公开(公告)号：US20090033217A1

公开(公告)日：2009-02-05

申请号：US12251386

申请日：2008-10-14

申请人： Te-Hua Teng ,  Chia-Chien Chen ,  Fang-Yi Lu ,  Bing-Wei Wu ,  Yun-Pei Yang

发明人： Te-Hua Teng ,  Chia-Chien Chen ,  Fang-Yi Lu ,  Bing-Wei Wu ,  Yun-Pei Yang

IPC分类号： H01J1/62

CPC分类号： H01L27/322 ,  H01L27/1214 ,  H01L27/1288 ,  H01L27/3244 ,  H01L51/56

摘要： An AMOLED display device includes a substrate, a device layer, a flat layer, a first, a second, and a third color filter layers, a first, a second, and a third pixel electrodes, a first, a second and a third organic light emitting layers. The device layer on the substrate includes active devices. The flat layer on the device layer includes contact window openings. The first color filter layer on the flat layer has a first pixel area and a first opening configured above a part of the contact window openings. The second color filter layer on the flat layer has a second pixel area and a second opening configured above a part of the contact window openings. The third color filter layer on the flat layer has a third pixel area and a third opening configured above a part of the contact window openings.

摘要翻译： AMOLED显示装置包括基板，器件层，平坦层，第一，第二和第三滤色器层，第一，第二和第三像素电极，第一，第二和第三有机层 发光层。 衬底上的器件层包括有源器件。 器件层上的平坦层包括接触窗口。 平坦层上的第一滤色器层具有构造在接触窗口的一部分上方的第一像素区域和第一开口。 平坦层上的第二滤色器层具有第二像素区域和构造在接触窗口的一部分上方的第二开口。 平坦层上的第三滤色器层具有构造在接触窗口的一部分上方的第三像素区域和第三开口。

公开(公告)号：US20090020763A1

公开(公告)日：2009-01-22

申请号：US12242876

申请日：2008-09-30

申请人： Chiung-Wei Lin ,  Sheng-Chi Lee ,  Yi-Liang Chen ,  Rui-Cheng Huang ,  Te-Hua Teng

发明人： Chiung-Wei Lin ,  Sheng-Chi Lee ,  Yi-Liang Chen ,  Rui-Cheng Huang ,  Te-Hua Teng

IPC分类号： H01L29/04

CPC分类号： H01L21/02422 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1281

摘要： A method of fabricating a poly silicon layer comprising the following steps is provided. First, a substrate is provided and an amorphous silicon layer is formed on the substrate. A patterned metal layer is formed on the amorphous silicon layer. Next, a pulsed rapid thermal annealing process is performed to form a metal silicide between the patterned metal layer and the amorphous silicon layer, wherein the patterned metal layer and the amorphous silicon layer are adopted for conducting thermal energy to the amorphous silicon layer such that the amorphous silicon layer is converted into a polysilicon layer. Finally, the patterned metal layer is removed. A polysilicon layer formed according to the above-mentioned fabrication method is also provided. The grains of the poly silicon layer are spherical in shape.

摘要翻译： 提供一种制造多晶硅层的方法，包括以下步骤。 首先，提供基板，在基板上形成非晶硅层。 图案化的金属层形成在非晶硅层上。 接下来，进行脉冲快速热退火处理，以在图案化金属层和非晶硅层之间形成金属硅化物，其中采用图案化金属层和非晶硅层将热能传导到非晶硅层，使得 非晶硅层转变为多晶硅层。 最后，去除图案化的金属层。 还提供了根据上述制造方法形成的多晶硅层。 多晶硅层的晶粒呈球形。

公开(公告)号：US20070155135A1

公开(公告)日：2007-07-05

申请号：US11306899

申请日：2006-01-16

申请人： Yun-Pei Yang ,  Te-Hua Teng ,  Chih-Jen Shih ,  Chia-Chien Lu

发明人： Yun-Pei Yang ,  Te-Hua Teng ,  Chih-Jen Shih ,  Chia-Chien Lu

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02686 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277

摘要： A method of fabricating a polysilicon layer is provided. A substrate having a front surface and a back surface is provided. A buffer layer, an amorphous layer and a cap layer are sequentially formed on the front surface of the substrate. The cap layer is patterned to form a patterned cap layer exposing a portion of the amorphous layer, wherein the exposed portion of the amorphous layer is a crystallization initial region. A metallic catalytic layer is formed on the patterned cap layer, wherein the metallic catalytic layer contacts with the crystallization initial region of the amorphous layer. A laser annealing process is performed through the back surface of the substrate so that the amorphous layer is crystallized and transformed into a polysilicon layer from the crystallization initial region.

