公开(公告)号：US20120257093A1

公开(公告)日：2012-10-11

申请号：US13097704

申请日：2011-04-29

申请人： Seung Hoon Sa ,  Woon Il Choi ,  Seong Hyung Park ,  Chun Hee Jeong ,  Dong Hyuk Park ,  Cheong Yong Park ,  Jung Chan Kyoung ,  Jung Wan Jeong ,  Dong Gyu Lee ,  Jong Min You ,  Hyun Jong Ji

发明人： Seung Hoon Sa ,  Woon Il Choi ,  Seong Hyung Park ,  Chun Hee Jeong ,  Dong Hyuk Park ,  Cheong Yong Park ,  Jung Chan Kyoung ,  Jung Wan Jeong ,  Dong Gyu Lee ,  Jong Min You ,  Hyun Jong Ji

IPC分类号： H04N5/335

CPC分类号： H01L27/14609 ,  H01L27/14641 ,  H04N5/3559 ,  H04N5/37452

摘要： Disclosed are a pixel, a pixel array, an image sensor including the pixel array and a method for operating the image sensor. The pixel includes a photo-electro conversion unit; a first capacitor for storing a first quantity of charges of the photo-electro conversion unit; a second capacitor for storing a second quantity of charges of the photo-electro conversion unit; and an output unit to output the first and second quantities of the charges.

摘要翻译： 公开了像素，像素阵列，包括像素阵列的图像传感器和用于操作图像传感器的方法。 像素包括光电转换单元; 用于存储光电转换单元的第一电荷量的第一电容器; 用于存储光电转换单元的第二数量的电荷的第二电容器; 以及输出单元，用于输出第一和第二数量的电荷。

公开(公告)号：US08599294B2

公开(公告)日：2013-12-03

申请号：US13097704

申请日：2011-04-29

申请人： Seung Hoon Sa ,  Woon II Choi ,  Seong Hyung Park ,  Chun Hee Jeong ,  Dong Hyuk Park ,  Cheong Yong Park ,  Jung Chan Kyoung ,  Jung Wan Jeong ,  Dong Gyu Lee ,  Jong Min You ,  Hyun Jong Ji

发明人： Seung Hoon Sa ,  Woon II Choi ,  Seong Hyung Park ,  Chun Hee Jeong ,  Dong Hyuk Park ,  Cheong Yong Park ,  Jung Chan Kyoung ,  Jung Wan Jeong ,  Dong Gyu Lee ,  Jong Min You ,  Hyun Jong Ji

IPC分类号： H04N5/335

CPC分类号： H01L27/14609 ,  H01L27/14641 ,  H04N5/3559 ,  H04N5/37452

摘要： Disclosed are a pixel, a pixel array, an image sensor including the pixel array and a method for operating the image sensor. The pixel includes a photo-electro conversion unit; a first capacitor for storing a first quantity of charges of the photo-electro conversion unit; a second capacitor for storing a second quantity of charges of the photo-electro conversion unit; and an output unit to output the first and second quantities of the charges.

摘要翻译： 公开了像素，像素阵列，包括像素阵列的图像传感器和用于操作图像传感器的方法。 像素包括光电转换单元; 用于存储光电转换单元的第一电荷量的第一电容器; 用于存储光电转换单元的第二数量的电荷的第二电容器; 以及输出单元，用于输出第一和第二数量的电荷。

公开(公告)号：US20120257092A1

公开(公告)日：2012-10-11

申请号：US13097681

申请日：2011-04-29

申请人： Seung Hoon Sa ,  Woon Il Choi ,  Seong Hyung Park ,  Chun Hee Jeong ,  Dong Hyuk Park ,  Cheong Yong Park ,  Jung Chan Kyoung ,  Jung Wan Jeong ,  Dong Gyu Lee ,  Jong Min You ,  Hyun Jong Ji

发明人： Seung Hoon Sa ,  Woon Il Choi ,  Seong Hyung Park ,  Chun Hee Jeong ,  Dong Hyuk Park ,  Cheong Yong Park ,  Jung Chan Kyoung ,  Jung Wan Jeong ,  Dong Gyu Lee ,  Jong Min You ,  Hyun Jong Ji

IPC分类号： H04N5/335

CPC分类号： H04N5/355 ,  H04N5/35536 ,  H04N5/37457

摘要： Disclosed are a pixel, a pixel array, an image sensor including the pixel array and a method for operating the image sensor. The pixel includes a photo-electro conversion unit; a capacitor for storing charges converted by the photo-electro conversion unit; an output switching device for outputting an electric potential of the capacitor; and a removal unit for removing a part of the charges converted by the photo-electro conversion unit.

摘要翻译： 公开了像素，像素阵列，包括像素阵列的图像传感器和用于操作图像传感器的方法。 像素包括光电转换单元; 用于存储由光电转换单元转换的电荷的电容器; 用于输出电容器的电位的输出开关装置; 以及去除由光电转换单元转换的电荷的一部分的去除单元。

公开(公告)号：US06586306B2

公开(公告)日：2003-07-01

申请号：US10125271

申请日：2002-04-18

申请人： Hi Deok Lee ,  Seong Hyung Park

发明人： Hi Deok Lee ,  Seong Hyung Park

IPC分类号： H01L21336

CPC分类号： H01L29/6659 ,  H01L29/665 ,  H01L29/7833

摘要： A method for fabricating a semiconductor device is disclosed. In a high speed device structure consisting of a salicide, in order to fabricate a device having at least two gate oxide structures in the identical chip, an LDD region of a core device region is formed, and an ion implant process for forming the LDD region of an input/output device region having a thick gate oxide and a process for forming a source/drain region at the rim of a field oxide of the core device region having a thin gate oxide are performed at the same time, thereby increasing a depth of a junction region. Thus, the junction leakage current is decreased in the junction region of the peripheral circuit region, and the process is simplified. As a result, a process yield and reliability of the device are improved.