公开(公告)号：US20070281404A1

公开(公告)日：2007-12-06

申请号：US11308961

申请日：2006-05-30

Applicant: Chiung-Wei Lin ,  Sheng-Chi Lee ,  Yi-Liang Chen ,  Rui-Cheng Huang ,  Te-Hua Teng

Inventor： Chiung-Wei Lin ,  Sheng-Chi Lee ,  Yi-Liang Chen ,  Rui-Cheng Huang ,  Te-Hua Teng

IPC: H01L21/84

CPC classification number: H01L21/02422 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1281

Abstract: A method of fabricating a poly silicon layer comprising the following steps is provided. First, a substrate is provided and an amorphous silicon layer is formed on the substrate. A patterned metal layer is formed on the amorphous silicon layer. Next, a pulsed rapid thermal annealing process is performed to form a metal silicide between the patterned metal layer and the amorphous silicon layer, wherein the patterned metal layer and the amorphous silicon layer are adopted for conducting thermal energy to the amorphous silicon layer such that the amorphous silicon layer is converted into a polysilicon layer. Finally, the patterned metal layer is removed. Accordingly, the above processes may prevent the poly silicon layer from metal contamination.

Abstract translation: 提供一种制造多晶硅层的方法，包括以下步骤。 首先，提供基板，在基板上形成非晶硅层。 图案化的金属层形成在非晶硅层上。 接下来，进行脉冲快速热退火处理，以在图案化金属层和非晶硅层之间形成金属硅化物，其中采用图案化金属层和非晶硅层将热能传导到非晶硅层，使得 非晶硅层转变为多晶硅层。 最后，去除图案化的金属层。 因此，上述过程可以防止多晶硅层遭受金属污染。