公开(公告)号：US20210090251A1

公开(公告)日：2021-03-25

申请号：US17028747

申请日：2020-09-22

Applicant: Applied Materials, Inc.

Inventor： Sumit Kumar Jha ,  Aditya Sista ,  Ganesh Kumar Mohanur Raghunathan ,  Ubhay Kumar ,  Kedar Sapre

IPC: G06T7/00 ,  G06T7/11 ,  G06K9/32 ,  G06K9/62

Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for training a machine learning model to segment magnified images of tissue samples. The method includes obtaining a magnified image of a tissue sample; processing an input comprising: the image, features derived from the image, or both, in accordance with current values of model parameters of a machine learning model to generate an automatic segmentation of the image into a plurality of tissue classes; providing, to a user through a user interface, an indication of: (i) the image, and (ii) the automatic segmentation of the image; determining an edited segmentation of the image, comprising applying modifications specified by the user to the automatic segmentation of the image; and determining updated values of the model parameters of the machine learning model based the edited segmentation of the image.

公开(公告)号：US08927390B2

公开(公告)日：2015-01-06

申请号：US13624724

申请日：2012-09-21

Applicant: Applied Materials, Inc.

Inventor： Kedar Sapre ,  Nitin Ingle ,  Jing Tang

IPC: H01L21/76 ,  H01L21/762

CPC classification number: H01L21/3065 ,  H01L21/3081 ,  H01L21/76224

Abstract: A method of etching a recess in a semiconductor substrate is described. The method may include forming a dielectric liner layer in a trench of the substrate where the liner layer has a first density. The method may also include depositing a second dielectric layer at least partially in the trench on the liner layer. The second dielectric layer may initially be flowable following the deposition, and have a second density that is less than the first density of the liner. The method may further include exposing the substrate to a dry etchant, where the etchant removes a portion of the first liner layer and the second dielectric layer to form a recess, where the dry etchant includes a fluorine-containing compound and molecular hydrogen, and where the etch rate ratio for removing the first dielectric liner layer to removing the second dielectric layer is about 1:1.2 to about 1:1.

Abstract translation: 描述了蚀刻半导体衬底中的凹部的方法。 该方法可以包括在衬底的沟槽中形成介质衬垫层，其中衬层具有第一密度。 该方法还可以包括至少部分地在衬垫层上的沟槽中沉积第二电介质层。 第二电介质层可以首先在沉积之后流动，并且具有小于衬垫的第一密度的第二密度。 该方法可以进一步包括将衬底暴露于干燥蚀刻剂，其中蚀刻剂去除第一衬里层和第二介电层的一部分以形成凹部，其中干蚀刻剂包括含氟化合物和分子氢，并且其中 用于去除第一介电衬垫层以去除第二介电层的蚀刻速率比为约1:1.2至约1:1。

公开(公告)号：US20150031211A1

公开(公告)日：2015-01-29

申请号：US14484152

申请日：2014-09-11

Applicant: Applied Materials, Inc.

Inventor： Kedar Sapre ,  Nitin Ingle ,  Jing Tang

IPC: H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/3065 ,  H01L21/3081 ,  H01L21/76224

Abstract: A method of etching a recess in a semiconductor substrate is described. The method may include forming a dielectric liner layer in a trench of the substrate where the liner layer has a first density. The method may also include depositing a second dielectric layer at least partially in the trench on the liner layer. The second dielectric layer may initially be flowable following the deposition, and have a second density that is less than the first density of the liner. The method may further include exposing the substrate to a dry etchant, where the etchant removes a portion of the first liner layer and the second dielectric layer to form a recess, where the dry etchant includes a fluorine-containing compound and molecular hydrogen, and where the etch rate ratio for removing the first dielectric liner layer to removing the second dielectric layer is about 1:1.2 to about 1:1.

Abstract translation: 描述了蚀刻半导体衬底中的凹部的方法。 该方法可以包括在衬底的沟槽中形成介质衬垫层，其中衬层具有第一密度。 该方法还可以包括至少部分地在衬垫层上的沟槽中沉积第二电介质层。 第二电介质层可以首先在沉积之后流动，并且具有小于衬垫的第一密度的第二密度。 该方法可以进一步包括将衬底暴露于干燥蚀刻剂，其中蚀刻剂去除第一衬里层和第二介电层的一部分以形成凹部，其中干蚀刻剂包括含氟化合物和分子氢，并且其中 用于去除第一介电衬垫层以去除第二介电层的蚀刻速率比为约1:1.2至约1:1。

公开(公告)号：US11663722B2

公开(公告)日：2023-05-30

申请号：US17729377

申请日：2022-04-26

Applicant: Applied Materials, Inc.

