公开(公告)号：US09863063B2

公开(公告)日：2018-01-09

申请号：US14107743

申请日：2013-12-16

申请人： SunEdison, Inc.

发明人： Tirumani N. Swaminathan

IPC分类号： C30B15/12 ,  C30B15/00 ,  C30B11/00

CPC分类号： C30B15/12 ,  C30B11/002 ,  C30B15/002 ,  Y10T117/1052

摘要： A system for growing a crystal ingot includes a crucible and a weir. The crucible has a base and a sidewall for the containment of a silicon melt therein. The weir is located along the base of the crucible inward from the sidewall of the crucible. The weir has a body connected with at least a pair of legs disposed to inhibit movement of the silicon melt therebetween.

公开(公告)号：US09376762B2

公开(公告)日：2016-06-28

申请号：US13689189

申请日：2012-11-29

申请人： Solaicx, Inc.

发明人： Tirumani N. Swaminathan

IPC分类号： C30B15/12 ,  C30B15/00 ,  C30B29/06

CPC分类号： C30B15/12 ,  C30B15/002 ,  C30B29/06 ,  Y10T117/1052

摘要： An apparatus for growing ingots by the Czochralski method includes a growth chamber defining an enclosure configured to circulate a purge gas about the growing ingot and a crucible provided in the growth chamber configured to hold the molten silicon. A weir is supported in the crucible and is configured to separate the molten silicon into an inner growth region surrounding the melt/crystal interface from an outer region configured to receive the crystalline feedstock. The weir comprises at least one sidewall extending vertically and a cap extending substantially perpendicularly to the sidewall.

摘要翻译： 用于通过切克劳斯基法（Czochralski）方法生长铸锭的装置包括：生长室，其限定被配置成围绕生长锭循环净化气体的壳体;以及设置在生长室中的坩埚，其配置成保持熔融硅。 堰被支撑在坩埚中，并且被构造成将熔融硅分离成熔融/晶体界面周围的内部生长区域与构造成接收结晶原料的外部区域分离。 堰包括至少一个垂直延伸的侧壁和大致垂直于侧壁延伸的盖。

公开(公告)号：US20160024684A1

公开(公告)日：2016-01-28

申请号：US14341584

申请日：2014-07-25

申请人： SunEdison, Inc.

发明人： Tirumani Swaminathan

IPC分类号： C30B15/12

CPC分类号： C30B15/12 ,  C30B15/02 ,  C30B29/06 ,  Y10T117/1052 ,  Y10T117/1064

摘要： A system for growing a crystal ingot from a melt is provided. The system includes a first crucible, a barrier, and a shield. The first crucible has a first base and a first sidewall forming a first cavity for containing the melt. The barrier is disposed within the first cavity of the first crucible to inhibit movement of the melt from outward of the barrier to inward of the barrier. The barrier extends from the first base to above the melt. The barrier has an inner arm and an outer arm extending upward to form a channel therebetween. The shield extends downward between the inner arm and the outer arm to inhibit passage of contaminants.

摘要翻译： 提供了用于从熔体生长晶锭的系统。 该系统包括第一坩埚，屏障和屏蔽。 第一坩埚具有形成用于容纳熔体的第一腔的第一基底和第一侧壁。 屏障设置在第一坩埚的第一腔内，以阻止熔体从屏障的外部移动到屏障的内侧。 阻挡层从第一基底延伸到熔体之上。 屏障具有向上延伸的内臂和外臂，以在它们之间形成通道。 护罩在内臂和外臂之间向下延伸以阻止污染物通过。

公开(公告)号：US20150259823A1

公开(公告)日：2015-09-17

申请号：US14257202

申请日：2014-04-21

申请人： Hyun Goo Kwon ,  Yeo Kyun Yoon ,  Min Soo Son

发明人： Hyun Goo Kwon ,  Yeo Kyun Yoon ,  Min Soo Son

IPC分类号： C30B15/00 ,  C30B15/10 ,  C30B15/14 ,  C30B15/12

CPC分类号： C30B15/002 ,  C30B15/12 ,  C30B15/14 ,  C30B29/06 ,  Y10T117/1052

摘要： Disclosed is an ingot manufacturing apparatus that includes: an inner wall which has a growth zone where an ingot IG grows from molten silicon; a crucible which surrounds the inner wall; and a heat reflector which is formed convexly toward an interface between a surface of the molten silicon of the growth zone and the inner wall.

