公开(公告)号：US20130260564A1

公开(公告)日：2013-10-03

申请号：US13624693

申请日：2012-09-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Kedar Sapre ,  Rossella Mininni ,  Jing Tang

IPC: H01L29/40

CPC classification number: H01L29/401 ,  H01L21/31116 ,  H01L29/66545

Abstract: Methods of depositing and etching dielectric layers from a surface of a semiconductor substrate are disclosed. The methods may include depositing a first dielectric layer having a first wet etch rate in aqueous HF. The methods also may include depositing a second dielectric layer that may be initially flowable following deposition, and the second dielectric layer may have a second wet etch rate in aqueous HF that is higher than the first wet etch rate. The methods may further include etching the first and second dielectric layers with an etchant gas mixture, where the first and second dielectric layers have a ratio of etch rates that is closer to one than the ratio of the second wet etch rate to the first wet etch rate in aqueous HF.

Abstract translation: 公开了从半导体衬底的表面沉积和蚀刻电介质层的方法。 所述方法可以包括在HF水溶液中沉积具有第一湿蚀刻速率的第一介电层。 所述方法还可以包括沉积第二电介质层，其可以在沉积之后最初可流动，并且第二介电层可以具有高于第一湿蚀刻速率的HF水溶液中的第二湿蚀刻速率。 所述方法可以进一步包括用蚀刻剂气体混合物蚀刻第一和第二介电层，其中第一和第二介电层具有比第二湿蚀刻速率与第一湿蚀刻的比率更接近的蚀刻速率比 在HF水溶液中。