Inventor： Sumit Kumar Jha ,  Aditya Sista ,  Ganesh Kumar Mohanur Raghunathan ,  Ubhay Kumar ,  Kedar Sapre

IPC: G06K9/00 ,  G06T7/00 ,  G06T7/11 ,  G06V10/25 ,  G06F18/22 ,  G06F18/243

CPC classification number: G06T7/0012 ,  G06F18/22 ,  G06F18/24323 ,  G06T7/11 ,  G06V10/25 ,  G06T2207/10056 ,  G06T2207/20084 ,  G06T2207/30024

Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for training a machine learning model to segment magnified images of tissue samples. The method includes obtaining a magnified image of a tissue sample; processing an input comprising: the image, features derived from the image, or both, in accordance with current values of model parameters of a machine learning model to generate an automatic segmentation of the image into a plurality of tissue classes; providing, to a user through a user interface, an indication of: (i) the image, and (ii) the automatic segmentation of the image; determining an edited segmentation of the image, comprising applying modifications specified by the user to the automatic segmentation of the image; and determining updated values of the model parameters of the machine learning model based the edited segmentation of the image.

公开(公告)号：US20220261992A1

公开(公告)日：2022-08-18

申请号：US17729377

申请日：2022-04-26

Applicant: Applied Materials, Inc.

Inventor： Sumit Kumar Jha ,  Aditya Sista ,  Ganesh Kumar Mohanur Raghunathan ,  Ubhay Kumar ,  Kedar Sapre

IPC: G06T7/00 ,  G06T7/11 ,  G06K9/62 ,  G06V10/25

Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for training a machine learning model to segment magnified images of tissue samples. The method includes obtaining a magnified image of a tissue sample; processing an input comprising: the image, features derived from the image, or both, in accordance with current values of model parameters of a machine learning model to generate an automatic segmentation of the image into a plurality of tissue classes; providing, to a user through a user interface, an indication of: (i) the image, and (ii) the automatic segmentation of the image; determining an edited segmentation of the image, comprising applying modifications specified by the user to the automatic segmentation of the image; and determining updated values of the model parameters of the machine learning model based the edited segmentation of the image.

公开(公告)号：US20130260533A1

公开(公告)日：2013-10-03

申请号：US13624724

申请日：2012-09-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Kedar Sapre ,  Nitin Ingle ,  Jing Tang

IPC: H01L21/762

CPC classification number: H01L21/3065 ,  H01L21/3081 ,  H01L21/76224

Abstract: A method of etching a recess in a semiconductor substrate is described. The method may include forming a dielectric liner layer in a trench of the substrate where the liner layer has a first density. The method may also include depositing a second dielectric layer at least partially in the trench on the liner layer. The second dielectric layer may initially be flowable following the deposition, and have a second density that is less than the first density of the liner. The method may further include exposing the substrate to a dry etchant, where the etchant removes a portion of the first liner layer and the second dielectric layer to form a recess, where the dry etchant includes a fluorine-containing compound and molecular hydrogen, and where the etch rate ratio for removing the first dielectric liner layer to removing the second dielectric layer is about 1:1.2 to about 1:1.

公开(公告)号：US11321839B2

公开(公告)日：2022-05-03

申请号：US17028747

申请日：2020-09-22

Applicant: Applied Materials, Inc.

Inventor： Sumit Kumar Jha ,  Aditya Sista ,  Ganesh Kumar Mohanur Raghunathan ,  Ubhay Kumar ,  Kedar Sapre

IPC: G06K9/00 ,  G06T7/00 ,  G06T7/11 ,  G06K9/62 ,  G06V10/25

Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for training a machine learning model to segment magnified images of tissue samples. The method includes obtaining a magnified image of a tissue sample; processing an input comprising: the image, features derived from the image, or both, in accordance with current values of model parameters of a machine learning model to generate an automatic segmentation of the image into a plurality of tissue classes; providing, to a user through a user interface, an indication of: (i) the image, and (ii) the automatic segmentation of the image; determining an edited segmentation of the image, comprising applying modifications specified by the user to the automatic segmentation of the image; and determining updated values of the model parameters of the machine learning model based the edited segmentation of the image.

