公开(公告)号：US20130248985A1

公开(公告)日：2013-09-26

申请号：US13429787

申请日：2012-03-26

Applicant: Kuldeep Amarnath ,  Michael Hargrove ,  Srikanth Samavedam

Inventor： Kuldeep Amarnath ,  Michael Hargrove ,  Srikanth Samavedam

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/1033 ,  H01L29/0847 ,  H01L29/42376 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66621 ,  H01L29/66636 ,  H01L29/7848

Abstract: Disclosed herein are various methods of forming replacement gate structures with a recessed channel region. In one example, the method includes forming a sacrificial gate structure above a semiconducting substrate, removing the sacrificial gate structure to thereby define an initial gate opening having sidewalls and to expose a surface of the substrate and performing an etching process on the exposed surface of the substrate to define a recessed channel in the substrate. The method includes the additional steps of forming a sidewall spacer within the initial gate opening on the sidewalls of the initial gate opening to thereby define a final gate opening and forming a replacement gate structure in the final gate opening.

Abstract translation: 本文公开了形成具有凹陷沟道区域的替换栅极结构的各种方法。 在一个示例中，该方法包括在半导体衬底之上形成牺牲栅极结构，去除牺牲栅极结构，从而限定具有侧壁的初始栅极开口并暴露衬底的表面，并在衬底的暴露表面上执行蚀刻工艺 衬底以在衬底中限定凹陷通道。 该方法包括在初始栅极开口的侧壁上的初始栅极开口内形成侧壁间隔物以由此限定最终栅极开口并在最终栅极开口中形成替换栅极结构的附加步骤。