摘要翻译： 提供一种制造多晶硅层的方法。 提供具有前表面和后表面的基板。 缓冲层，非晶层和盖层依次形成在基板的前表面上。 图案化盖层以形成暴露非晶层的一部分的图案化盖层，其中非晶层的暴露部分是结晶初始区域。 在图案化盖层上形成金属催化剂层，其中金属催化剂层与非晶层的结晶初始区域接触。 通过衬底的背面进行激光退火处理，使得非晶层从结晶初始区域结晶化并转变为多晶硅层。

公开(公告)号：US20070238218A1

公开(公告)日：2007-10-11

申请号：US11308561

申请日：2006-04-07

申请人： Te-Hua Teng ,  Chia-Chien Chen ,  Fang-Yi Lu ,  Bing-Wei Wu ,  Yun-Pei Yang

发明人： Te-Hua Teng ,  Chia-Chien Chen ,  Fang-Yi Lu ,  Bing-Wei Wu ,  Yun-Pei Yang

IPC分类号： H01L51/40

CPC分类号： H01L27/322 ,  H01L27/1214 ,  H01L27/1288 ,  H01L27/3244 ,  H01L51/56

摘要： A method for fabricating an AMOLED display device is provided. A substrate is provided. A device layer having multiple active devices is formed on the substrate. A flat layer is configured on the device layer. A first, a second and a third color photoresistant layers are respectively configured on the flat layer and are patterned to form a first, a second and a third color filter layers. The first, the second and the third color filter layers respectively define a first, a second and a third pixel areas and are used for etching masks to etch the flat layer for exposing parts of the active devices. A first, a second and a third pixel electrode are respectively configured in the mentioned pixel areas and are electrically connected with the active devices. A first, a second and a third organic light emitting layers are respectively configured on the mentioned pixel electrodes.

摘要翻译： 提供一种制造AMOLED显示装置的方法。 提供基板。 在基板上形成具有多个有源器件的器件层。 在设备层上配置一个平面层。 第一，第二和第三彩色光致抗蚀剂层分别构造在平坦层上并被图案化以形成第一，第二和第三滤色器层。 第一，第二和第三滤色器层分别限定第一，第二和第三像素区域，并且用于蚀刻掩模以蚀刻平坦层以暴露有源器件的部分。 第一，第二和第三像素电极分别配置在所述像素区域中并与有源器件电连接。 第一，第二和第三有机发光层分别配置在所述像素电极上。

公开(公告)号：US07482186B2

公开(公告)日：2009-01-27

申请号：US11308561

申请日：2006-04-07

申请人： Te-Hua Teng ,  Chia-Chien Chen ,  Fang-Yi Lu ,  Bing-Wei Wu ,  Yun-Pei Yang

发明人： Te-Hua Teng ,  Chia-Chien Chen ,  Fang-Yi Lu ,  Bing-Wei Wu ,  Yun-Pei Yang

IPC分类号： H01L21/00

CPC分类号： H01L27/322 ,  H01L27/1214 ,  H01L27/1288 ,  H01L27/3244 ,  H01L51/56

摘要： A method for fabricating an AMOLED display device is provided. A substrate is provided. A device layer having multiple active devices is formed on the substrate. A flat layer is configured on the device layer. A first, a second and a third color photoresistant layers are respectively configured on the flat layer and are patterned to form a first, a second and a third color filter layers. The first, the second and the third color filter layers respectively define a first, a second and a third pixel areas and are used for etching masks to etch the flat layer for exposing parts of the active devices. A first, a second and a third pixel electrode are respectively configured in the mentioned pixel areas and are electrically connected with the active devices. A first, a second and a third organic light emitting layers are respectively configured on the mentioned pixel electrodes.

