公开(公告)号：US5144403A

公开(公告)日：1992-09-01

申请号：US595725

申请日：1990-10-09

申请人： Shang-yi Chiang ,  Wen-Ling M. Huang ,  Clifford I. Drowley ,  Paul V. Voorde

发明人： Shang-yi Chiang ,  Wen-Ling M. Huang ,  Clifford I. Drowley ,  Paul V. Voorde

IPC分类号： H01L21/331 ,  H01L29/06 ,  H01L29/10 ,  H01L29/732

CPC分类号： H01L29/66272 ,  H01L29/0649 ,  H01L29/1004 ,  H01L29/732

摘要： This invention pertains to a self-aligned, trench-isolated emitter structure and the method for forming same. The emitter structure comprises a portion of a bipolar transistor which exhibits improved function due to the emitter structure. A single layer of conductive material forms both the emitter and base contacts in the transistor structure, which structure has particularly shallow emitter and base junctions (about 0.15 micrometer or less). The self-aligned emitter contact, isolated from the base contact by a dielectric filled trench, permits overall size reduction of the device, whereby junction area and accompanying leakage across junctions is reduced. In addition, when the structure of the bipolar transistor is such that the trench isolates the emitter area from both the base contact and the extrinsic base, it is possible to provide improved base conductivity without generating peripheral transistor effects. The bipolar transistor can be either N-P-N type or P-N-P type depending on the materials of fabrication, although high speed devices are typically of the N-P-N type.

摘要翻译： 本发明涉及自对准，沟槽隔离的发射极结构及其形成方法。 发射极结构包括双极晶体管的一部分，其由于发射极结构而表现出改善的功能。 单层导电材料在晶体管结构中形成发射极和基极触点，该结构具有特别浅的发射极和基极结（约0.15微米或更小）。 通过介质填充的沟槽与基极接触隔离的自对准发射极接触允许器件的整体尺寸减小，从而降低了接合面积和相邻的接合泄漏。 此外，当双极晶体管的结构使得沟槽将发射极区域与基极接触和非本征基极隔离时，可以提供改进的基极导电性而不产生周边晶体管效应。 尽管高速器件通常是N-P-N型，但双极晶体管可以是N-P-N型或P-N-P型，这取决于制造材料。

公开(公告)号：US5008210A

公开(公告)日：1991-04-16

申请号：US510637

申请日：1990-04-18

申请人： Shang-yi Chiang ,  Wen-Ling M. Huang ,  Clifford I. Drowley ,  Paul V. Voorde

发明人： Shang-yi Chiang ,  Wen-Ling M. Huang ,  Clifford I. Drowley ,  Paul V. Voorde

IPC分类号： H01L21/331 ,  H01L29/06 ,  H01L29/10 ,  H01L29/732

CPC分类号： H01L29/66272 ,  H01L29/0649 ,  H01L29/1004 ,  H01L29/732 ,  Y10S148/011

摘要： This invention pertains to a self-aligned trench-isolated emitter structure and the method for forming same. The emitter structure comprises a portion of a bipolar transistor which exhibits improved function due to the emitter structure. A single layer of conductive material forms both the emitter and base contacts in the transistor structure, which structure has particularly shallow emitter and base junctions (about 0.15 micrometer or less). The self-aligned emitter contact, isolated from the base contact by a dielectric filled trench, permits overall size reduction of the device, whereby junction area and accompanying leakage across junctions is reduced. In addition, when the structure of the bipolar transistor is such that the trench isolates the emitter area from both the base contact and the extrinsic base, it is possible to provide improved base conductivity without generating peripheral transistor effects. The bipoloar transistor can be either N-P-N type or P-N-P type depending on the materials of fabrication, although high speed devices are typically of the N-P-N type. The method includes forming a sidewall spacer (246), creating an etch-masking layer (250), removing the spacer, and etching an isolation trench at the location previously occupied by the spacer.

摘要翻译： 本发明涉及自对准沟槽隔离发射极结构及其形成方法。 发射极结构包括双极晶体管的一部分，其由于发射极结构而表现出改善的功能。 单层导电材料在晶体管结构中形成发射极和基极触点，该结构具有特别浅的发射极和基极结（约0.15微米或更小）。 通过介质填充的沟槽与基极接触隔离的自对准发射极接触允许器件的整体尺寸减小，从而降低了接合面积和相邻的接合泄漏。 此外，当双极晶体管的结构使得沟槽将发射极区域与基极接触和非本征基极隔离时，可以提供改进的基极导电性而不产生周边晶体管效应。 尽管高速器件通常是N-P-N型，但双酚晶体管可以是N-P-N型或P-N-P型，这取决于制造材料。 该方法包括形成侧壁间隔物（246），产生蚀刻掩模层（250），去除间隔物，以及在先前由间隔物占据的位置处蚀刻隔离沟槽。