公开(公告)号：US20100048006A1

公开(公告)日：2010-02-25

申请号：US12194688

申请日：2008-08-20

Applicant: Hong Min Huang ,  Carol Gao ,  Zhe Ding ,  Albert Peng ,  Ya Qun Liu

Inventor： Hong Min Huang ,  Carol Gao ,  Zhe Ding ,  Albert Peng ,  Ya Qun Liu

IPC: H01L21/22 ,  C09K3/00

CPC classification number: H01L21/228 ,  H01L21/2225

Abstract: Phosphorous-comprising dopants, methods for forming phosphorous-doped regions in a semiconductor material, and methods for fabricating phosphorous-comprising dopants are provided. In one embodiment, a phosphorous-comprising dopant comprises a phosphorous source comprising a phosphorous-comprising salt, a phosphorous-comprising acid, phosphorous-comprising anions, or a combination thereof, an alkaline material, cations from an alkaline material, or a combination thereof, and a liquid medium.

Abstract translation: 提供含磷的掺杂剂，在半导体材料中形成磷掺杂区域的方法，以及制造含磷掺杂剂的方法。 在一个实施方案中，含磷掺杂剂包括磷源，其包含含磷的盐，含磷的酸，含磷的阴离子或其组合，碱性材料，来自碱性材料的阳离子或其组合 ，和液体介质。