摘要翻译： 提供一种制造AMOLED显示装置的方法。 提供基板。 在基板上形成具有多个有源器件的器件层。 在设备层上配置一个平面层。 第一，第二和第三彩色光致抗蚀剂层分别构造在平坦层上并被图案化以形成第一，第二和第三滤色器层。 第一，第二和第三滤色器层分别限定第一，第二和第三像素区域，并且用于蚀刻掩模以蚀刻平坦层以暴露有源器件的部分。 第一，第二和第三像素电极分别配置在所述像素区域中并与有源器件电连接。 第一，第二和第三有机发光层分别配置在所述像素电极上。

公开(公告)号：US20070281404A1

公开(公告)日：2007-12-06

申请号：US11308961

申请日：2006-05-30

申请人： Chiung-Wei Lin ,  Sheng-Chi Lee ,  Yi-Liang Chen ,  Rui-Cheng Huang ,  Te-Hua Teng

发明人： Chiung-Wei Lin ,  Sheng-Chi Lee ,  Yi-Liang Chen ,  Rui-Cheng Huang ,  Te-Hua Teng

IPC分类号： H01L21/84

CPC分类号： H01L21/02422 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1281

摘要： A method of fabricating a poly silicon layer comprising the following steps is provided. First, a substrate is provided and an amorphous silicon layer is formed on the substrate. A patterned metal layer is formed on the amorphous silicon layer. Next, a pulsed rapid thermal annealing process is performed to form a metal silicide between the patterned metal layer and the amorphous silicon layer, wherein the patterned metal layer and the amorphous silicon layer are adopted for conducting thermal energy to the amorphous silicon layer such that the amorphous silicon layer is converted into a polysilicon layer. Finally, the patterned metal layer is removed. Accordingly, the above processes may prevent the poly silicon layer from metal contamination.

摘要翻译： 提供一种制造多晶硅层的方法，包括以下步骤。 首先，提供基板，在基板上形成非晶硅层。 图案化的金属层形成在非晶硅层上。 接下来，进行脉冲快速热退火处理，以在图案化金属层和非晶硅层之间形成金属硅化物，其中采用图案化金属层和非晶硅层将热能传导到非晶硅层，使得 非晶硅层转变为多晶硅层。 最后，去除图案化的金属层。 因此，上述过程可以防止多晶硅层遭受金属污染。

公开(公告)号：US08003986B2

公开(公告)日：2011-08-23

申请号：US12251386

申请日：2008-10-14

申请人： Te-Hua Teng ,  Chia-Chien Chen ,  Fang-Yi Lu ,  Bing-Wei Wu ,  Yun-Pei Yang

发明人： Te-Hua Teng ,  Chia-Chien Chen ,  Fang-Yi Lu ,  Bing-Wei Wu ,  Yun-Pei Yang

IPC分类号： H01L21/00

CPC分类号： H01L27/322 ,  H01L27/1214 ,  H01L27/1288 ,  H01L27/3244 ,  H01L51/56

摘要： An AMOLED display device includes a substrate, a device layer, a flat layer, a first, a second, and a third color filter layers, a first, a second, and a third pixel electrodes, a first, a second and a third organic light emitting layers. The device layer on the substrate includes active devices. The flat layer on the device layer includes contact window openings. The first color filter layer on the flat layer has a first pixel area and a first opening configured above a part of the contact window openings. The second color filter layer on the flat layer has a second pixel area and a second opening configured above a part of the contact window openings. The third color filter layer on the flat layer has a third pixel area and a third opening configured above a part of the contact window openings.

摘要翻译： AMOLED显示装置包括基板，器件层，平坦层，第一，第二和第三滤色器层，第一，第二和第三像素电极，第一，第二和第三有机层 发光层。 衬底上的器件层包括有源器件。 器件层上的平坦层包括接触窗口。 平坦层上的第一滤色器层具有构造在接触窗口的一部分上方的第一像素区域和第一开口。 平坦层上的第二滤色器层具有第二像素区域和构造在接触窗口的一部分上方的第二开口。 平坦层上的第三滤色器层具有构造在接触窗口的一部分上方的第三像素区域和第三开口。

公开(公告)号：US07449377B2

公开(公告)日：2008-11-11

申请号：US11308961

申请日：2006-05-30

申请人： Chiung-Wei Lin ,  Sheng-Chi Lee ,  Yi-Liang Chen ,  Rui-Cheng Huang ,  Te-Hua Teng

发明人： Chiung-Wei Lin ,  Sheng-Chi Lee ,  Yi-Liang Chen ,  Rui-Cheng Huang ,  Te-Hua Teng

IPC分类号： H01L21/84

CPC分类号： H01L21/02422 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1281

摘要： A method of fabricating a poly silicon layer comprising the following steps is provided. First, a substrate is provided and an amorphous silicon layer is formed on the substrate. A patterned metal layer is formed on the amorphous silicon layer. Next, a pulsed rapid thermal annealing process is performed to form a metal silicide between the patterned metal layer and the amorphous silicon layer, wherein the patterned metal layer and the amorphous silicon layer are adopted for conducting thermal energy to the amorphous silicon layer such that the amorphous silicon layer is converted into a polysilicon layer. Finally, the patterned metal layer is removed. Accordingly, the above processes may prevent the poly silicon layer from metal contamination.

