公开(公告)号：US20190237441A1

公开(公告)日：2019-08-01

申请号：US16237129

申请日：2018-12-31

申请人： SHARP KABUSHIKI KAISHA

发明人： HIROYOSHI HIGASHISAKA

IPC分类号： H01L25/075 ,  H01L23/544 ,  H01L33/56 ,  H01L33/50 ,  H01L21/66 ,  H01L33/00

CPC分类号： H01L25/0753 ,  H01L22/12 ,  H01L23/544 ,  H01L33/0079 ,  H01L33/502 ,  H01L33/56 ,  H01L2223/54406 ,  H01L2933/0041 ,  H01L2933/005

摘要： A display device includes plural pixel elements that are arranged on a foundation substrate in a matrix manner. Among the plural pixel elements, outside pixel elements positioned in an outer periphery are set as a non-display region, and inside pixel elements positioned on an inside are set as a display region.

公开(公告)号：US20190207055A1

公开(公告)日：2019-07-04

申请号：US16311816

申请日：2017-05-30

申请人： DOWA Electronics Materials Co., Ltd.

发明人： Jumpei YAMAMOTO ,  Tetsuya IKUTA

IPC分类号： H01L33/00 ,  H01L33/06 ,  H01L33/30 ,  H01L33/40 ,  H01L33/38

CPC分类号： H01L33/0062 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/10 ,  H01L33/30 ,  H01L33/38 ,  H01L33/405 ,  H01L2933/0016

摘要： Provided is a method of manufacturing a semiconductor optical device, which makes it possible to reduce the thickness of a semiconductor optical device including InGaAsP-based III-V compound semiconductor layers containing at least In and P to a thickness smaller than that of conventional devices, and provide a semiconductor optical device. The method of manufacturing a semiconductor optical device includes a step of forming a semiconductor laminate 30 on the InP growth substrate; a step of bonding the semiconductor laminate 30 to the support substrate 80 formed from a Si substrate, with at least the metal bonding layer 70 therebetween; and a step of removing the InP growth substrate 10.

公开(公告)号：US20190198711A1

公开(公告)日：2019-06-27

申请号：US16231776

申请日：2018-12-24

申请人： LG INNOTEK CO., LTD.

发明人： Hyun Ju KIM ,  Hyung Jo PARK ,  Hwan Kyo KIM

IPC分类号： H01L33/10 ,  H01L33/20 ,  H01L33/62 ,  H01L33/36 ,  H01L23/00

CPC分类号： H01L33/10 ,  H01L24/05 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/20 ,  H01L33/36 ,  H01L33/382 ,  H01L33/387 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2933/0066

摘要： Exemplary embodiments provide a semiconductor device including: a semiconductor structure which includes a first-conductive-type semiconductor layer, a second-conductive-type semiconductor layer, and an active layer disposed between the first-conductive-type semiconductor layer and the second-conductive-type semiconductor layer, wherein the semiconductor structure has a first recess passing through the second-conductive-type semiconductor layer, the active layer and a first portion of the first-conductive-type semiconductor layer; and a plurality of second recesses passing through the second-conductive-type semiconductor layer, the active layer and a second portion of the first-conductive-type semiconductor layer, wherein the first recess is disposed along an outer surface of the semiconductor structure, wherein the plurality of second recesses are surrounded by the first recess.

公开(公告)号：US20190198564A1

公开(公告)日：2019-06-27

申请号：US16226288

申请日：2018-12-19

申请人： Lumileds LLC

发明人： Ashish TANDON ,  Rajat SHARMA ,  Joseph Robert FLEMISH ,  Andrei PAPOU ,  Wen YU ,  Erik YOUNG ,  Yu-Chen SHEN ,  Luke GORDON

IPC分类号： H01L27/15 ,  F21S41/153 ,  H01L33/50 ,  H01L33/00 ,  H01L33/30

CPC分类号： H01L27/156 ,  F21S41/153 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/20 ,  H01L33/305 ,  H01L33/32 ,  H01L33/36 ,  H01L33/502 ,  H01L33/505 ,  H01L33/507 ,  H01L2933/0016 ,  H01L2933/0041

摘要： A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region. The device may include a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.

公开(公告)号：US20190189845A1

公开(公告)日：2019-06-20

申请号：US16271102

申请日：2019-02-08

申请人： Seoul National University R&DB Foundation ,  Hexasolution Co., Ltd.

发明人： Eui-Joon YOON ,  Dae-Young MOON ,  Jeong-Hwan JANG ,  Yongjo PARK ,  Duk-Kyu BAE

IPC分类号： H01L33/12 ,  H01L21/67 ,  H01L21/02 ,  H01L33/22 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/12 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/67092 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32

摘要： A semiconductor stacking structure according to the present invention comprises: a monocrystalline substrate which is disparate from a nitride semiconductor; an inorganic thin film which is formed on a substrate to define a cavity between the inorganic thin film and the substrate, wherein at least a portion of the inorganic thin film is crystallized with a crystal structure that is the same as the substrate; and a nitride semiconductor layer which is grown from a crystallized inorganic thin film above the cavity. The method and apparatus for separating a nitride semiconductor layer according the present invention mechanically separate between the substrate and the nitride semiconductor layer. The mechanical separation can be performed by a method of separation of applying a vertical force to the substrate and the nitride semiconductor layer, a method of separation of applying a horizontal force, a method of separation of applying a force of a relative circular motion, and a combination thereof.

