公开(公告)号：US06229160B1

公开(公告)日：2001-05-08

申请号：US08868009

申请日：1997-06-03

申请人： Michael R Krames ,  Fred A Kish, Jr. ,  Tun S Tan

发明人： Michael R Krames ,  Fred A Kish, Jr. ,  Tun S Tan

IPC分类号： H01L3300

CPC分类号： H01L33/20 ,  H01L33/02

摘要： The invention is a method for designing semiconductor light emitting devices such that the side surfaces (surfaces not parallel to the epitaxial layers) are formed at preferred angles relative to vertical (normal to the plane of the light-emitting active layer) to improve light extraction efficiency and increase total light output efficiency. Device designs are chosen to improve efficiency without resorting to excessive active area-yield loss due to shaping. As such, these designs are suitable for low-cost, high-volume manufacturing of semiconductor light-emitting devices with improved characteristics.

摘要翻译： 本发明是一种用于设计半导体发光器件的方法，使得侧表面（不平行于外延层的表面）以相对于垂直（垂直于发光有源层的平面）的优选角度形成，以改善光提取 提高总光输出效率。 选择器件设计以提高效率，而不需要由于成形而过度的有效面积产量损失。 因此，这些设计适用于具有改进特性的半导体发光器件的低成本，大批量制造。