摘要翻译： 提供一种制造多晶硅层的方法，包括以下步骤。 首先，提供基板，在基板上形成非晶硅层。 图案化的金属层形成在非晶硅层上。 接下来，进行脉冲快速热退火处理，以在图案化金属层和非晶硅层之间形成金属硅化物，其中采用图案化金属层和非晶硅层将热能传导到非晶硅层，使得 非晶硅层转变为多晶硅层。 最后，去除图案化的金属层。 因此，上述过程可以防止多晶硅层遭受金属污染。

公开(公告)号：US20070051956A1

公开(公告)日：2007-03-08

申请号：US11162159

申请日：2005-08-31

申请人： Chih-Jen Shih ,  Chun-Hsiang Fang ,  Te-Hua Teng ,  Chia-Chien Lu

发明人： Chih-Jen Shih ,  Chun-Hsiang Fang ,  Te-Hua Teng ,  Chia-Chien Lu

IPC分类号： H01L29/00

CPC分类号： H01L29/78645 ,  H01L29/78624

摘要： A thin film transistor having a substrate, a gate insulating layer, a double-gate structure, a first lightly doped region, and a second lightly doped region. The substrate has a source region and a drain region disposed on its opposite sides, a heavily doped region between source region and drain region, a first channel region between heavily doped region and source region and a second channel region between heavily doped region and drain region. The gate insulating layer covers the substrate. The double-gate structure has a first gate and a second gate disposed on gate insulating layer above the first and the second channel region, respectively. The first lightly doped region is disposed between second channel region and heavily doped region and the second lightly doped region between second channel region and drain region. The length of second lightly doped region is greater than that of first lightly doped region.

摘要翻译： 一种具有衬底，栅极绝缘层，双栅极结构，第一轻掺杂区和第二轻掺杂区的薄膜晶体管。 衬底具有设置在其相对侧上的源极区域和漏极区域，源极区域和漏极区域之间的重掺杂区域，重掺杂区域和源极区域之间的第一沟道区域以及重掺杂区域和漏极区域之间的第二沟道区域 。 栅极绝缘层覆盖基板。 双栅结构具有分别设置在第一和第二沟道区上方的栅极绝缘层上的第一栅极和第二栅极。 第一轻掺杂区域设置在第二沟道区域和重掺杂区域之间，第二轻掺杂区域设置在第二沟道区域和漏极区域之间。 第二轻掺杂区域的长度大于第一轻掺杂区域的长度。

公开(公告)号：US20070026588A1

公开(公告)日：2007-02-01

申请号：US11161259

申请日：2005-07-28

申请人： Te-Hua Teng ,  Chun-Hsiang Fang

发明人： Te-Hua Teng ,  Chun-Hsiang Fang

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/265 ,  H01L21/268 ,  H01L29/66757 ,  H01L29/78621

摘要： A method of fabricating a thin film transistor is provided. An amorphous silicon layer is formed on a substrate. Then, the amorphous silicon layer is transformed into a polysilicon layer. After that, a heat process is performed for repairing the lattice defects of the polysilicon layer. Then, an ion implantation process is performed on the polysilicon layer. A gate isolation layer is formed on the substrate to cover the polysilicon layer. Then, a gate electrode disposed above the polysilicon layer is formed on the gate isolation layer. After, a source and a drain are formed in the polysilicon layer, wherein a channel is formed between the source and the drain. A patterned dielectric layer exposing a portion of the source and the drain is formed on the substrate. A source electrode and a drain electrode electrically connected to the source and the drain respectively are formed on the patterned dielectric layer.

摘要翻译： 提供一种制造薄膜晶体管的方法。 在基板上形成非晶硅层。 然后，将非晶硅层转变成多晶硅层。 之后，进行热处理以修复多晶硅层的晶格缺陷。 然后，在多晶硅层上进行离子注入工艺。 在衬底上形成栅极隔离层以覆盖多晶硅层。 然后，在栅极隔离层上形成设置在多晶硅层上方的栅电极。 之后，在多晶硅层中形成源极和漏极，其中在源极和漏极之间形成沟道。 在衬底上形成暴露源极和漏极的一部分的图案化电介质层。 在图案化的电介质层上分别形成与源极和漏极电连接的源电极和漏电极。