公开(公告)号：US5144403A

公开(公告)日：1992-09-01

申请号：US595725

申请日：1990-10-09

申请人： Shang-yi Chiang ,  Wen-Ling M. Huang ,  Clifford I. Drowley ,  Paul V. Voorde

发明人： Shang-yi Chiang ,  Wen-Ling M. Huang ,  Clifford I. Drowley ,  Paul V. Voorde

IPC分类号： H01L21/331 ,  H01L29/06 ,  H01L29/10 ,  H01L29/732

CPC分类号： H01L29/66272 ,  H01L29/0649 ,  H01L29/1004 ,  H01L29/732

摘要： This invention pertains to a self-aligned, trench-isolated emitter structure and the method for forming same. The emitter structure comprises a portion of a bipolar transistor which exhibits improved function due to the emitter structure. A single layer of conductive material forms both the emitter and base contacts in the transistor structure, which structure has particularly shallow emitter and base junctions (about 0.15 micrometer or less). The self-aligned emitter contact, isolated from the base contact by a dielectric filled trench, permits overall size reduction of the device, whereby junction area and accompanying leakage across junctions is reduced. In addition, when the structure of the bipolar transistor is such that the trench isolates the emitter area from both the base contact and the extrinsic base, it is possible to provide improved base conductivity without generating peripheral transistor effects. The bipolar transistor can be either N-P-N type or P-N-P type depending on the materials of fabrication, although high speed devices are typically of the N-P-N type.

摘要翻译： 本发明涉及自对准，沟槽隔离的发射极结构及其形成方法。 发射极结构包括双极晶体管的一部分，其由于发射极结构而表现出改善的功能。 单层导电材料在晶体管结构中形成发射极和基极触点，该结构具有特别浅的发射极和基极结（约0.15微米或更小）。 通过介质填充的沟槽与基极接触隔离的自对准发射极接触允许器件的整体尺寸减小，从而降低了接合面积和相邻的接合泄漏。 此外，当双极晶体管的结构使得沟槽将发射极区域与基极接触和非本征基极隔离时，可以提供改进的基极导电性而不产生周边晶体管效应。 尽管高速器件通常是N-P-N型，但双极晶体管可以是N-P-N型或P-N-P型，这取决于制造材料。

公开(公告)号：US4173496A

公开(公告)日：1979-11-06

申请号：US910329

申请日：1978-05-30

申请人： Shang-Yi Chiang ,  Bernard G. Carbajal

发明人： Shang-Yi Chiang ,  Bernard G. Carbajal

IPC分类号： H01L27/142 ,  H01L31/06

CPC分类号： H01L31/0475 ,  Y02E10/50

摘要： An integrated, monolithic array of solar cells wherein isolation between cells permits series interconnection of the cells to provide an output voltage for the array equal to the sum of the voltages of the unit cells. Although normal PN junction isolation is ineffective when exposed to light, the present structure includes a form of junction isolation that is effective when exposed to light, or to other radiation. For example, a band of heavily doped P-type silicon, formed by thermomigration of aluminum through an N-type wafer, provides such isolation.

摘要翻译： 集成的单片太阳能电池阵列，其中电池之间的隔离允许电池的串联互连以提供阵列的输出电压等于单元电池的电压之和。 虽然正常的PN结隔离在暴露于光时无效，但本结构包括一种形式的结隔离，当暴露于光或其他辐射时是有效的。 例如，通过N型晶片的铝的热迁移形成的重掺杂P型硅的带提供了这种隔离。