摘要翻译： 公开了一种锭制造装置，其包括：内壁，其具有铸锭IG从熔融硅生长的生长区; 围绕内壁的坩埚; 以及朝向生长区的熔融硅的表面与内壁之间的界面凸形形成的热反射体。

公开(公告)号：US20150211147A1

公开(公告)日：2015-07-30

申请号：US14417529

申请日：2013-07-26

申请人： KYOCERA Corporation

发明人： Katsuaki Masaki ,  Yutaka Kuba ,  Chiaki Domoto

IPC分类号： C30B15/10 ,  C30B29/36

CPC分类号： C30B15/10 ,  C30B29/36 ,  Y10T117/1052

摘要： A crucible 1 according to an embodiment of the present invention is a crucible 1 which is used in a solution growth method for growing a crystal of silicon carbide on a lower surface 3B of a seed crystal 3 from a solution 2, by accommodating the solution 2 of silicon containing carbon in the crucible 1, by allowing the lower surface 3B of the seed crystal 3 to contact with the solution 2 from above, and by pulling the seed crystal 3 upward. The crucible is made of carbon and includes a solution adjustment member 4 which is fixed to an inner wall surface 1A so as to be positioned between a bottom surface 1B and a liquid surface of the solution 2 when the crucible 1 is used and which includes a through hole 4a overlapped with an inner side of the seed crystal 3 disposed above.

摘要翻译： 根据本发明实施例的坩埚1是一种坩埚1，其用于溶液生长方法，用于通过容纳溶液2来从溶液2生长晶种3的下表面3B上的碳化硅晶体 通过使晶种3的下表面3B从上方与溶液2接触，并且通过向上拉籽晶3，在坩埚1中含硅的碳。 坩埚由碳制成，并且包括溶液调节构件4，该溶液调节构件4在使用坩埚1时固定到内壁表面1A以便定位在底表面1B和溶液2的液体表面之间，并且包括 通孔4a与设置在上方的晶种3的内侧重叠。

公开(公告)号：US08940095B2

公开(公告)日：2015-01-27

申请号：US13289273

申请日：2011-11-04

申请人： Partha Dutta

发明人： Partha Dutta

IPC分类号： C30B9/06 ,  C30B11/06 ,  C30B29/40 ,  C30B29/48 ,  C30B35/00

CPC分类号： C30B11/06 ,  C30B29/40 ,  C30B29/403 ,  C30B29/48 ,  C30B35/00 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1028 ,  Y10T117/1052 ,  Y10T117/1092 ,  Y10T428/2982

摘要： An apparatus for growth of uniform multi-component single crystals is provided. The single crystal material has at least three elements and has a diameter of at least 50 mm, a dislocation density of less than 100 cm−2 and a radial compositional variation of less than 1%.

摘要翻译： 提供均匀的多组分单晶的生长装置。 单晶材料具有至少三个元素，并且具有至少50mm的直径，小于100cm -2的位错密度和小于1％的径向组成变化。

公开(公告)号：US08888915B2

公开(公告)日：2014-11-18

申请号：US12325019

申请日：2008-11-28

申请人： Tadahiro Sato

发明人： Tadahiro Sato

IPC分类号： C30B35/00 ,  C03B19/09 ,  C30B15/10 ,  C30B29/06

CPC分类号： C03B19/095 ,  C30B15/10 ,  C30B29/06 ,  C30B35/002 ,  Y02P40/57 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1052

摘要： A high-purity vitreous silica crucible which has high strength and is used for pulling a large-diameter single-crystal silicon ingot, includes a double laminated structure constituted by an outer layer composed of amorphous silica glass with a bubble content of 1 to 10% and a purity of 99.99% or higher and an inner layer composed of amorphous silica glass with a bubble content of 0.6% or less and a purity of 99.99% or higher, and in the portion between the upper opening end of the high-purity vitreous silica crucible and the ingot-pulling start line of a silicon melt surface in the step of pulling a single-crystal silicon ingot, a portion corresponding to 40 to 100 volume % from the upper opening end of the crucible is in a crystalline structure free from the crystallization promoter.

