公开(公告)号：US07449377B2

公开(公告)日：2008-11-11

申请号：US11308961

申请日：2006-05-30

Applicant: Chiung-Wei Lin ,  Sheng-Chi Lee ,  Yi-Liang Chen ,  Rui-Cheng Huang ,  Te-Hua Teng

Inventor： Chiung-Wei Lin ,  Sheng-Chi Lee ,  Yi-Liang Chen ,  Rui-Cheng Huang ,  Te-Hua Teng

IPC: H01L21/84

CPC classification number: H01L21/02422 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1281

Abstract: A method of fabricating a poly silicon layer comprising the following steps is provided. First, a substrate is provided and an amorphous silicon layer is formed on the substrate. A patterned metal layer is formed on the amorphous silicon layer. Next, a pulsed rapid thermal annealing process is performed to form a metal silicide between the patterned metal layer and the amorphous silicon layer, wherein the patterned metal layer and the amorphous silicon layer are adopted for conducting thermal energy to the amorphous silicon layer such that the amorphous silicon layer is converted into a polysilicon layer. Finally, the patterned metal layer is removed. Accordingly, the above processes may prevent the poly silicon layer from metal contamination.

Abstract translation: 提供一种制造多晶硅层的方法，包括以下步骤。 首先，提供基板，在基板上形成非晶硅层。 图案化的金属层形成在非晶硅层上。 接下来，进行脉冲快速热退火处理，以在图案化金属层和非晶硅层之间形成金属硅化物，其中采用图案化金属层和非晶硅层将热能传导到非晶硅层，使得 非晶硅层转变为多晶硅层。 最后，去除图案化的金属层。 因此，上述过程可以防止多晶硅层遭受金属污染。

公开(公告)号：US07615910B1

公开(公告)日：2009-11-10

申请号：US12222675

申请日：2008-08-14

Applicant: Wen-Ching Shih ,  Rui-Cheng Huang

Inventor： Wen-Ching Shih ,  Rui-Cheng Huang

IPC: H01L41/08

CPC classification number: H03H9/02574

Abstract: The present invention relates to a high frequency surface acoustic wave device, which may be manufactured by the same manufacturing equipment, and with the same material, as those required for manufacturing a low frequency surface acoustic wave device. The disclosed high frequency surface acoustic wave device comprises: a piezoelectric substrate; a high acoustic velocity layer formed on the surface of the piezoelectric substrate whose acoustic velocity of the surface acoustic wave is larger than 5000 m/sec; an input transducing part; and an output transducing part; wherein the input transducing part and the output transducing part are formed in pair on or below the surface of the high acoustic velocity layer. Besides, the high acoustic velocity layer is preferably made of aluminum oxide, and formed on the surface of the piezoelectric substrate by an electron-beam evaporation process. The thickness thereof is preferably between 2 μm and 20 μm.

Abstract translation: 高频声表面波装置技术领域本发明涉及一种高频声表面波装置，其可以由相同的制造装置制造，并且具有与制造低频声表面波装置所需的材料相同的材料。 所公开的高频表面声波装置包括：压电基片; 形成在压电基板的声表面波的声速大于5000m / sec的表面上的高声速层; 输入转换部分; 和输出转换部; 其中所述输入转换部分和所述输出转换部分成对地在所述高声速层的表面上或下方形成。 此外，高声速层优选由氧化铝制成，并通过电子束蒸发法形成在压电基板的表面上。 其厚度优选在2μm和20μm之间。

公开(公告)号：US20090020763A1

公开(公告)日：2009-01-22

申请号：US12242876

申请日：2008-09-30

Applicant: Chiung-Wei Lin ,  Sheng-Chi Lee ,  Yi-Liang Chen ,  Rui-Cheng Huang ,  Te-Hua Teng

Inventor： Chiung-Wei Lin ,  Sheng-Chi Lee ,  Yi-Liang Chen ,  Rui-Cheng Huang ,  Te-Hua Teng

IPC: H01L29/04

CPC classification number: H01L21/02422 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1281

Abstract: A method of fabricating a poly silicon layer comprising the following steps is provided. First, a substrate is provided and an amorphous silicon layer is formed on the substrate. A patterned metal layer is formed on the amorphous silicon layer. Next, a pulsed rapid thermal annealing process is performed to form a metal silicide between the patterned metal layer and the amorphous silicon layer, wherein the patterned metal layer and the amorphous silicon layer are adopted for conducting thermal energy to the amorphous silicon layer such that the amorphous silicon layer is converted into a polysilicon layer. Finally, the patterned metal layer is removed. A polysilicon layer formed according to the above-mentioned fabrication method is also provided. The grains of the poly silicon layer are spherical in shape.

Abstract translation: 提供一种制造多晶硅层的方法，包括以下步骤。 首先，提供基板，在基板上形成非晶硅层。 图案化的金属层形成在非晶硅层上。 接下来，进行脉冲快速热退火处理，以在图案化金属层和非晶硅层之间形成金属硅化物，其中采用图案化金属层和非晶硅层将热能传导到非晶硅层，使得 非晶硅层转变为多晶硅层。 最后，去除图案化的金属层。 还提供了根据上述制造方法形成的多晶硅层。 多晶硅层的晶粒呈球形。

公开(公告)号：US20070281404A1

公开(公告)日：2007-12-06

申请号：US11308961

申请日：2006-05-30

Applicant: Chiung-Wei Lin ,  Sheng-Chi Lee ,  Yi-Liang Chen ,  Rui-Cheng Huang ,  Te-Hua Teng

Inventor： Chiung-Wei Lin ,  Sheng-Chi Lee ,  Yi-Liang Chen ,  Rui-Cheng Huang ,  Te-Hua Teng

IPC: H01L21/84

CPC classification number: H01L21/02422 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1281

Abstract: A method of fabricating a poly silicon layer comprising the following steps is provided. First, a substrate is provided and an amorphous silicon layer is formed on the substrate. A patterned metal layer is formed on the amorphous silicon layer. Next, a pulsed rapid thermal annealing process is performed to form a metal silicide between the patterned metal layer and the amorphous silicon layer, wherein the patterned metal layer and the amorphous silicon layer are adopted for conducting thermal energy to the amorphous silicon layer such that the amorphous silicon layer is converted into a polysilicon layer. Finally, the patterned metal layer is removed. Accordingly, the above processes may prevent the poly silicon layer from metal contamination.

Abstract translation: 提供一种制造多晶硅层的方法，包括以下步骤。 首先，提供基板，在基板上形成非晶硅层。 图案化的金属层形成在非晶硅层上。 接下来，进行脉冲快速热退火处理，以在图案化金属层和非晶硅层之间形成金属硅化物，其中采用图案化金属层和非晶硅层将热能传导到非晶硅层，使得 非晶硅层转变为多晶硅层。 最后，去除图案化的金属层。 因此，上述过程可以防止多晶硅层遭受金属污染。