Abstract:
A linear polishing apparatus for polishing a semiconductor substrate including a novel polishing belt arrangement with at least two polishing belts forming a continuous loop. Each belt having an outside polishing surface and an inside smooth surface. The belts are spaced alongside each other sharing a common axis at each end. The belts are looped around a pair of rollers making up a driver roller at one end and a driven roller at the other end. A platen member interposes each belt and is placed between the pairs of rollers. The platen provides a polishing plane and supporting surface for the polishing belts. The polishing plane includes a plurality of holes communicating with an elongated plenum chamber underlying the plane. The chamber supplies a compressed gas to impart an upward pressure against the polishing belts. The driver rollers are coupled to separate motors to independently drive and control at least said two of the polishing belts.
Abstract:
A method of manufacturing a shallow trench isolation using a polishing step with reduced dishing. A pad layer, a polish stop layer, a buffer layer and a hard mask layer are formed over a substrate. The hard mask layer has a hard mask opening. We etch a trench opening in the buffer layer, the polish stop layer, the pad layer and form a trench in the substrate using the hard mask layer as an etch mask. We form an oxide trench liner layer along the sidewalls of the trench and an oxide buffer liner layer on the sidewalls of the buffer layer using a thermal oxidation. The hard mask layer prevents the oxidation of the top surface of the buffer layer during the oxidation of the oxide trench liner. This prevents the buffer layer from being consumed by the oxidation and leaves the buffer layer to act in the subsequent chemical-mechanical polish (CMP) step. Next, an insulating layer is formed at least partially filling the trench. The insulating layer is chemical-mechanical polished using the polish stop layer as a stop layer. The buffer layer acts to prevent field oxide dishing during the chemical-mechanical polish.
Abstract:
A method of generating care areas is disclosed. An artwork file of a layout of a product is provided and a cell tree of the layout is formed. The cell tree includes a plurality of cells of the layout arranged in a hierarchical order. The method also includes defining care areas in the artwork file of the layout.
Abstract:
A mechanism by which rule attributes of varying types and numbers can be stored and searched in an efficient manner is provided by storing attribute values of each rule in a child table of a parent rule table. The child table is normalized and contains a foreign key pointing back to the parent rule table and has attribute-value pairs as table columns of the child table. Each rule is then represented by one row of the parent rule table and one or more corresponding rows of the child rule details table. A variable and unlimited number of attribute dimensions is supported among the rules, and search performance is improved through the use of database indexes on the rule details table attribute columns. Metadata representing the structure of the child rule details table will identify the data attributes for each dimension.