公开(公告)号：US06956250B2

公开(公告)日：2005-10-18

申请号：US09792409

申请日：2001-02-23

Applicant: Ricardo Borges ,  Kevin J. Linthicum ,  T. Warren Weeks ,  Thomas Gehrke

Inventor： Ricardo Borges ,  Kevin J. Linthicum ,  T. Warren Weeks ,  Thomas Gehrke

IPC: H01L23/34 ,  H01L23/373 ,  H01L29/20 ,  H01L33/00 ,  H01L31/0328

CPC classification number: H01L23/3735 ,  H01L29/2003 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention includes providing gallium nitride materials including thermally conductive regions and methods to form such materials. The gallium nitride materials may be used to form semiconductor devices. The thermally conductive regions may include heat spreading layers and heat sinks. Heat spreading layers distribute beat generated during device operation over relatively large areas to prevent excessive localized heating. Heat sinks typically are formed at either the backside or topside of the device and facilitate heat dissipation to the environment. It may be preferable for devices to include a heat spreading layer which is connected to a heat sink at the backside of the device. A variety of semiconductor devices may utilize features of the invention including devices on silicon substrates and devices which generate large amounts of heat such as power transistors.

Abstract translation: 本发明包括提供包括导热区域的氮化镓材料和形成这种材料的方法。 氮化镓材料可用于形成半导体器件。 导热区域可以包括散热层和散热片。 热扩散层在比较大的区域中分配在设备操作期间产生的节拍，以防止过度的局部加热。 散热器通常形成在设备的背面或顶部的两侧，并且便于对环境的散热。 对于装置来说，优选地包括连接到装置背面的散热器的散热层。 各种半导体器件可以利用本发明的特征，包括硅衬底上的器件和产生大量热量的器件，例如功率晶体管。

公开(公告)号：US06611002B2

公开(公告)日：2003-08-26

申请号：US09792414

申请日：2001-02-23

Applicant: T. Warren Weeks ,  Edwin L. Piner ,  Ricardo M. Borges ,  Kevin J. Linthicum

Inventor： T. Warren Weeks ,  Edwin L. Piner ,  Ricardo M. Borges ,  Kevin J. Linthicum

IPC: H01L3300

CPC classification number: H01L33/38 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/417 ,  H01L29/802 ,  H01L29/861 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/382 ,  H01L47/026 ,  H01L2924/10155

Abstract: The invention includes providing gallium nitride material devices having backside vias and methods to form the devices. The devices include a gallium nitride material formed over a substrate, such as silicon. The device also may include one or more non-conducting layers between the substrate and the gallium nitride material which can aid in the deposition of the gallium nitride material. A via is provided which extends from the backside of the device through the non-conducting layer(s) to enable electrical conduction between an electrical contact deposited within the via and, for example, an electrical contact on the topside of the device. Thus, devices of the invention may be vertically conducting. Exemplary devices include laser diodes (LDs), light emitting diodes (LEDs), power rectifier diodes, FETs (e.g., HFETs), Gunn-effect diodes, and varactor diodes, among others.