Abstract:
A delay locked loop (DLL) circuit having a duty cycle corrector (DCC) that has a broad range of duty cycle correction, consumes only a small amount of power, has few restrictions on operating frequency, and improves the characteristics of a memory device is described. The delay locked loop circuit includes an additional loop for duty cycle correction as well as loops for controlling a rising edge and a falling edge of output signals. Thus, the delay locked loop circuit can internally correct the duty cycle without the use of a phase blender.
Abstract:
A data output driver of a semiconductor memory device can minimize a difference in slew rate of an output signal according to a selected bit organization. The data output driver includes a pull-up driver and a pull-down driver. The pull-up driver pulls up an output terminal and the pull-down driver pulls down the output terminal. In particular, current driving capabilities of the pull-up driver and/or the pull-down driver are changed in response to bit organization information signals of the semiconductor memory device.