摘要翻译： 具有高强度并用于拉伸大直径单晶硅锭的高纯度二氧化硅玻璃坩埚包括由气泡含量为1至10％的无定形二氧化硅玻璃构成的外层构成的双层压结构， 纯度为99.99％以上，由无机石英玻璃构成的气泡含量为0.6％以下，纯度为99.99％以上的内层，高纯度玻璃体的上部开口端部分 在拉制单晶硅锭的步骤中，硅熔体表面的引锭起始线与坩埚的上部开口端相当的部分为40〜100体积％，为晶体结构， 结晶促进剂。

公开(公告)号：US08840721B2

公开(公告)日：2014-09-23

申请号：US12944141

申请日：2010-11-11

申请人： Yasuhito Narushima ,  Fukuo Ogawa ,  Toshimichi Kubota

发明人： Yasuhito Narushima ,  Fukuo Ogawa ,  Toshimichi Kubota

IPC分类号： C30B15/02 ,  C30B15/04 ,  C30B29/06 ,  C30B15/20

CPC分类号： C30B15/04 ,  C30B15/20 ,  C30B29/06 ,  Y10T117/1052

摘要： The present invention provides a method of producing low-resistivity silicon single crystal containing a dopant at a relatively high concentration by adding a large amount of the dopant to silicon melt when the silicon single crystal is pulled up, with suppressing occurrence of dislocation in the crystal. Specifically, the present invention provides a method of manufacturing silicon single crystal by bringing silicon seed crystal into contact with silicon melt and pulling up the silicon seed crystal while rotating the crystal to grow silicon single crystal whose straight body section has a diameter of φ mm below the silicon seed crystal, the method comprising: the dopant-adding step of adding a dopant to the silicon melt during growth of the straight body section of the silicon single crystal, while rotating the silicon single crystal at a rotational speed of ω rpm (where ω≧24−(φ/25)).

摘要翻译： 本发明提供了一种通过在硅单晶被拉起时向硅熔体中添加大量掺杂剂而在较高浓度下生产含有掺杂剂的低电阻率硅单晶的方法，同时抑制晶体中位错的发生 。 具体地，本发明提供一种通过使硅晶种与硅熔体接触并提取硅晶种同时旋转晶体来生长直体部分具有直径为＆phgr的硅单晶的方法， 该方法包括：掺杂剂添加步骤，在硅单晶的直体部分的生长过程中向硅熔体中添加掺杂剂，同时以ωrpm的转速旋转硅单晶 （其中ω≥24-（＆phgr / 25））。

公开(公告)号：US08801853B2

公开(公告)日：2014-08-12

申请号：US11488382

申请日：2006-07-17

申请人： Keiichi Takanashi

发明人： Keiichi Takanashi

IPC分类号： C30B15/02

CPC分类号： C30B15/26 ,  C30B15/30 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1052 ,  Y10T117/1056

摘要： This mechanism for controlling a melt level includes: an optical recording device by which a real image of a furnace internal structural object and a reflected image reflected on the melt surface; and a processing device which, taking a value based on the real image as a reference value, controls the position of the melt surface based on a relationship of a position or a size of the reflected image, a distance between the reflected image and the real image, or amounts of changes thereof to the position of the melt surface. This mechanism for adjusting a melt level includes: the above mechanism for controlling a melt level; and a lifting mechanism which is controlled by the mechanism for controlling a melt level and adjusts the melt surface to the set position.

摘要翻译： 用于控制熔融水平的机构包括：光学记录装置，通过该光学记录装置，炉内部结构物体的真实图像和在熔体表面上反射的反射图像; 以及基于真实图像的值作为参考值的处理装置，基于反射图像的位置或尺寸的关系，反射图像与真实的距离之间的距离来控制熔体表面的位置 图像或其对熔体表面的位置的变化量。 用于调节熔融水平的机构包括：用于控制熔体水平的上述机构; 以及由用于控制熔体水平并将熔体表面调节到设定位置的机构控制的提升机构。

公开(公告)号：US20140174337A1

公开(公告)日：2014-06-26

申请号：US14107743

申请日：2013-12-16

申请人： SunEdison, Inc.

发明人： Tirumani N. Swaminathan

IPC分类号： C30B15/12 ,  C30B15/00

CPC分类号： C30B15/12 ,  C30B11/002 ,  C30B15/002 ,  Y10T117/1052

摘要： A system for growing a crystal ingot includes a crucible and a weir. The crucible has a base and a sidewall for the containment of a silicon melt therein. The weir is located along the base of the crucible inward from the sidewall of the crucible. The weir has a body connected with at least a pair of legs disposed to inhibit movement of the silicon melt therebetween.

摘要翻译： 用于生长晶锭的系统包括坩埚和堰。 坩埚具有用于在其中容纳硅熔体的基部和侧壁。 堰沿着坩埚的底部从坩埚的侧壁向内定位。 堰具有连接至少一对腿部的主体，以防止硅熔体在其间移动。