公开(公告)号：US06692704B2

公开(公告)日：2004-02-17

申请号：US09812071

申请日：2001-03-19

Applicant: David Emil Nelson ,  Bob X. Li ,  Mark David Hemingway ,  Suresh Baskaran ,  Joachim Kupe ,  Gregory Stephen Sims ,  Delbert L. Lessor ,  Carl Elmer Miller ,  Darrell R. Herling

Inventor： David Emil Nelson ,  Bob X. Li ,  Mark David Hemingway ,  Suresh Baskaran ,  Joachim Kupe ,  Gregory Stephen Sims ,  Delbert L. Lessor ,  Carl Elmer Miller ,  Darrell R. Herling

IPC: B01J1908

CPC classification number: B01J19/088 ,  B01D53/32 ,  B01J2219/0809 ,  B01J2219/0826 ,  B01J2219/0835 ,  B01J2219/0875 ,  B01J2219/0896 ,  H05H1/2406 ,  H05H2001/2412 ,  H05H2240/20 ,  H05H2245/121

Abstract: A non-thermal plasma (NTP) reactor structural conductor element includes a base conductor support and a high dielectric constant (“high k”) barrier layer supported by and substantially surrounding the base conductor support to form a structural conductor NTP reactor element. The structural conductor element may comprise a variety of shapes such as plates, sheets, half-box, I shapes, C shapes, or comb shapes, among others. In one embodiment, the dielectric barrier layer includes a coating applied to the base conductor support. In another embodiment, the dielectric barrier layer includes a high k film laminated to the base conductor support. In yet another embodiment, the base conductor support integrally forms the dielectric barrier layer via conversion of surfaces of the base conductor using electrochemical, thermal or chemical means to form the dielectric barrier layer.

Abstract translation: 非热等离子体（NTP）反应堆结构导体元件包括基底导体支撑件和由基本导体支撑件支撑并基本上围绕基底导体支撑件的高介电常数（“高k”）阻挡层，以形成结构导体NTP反应器元件。 结构导体元件可以包括各种形状，例如板，片，半盒，I形，C形或梳形等。 在一个实施例中，电介质阻挡层包括施加到基底导体支撑件上的涂层。 在另一个实施例中，电介质阻挡层包括层压到基底导体支撑体上的高k膜。 在另一个实施例中，基底导体支撑件通过使用电化学，热学或化学手段转换基底导体的表面而一体地形成电介质阻挡层，以形成电介质阻挡层。

公开(公告)号：US06383466B1

公开(公告)日：2002-05-07

申请号：US09222569

申请日：1998-12-28

Applicant: Karel Domansky ,  Glen E. Fryxell ,  Jun Liu ,  Nathan J. Kohler ,  Suresh Baskaran

Inventor： Karel Domansky ,  Glen E. Fryxell ,  Jun Liu ,  Nathan J. Kohler ,  Suresh Baskaran

IPC: C01B33159

CPC classification number: C01B37/02 ,  H01L21/31695

Abstract: The present invention is a method of dehydroxylating a silica surface that is hydroxylated having the steps of exposing the silica surface separately to a silicon organic compound and a dehydroxylating gas. Exposure to the silicon organic compound can be in liquid, gas or solution phase, and exposure to a dehydroxylating gas is typically at elevated temperatures. In one embodiment, the improvement of the dehydroxylation procedure is the repetition of the soaking and dehydroxylating gas exposure. In another embodiment, the improvement is the use of an inert gas that is substantially free of hydrogen. In yet another embodiment, the present invention is the combination of the two-step dehydroxylation method with a surfactant templating method of making a mesoporous film.

Abstract translation: 本发明是一种将羟基化的二氧化硅表面脱羟基化的方法，其具有将二氧化硅表面分别暴露于硅有机化合物和脱羟基化气体的步骤。 暴露于硅有机化合物可以是液体，气体或溶液相，并且暴露于脱羟基化气体通常处于升高的温度。 在一个实施方案中，脱羟基化程序的改进是重复浸泡和脱羟基化气体暴露。 在另一个实施方案中，改进是使用基本上不含氢的惰性气体。 在另一个实施方案中，本发明是两步脱羟基化方法与制备介孔膜的表面活性剂模板法的组合。

公开(公告)号：US5697043A

公开(公告)日：1997-12-09

申请号：US652872

申请日：1996-05-23

Applicant: Suresh Baskaran ,  Gordon L. Graff

Inventor： Suresh Baskaran ,  Gordon L. Graff

IPC: B22F1/00 ,  B22F3/00 ,  B22F3/22 ,  B28B1/00 ,  B29C67/00 ,  B29C67/04 ,  C04B35/622 ,  C04B35/632 ,  C04B35/636

CPC classification number: B29C67/0081 ,  B22F1/0059 ,  B22F3/008 ,  B22F3/22 ,  B29C67/04 ,  C04B35/622 ,  C04B35/636 ,  B29K2709/02

Abstract: The present invention is a novel method for freeform fabrication. Specifically, the method of solid freeform fabrication has the steps of: (a) preparing a slurry by mixing powder particles with a suspension medium and a gelling polysaccharide; (b) making a layer by depositing an amount of said powder slurry in a confined region; (c) hardening a selected portion of the layer by applying a gelling agent to the selected portion; and (d) repeating steps (b) and (c) to make successive layers and forming a layered object. In many applications, it is desirable to remove unhardened material followed by heating to remove gellable polysaccharide then sintering.

Abstract translation: 本发明是一种用于自由形状制作的新颖方法。 具体地说，固体自由形成方法具有以下步骤：（a）通过将粉末颗粒与悬浮介质和胶凝多糖混合来制备浆料; （b）通过在限定区域中沉积一定数量的所述粉末浆料来制备层; （c）通过将胶凝剂施加到所选择的部分来硬化所述层的选定部分; 和（d）重复步骤（b）和（c）以制备连续层并形成分层物体。 在许多应用中，期望除去未硬化的材料，然后加热以除去可凝胶的多糖然后烧结。