公开(公告)号：US20190189838A1

公开(公告)日：2019-06-20

申请号：US16208045

申请日：2018-12-03

申请人： LUMILEDS LLC

发明人： John Epler ,  James G. Neff ,  Oleg B. Shchekin

IPC分类号： H01L33/00 ,  H01L33/16

CPC分类号： H01L33/0079 ,  H01L33/10 ,  H01L33/16 ,  H01L33/22 ,  H01L33/38 ,  H01L33/50 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2933/0083 ,  H01L2924/00

摘要： A device comprises a window layer and a light-directing structure comprising a porous semiconductor layer formed in an n-type region. The device comprises a semiconductor structure, disposed between the window layer and the light-directing structure, comprising a light emitting layer. An opening is formed in the semiconductor structure. A first metal layer is in direct contact with the light-directing structure. A dielectric layer is disposed over the first metal layer and in the opening. A second metal layer is disposed over the dielectric layer. A transparent conductive oxide is disposed between the p-type region and the window layer and in direct contact with the p-type region. A first hole is formed in the dielectric layer, wherein the first hole exposes the transparent conductive oxide such that the second metal layer is in direct contact with the transparent conductive oxide through the first hole.

公开(公告)号：US20190189597A1

公开(公告)日：2019-06-20

申请号：US16273579

申请日：2019-02-12

申请人： Micron Technology, Inc.

发明人： Scott D. Schellhammer ,  Vladimir Odnoblyudov ,  Jeremy S. Frei

IPC分类号： H01L25/075 ,  H01L23/00 ,  H01L33/48 ,  H01L33/00 ,  H01L21/18 ,  H01L21/20 ,  H01L23/495 ,  H01L33/62 ,  H01L21/447

CPC分类号： H01L25/0753 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/447 ,  H01L23/49513 ,  H01L24/04 ,  H01L24/06 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L24/97 ,  H01L33/0066 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/83001 ,  H01L2224/83005 ,  H01L2224/83121 ,  H01L2224/8314 ,  H01L2224/83193 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.

公开(公告)号：US20190081025A1

公开(公告)日：2019-03-14

申请号：US15874720

申请日：2018-01-18

申请人： LG ELECTRONICS INC.

发明人： Younghak CHANG ,  Minwoo LEE ,  Yeonhong JUNG ,  Youngje JO

IPC分类号： H01L25/075 ,  H01L33/02 ,  H01L33/00 ,  H01L33/20 ,  H01L33/62

CPC分类号： H01L25/0753 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/025 ,  H01L33/16 ,  H01L33/20 ,  H01L33/22 ,  H01L33/325 ,  H01L33/62 ,  H01L2933/0025

摘要： A semiconductor light emitting device including a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer on which the first conductive electrode is disposed; a second conductive semiconductor layer overlapping the first conductive semiconductor layer, on which the second conductive electrode is disposed; and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. Further, the second conductive semiconductor layer includes a first layer including a porous material capable of being electro-polished and disposed on an outer surface of the semiconductor light emitting device; a second layer disposed under the first layer and having a lower impurity concentration than the first layer; and a third layer disposed between the second layer and the active layer and having a higher impurity concentration than the second layer.

公开(公告)号：US20190051796A1

公开(公告)日：2019-02-14

申请号：US16162030

申请日：2018-10-16

申请人： LG INNOTEK CO., LTD.

发明人： Myung Cheol YOO

IPC分类号： H01L33/32 ,  H01L33/54 ,  H01L33/62 ,  H01L33/42 ,  H01L33/38 ,  H01L33/60 ,  H01L33/04

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/04 ,  H01L33/12 ,  H01L33/14 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/54 ,  H01L33/60 ,  H01L33/62 ,  H01L33/641 ,  H01L33/647

摘要： A light emitting device can include a metal support structure comprising Cu; an adhesion structure on the metal support structure; a reflective conductive contact on the adhesion structure; a GaN-based semiconductor structure on the reflective conductive contact, in which the GaN-based semiconductor structure includes a first-type semiconductor layer on the metal support structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer, the GaN-based semiconductor structure includes a bottom surface proximate to the metal support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface, and a first thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers; an interface layer on the GaN-based semiconductor structure; and a contact pad on the interface layer, in which a second thickness of the metal support structure is 0.5 times less than a width of the top surface of the GaN-based semiconductor structure.

公开(公告)号：US20190051697A1

公开(公告)日：2019-02-14

申请号：US15763610

申请日：2017-01-12

申请人： Enkris Semiconductor, Inc.

发明人： Liyang Zhang

IPC分类号： H01L27/15 ,  H01L33/62 ,  H01L33/46 ,  H01L33/38 ,  H01L33/44 ,  H01L33/50 ,  H01L33/00

CPC分类号： H01L27/156 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32 ,  H01L33/382 ,  H01L33/44 ,  H01L33/46 ,  H01L33/505 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0041 ,  H01L2933/0066

摘要： A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes: a substrate, a bonding metal layer, a reflective layer, a first conductive layer, an active layer, a second conductive layer, first electrode(s) and second electrode(s). The first electrode(s) extends, from one side of the bonding metal layer away from the substrate, to the first conductive layer, to be connected with the bonding metal layer and the first conductive layer. The second electrode(s) penetrates through the substrate and the bonding metal layer to be in contact with the reflective layer. The semiconductor device, forming a structure sharing the first conductive layer, has more uniform illumination and a higher light extraction rate, and eliminates interferences between pixel units, achieves better uniformity of emitted light wavelength and makes distribution of electric current flowing through different pixel units more even.