470B2

公开(公告)日：2015-03-03

申请号：US12568436

申请日：2009-09-28

申请人： Bo Yun Jang ,  Young Soo Ahn ,  Joon Soo Kim ,  Sang Hyun Park ,  Dong Kook Kim ,  Gwon Jong Yu

发明人： Bo Yun Jang ,  Young Soo Ahn ,  Joon Soo Kim ,  Sang Hyun Park ,  Dong Kook Kim ,  Gwon Jong Yu

IPC分类号： C30B35/00 ,  C30B13/14

CPC分类号： C30B13/14 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1068

摘要： Disclosed herein are a graphite crucible for electromagnetic induction-based silicon melting and an apparatus for silicon melting/refining using the same, which performs a melting operation by a combination of indirect melting and direct melting. The crucible is formed of a graphite material and includes a cylindrical body having an open upper part through which a silicon raw material is charged into the crucible, and an outer wall surrounded by an induction coil, wherein a plurality of slits are vertically formed through the outer wall and an inner wall of the crucible such that an electromagnetic force created by an electric current flowing in the induction coil acts toward an inner center of the crucible to prevent a silicon melt from contacting the inner wall of the crucible.

摘要翻译： 本文公开了一种用于基于电磁感应的硅熔化的石墨坩埚和使用该方法的硅熔化/精炼装置，其通过间接熔化和直接熔融的组合进行熔融操作。 坩埚由石墨材料形成，并且包括具有开放的上部的圆柱体，硅原料通过该上部装载到坩埚中，以及由感应线圈包围的外壁，其中多个狭缝通过 外壁和坩埚的内壁，使得由在感应线圈中流动的电流产生的电磁力作用于坩埚的内部中心，以防止硅熔体与坩埚的内壁接触。

公开(公告)号：US08920561B2

公开(公告)日：2014-12-30

申请号：US13056017

申请日：2009-07-28

申请人： Yasuhito Narushima ,  Shinichi Kawazoe ,  Fukuo Ogawa ,  Toshimichi Kubota ,  Tomohiro Fukuda

发明人： Yasuhito Narushima ,  Shinichi Kawazoe ,  Fukuo Ogawa ,  Toshimichi Kubota ,  Tomohiro Fukuda

IPC分类号： C30B15/04

CPC分类号： C30B15/04 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1056 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： A silicon single crystal pull-up apparatus includes a pull-up furnace, a sample chamber in which a sublimable dopant is housed, a sample tube which can be raised and lowered between the interior of the sample chamber and the interior of the pull-up furnace, a raising and lowering means for raising and lowering the sample tube, a supply pipe which is installed inside the pull-up furnace and supplies the sublimable dopant to a melt, and a connection means for connecting the sample tube and the supply pipe. The connection means is constructed from a ball joint structure comprising a convex member which projects from one end of the sample tube and a concave member which is provided at one end of the supply pipe and is formed to be engageable with the convex member. The contact surfaces of the convex member and the concave member are formed to be curved surfaces.

摘要翻译： 硅单晶上拉装置包括上拉炉，容纳可升华掺杂剂的样品室，可在样品室内部和上拉内部之间升高和降低的样品管 炉，用于升高和降低样品管的升降装置，安装在上拉炉内部并将升华性掺杂剂供应给熔体的供应管，以及用于连接样品管和供给管的连接装置。 连接装置由包括从样品管的一端突出的凸起构件和设置在供给管的一端形成为可与凸部构件接合的凹部构件的球接头结构构成。 凸部件和凹部件的接触表面形成为弯曲表面。

公开(公告)号：US08821636B2

公开(公告)日：2014-09-02

申请号：US12936450

申请日：2009-04-24

申请人： Takao Abe ,  Kouzou Yokota ,  Kouji Mizuishi

发明人： Takao Abe ,  Kouzou Yokota ,  Kouji Mizuishi

IPC分类号： C30B15/02 ,  C30B15/14 ,  C30B29/06 ,  C30B15/00 ,  C30B35/00

CPC分类号： C30B15/14 ,  C30B15/00 ,  C30B29/06 ,  C30B35/00 ,  Y10T117/1032 ,  Y10T117/1056 ,  Y10T117/1068

摘要： The present invention is a single-crystal manufacturing apparatus based on the Czochralski method having a main chamber configured to accommodate hot zone components including a crucible, and a pull chamber configured to accommodate and take out a single crystal pulled from a raw material melt, the apparatus further comprising a multipurpose chamber interchangeable with the pull chamber, wherein a heating means for heating a raw material charged into the crucible and a cooling means for cooling the hot zone components after pulling the single crystal are placeable in the multipurpose chamber respectively. As a result, there is provided a single-crystal manufacturing apparatus that enables, in manufacture of a single crystal of a large diameter, e.g., approximately 200 mm or more, an operating rate of the single-crystal manufacturing apparatus and productivity of the single crystal to be improved.

摘要翻译： 本发明是一种基于切克劳斯基法的单晶制造装置，其具有构造成容纳包括坩埚的热区部件的主室和被配置为容纳和取出从原料熔体拉出的单晶的拉腔， 该设备还包括与拉动室可互换的多用途室，其中用于加热装入坩埚的原料的加热装置和用于在拉出单晶之后冷却热区部件的冷却装置分别放置在多用途室中。 结果，提供了一种单晶制造装置，其能够在大直径的单晶例如约200mm以上的制造中，单晶制造装置的工作速率和单晶制造装置的生产率 水晶要改善。

公开(公告)号：US20140116324A1

公开(公告)日：2014-05-01

申请号：US14125625

申请日：2012-06-15

申请人： Kazuhiko Kusunoki ,  Kazuhito Kamei ,  Nobuyoshi Yashiro ,  Nobuhiro Okada ,  Hironori Daikoku ,  Motohisa Kado ,  Hidemitsu Sakamoto

发明人： Kazuhiko Kusunoki ,  Kazuhito Kamei ,  Nobuyoshi Yashiro ,  Nobuhiro Okada ,  Hironori Daikoku ,  Motohisa Kado ,  Hidemitsu Sakamoto

IPC分类号： C30B35/00 ,  C30B11/00 ,  C30B15/32

CPC分类号： C30B35/00 ,  C30B9/10 ,  C30B11/003 ,  C30B15/32 ,  C30B17/00 ,  C30B19/068 ,  C30B19/08 ,  C30B29/36 ,  Y10T117/1068 ,  Y10T117/1092

摘要： An apparatus for producing an SiC single crystal includes a crucible for accommodating an Si—C solution and a seed shaft having a lower end surface where an SiC seed crystal (36) would be attached. The seed shaft includes an inner pipe that extends in a height direction of the crucible and has a first passage. An outer pipe accommodates the inner pipe and constitutes a second passage between itself and the inner pipe and has a bottom portion whose lower end surface covers a lower end opening of the outer pipe. One passage of the first and second passages serves as an introduction passage where coolant gas flows downward, and the other passage serves as a discharge passage where coolant gas flows upward. A region inside the pipe that constitutes the introduction passage is to be overlapped by a region of not less than 60% of the SiC seed crystal.

摘要翻译： 一种用于制造SiC单晶的装置包括用于容纳Si-C溶液的坩埚和具有附接有SiC晶种（36）的下端面的种子轴。 种子轴包括在坩埚的高度方向上延伸并具有第一通道的内管。 外管容纳内管，构成内管之间的第二通道，下端面覆盖外管下端开口的底部。 第一通道和第二通道的一个通道用作冷却剂气体向下流动的引入通道，另一个通道用作冷却剂气体向上流动的排出通道。 构成引入通道的管内的区域与SiC晶种不小于60％的区域重叠。