公开(公告)号：US20140273451A1

公开(公告)日：2014-09-18

申请号：US13914738

申请日：2013-06-11

Applicant: Applied Materials, Inc.

Inventor： Benjamin C. Wang ,  Amit Khandelwal ,  Avegerinos V. Gelatos ,  Joshua Collins ,  Kedar Sapre ,  Nitin K. Ingle

IPC: H01L21/285

CPC classification number: H01L21/76877 ,  C23C16/045 ,  C23C16/14 ,  C23C16/56 ,  H01L21/28556

Abstract: Methods of filling gaps with tungsten are described. The methods include a tungsten dep-etch-dep sequence to enhance gapfilling yet avoid difficulty in restarting deposition after the intervening etch. The first tungsten deposition may have a nucleation layer or seeding layer to assist growth of the first tungsten deposition. Restarting deposition with a less-than-conductive nucleation layer would impact function of an integrated circuit, and therefore avoiding tungsten “poisoning” during the etch is desirable. The etching step may be performed using a plasma to excite a halogen-containing precursor while the substrate at relatively low temperature (near room temperature or less). The plasma may be local or remote. Another method may be used in combination or separately and involves the introduction of a source of oxygen into the plasma in combination with the halogen-containing precursor.

Abstract translation: 描述了用钨填充间隙的方法。 这些方法包括用于增强间隙填充的钨去蚀刻 - 去除序列，但是避免在中间蚀刻之后重新开始沉积的困难。 第一钨沉积可以具有成核层或接种层以帮助第一钨沉积的生长。 用不太导电的成核层重新开始沉积将影响集成电路的功能，因此避免在蚀刻期间的钨“中毒”。 可以使用等离子体来进行蚀刻步骤，以在较低温度（接近室温或更低温度）的衬底下激发含卤素的前体。 等离子体可能是本地或远程的。 另一种方法可以组合使用或单独使用，并且涉及将氧源引入与含卤素前体组合的等离子体中。

公开(公告)号：US20130252440A1

公开(公告)日：2013-09-26

申请号：US13623792

申请日：2012-09-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Lei Luo ,  Shankar Venkataraman ,  Manuel A. Hernandez ,  Kedar Sapre ,  Zhong Qiang Hua

IPC: H01L21/02

CPC classification number: H01L21/0226 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/02362 ,  H01L21/76831 ,  H01L21/76898

Abstract: Methods of conformally depositing silicon oxide layers on patterned substrates are described. The patterned substrates are plasma treated such that subsequently deposited silicon oxide layers may deposit uniformly on walls of deep closed trenches. The technique is particularly useful for through-substrate vias (TSVs) which require especially deep trenches. The trenches may be closed at the bottom and deep to enable through-substrate vias (TSVs) by later removing a portion of the backside substrate (near to the closed end of the trench). The conformal silicon oxide layer thickness on the sidewalls near the bottom of a trench is greater than or about 70% of the conformal silicon oxide layer thickness near the top of the trench in embodiments of the invention. The improved uniformity of the silicon oxide layer enables a subsequently deposited conducting plug to be thicker and offer less electrical resistance.

Abstract translation: 描述了在图案化衬底上共形沉积氧化硅层的方法。 图案化的衬底被等离子体处理，使得随后沉积的氧化硅层可以均匀地沉积在深闭合的沟槽的壁上。 该技术对于需要特别深的沟槽的贯通衬底通孔（TSV）特别有用。 沟槽可以在底部和深处封闭，以便通过稍后去除背面衬底的一部分（靠近沟槽的封闭端）来实现贯穿衬底通孔（TSV）。 在本发明的实施方案中，靠近沟槽底部的侧壁上的共形氧化硅层厚度大于或接近沟槽顶部的共形氧化硅层厚度的约70％。 氧化硅层的改进的均匀性使得随后沉积的导电插头更厚并且提供更少的电阻。

公开(公告)号：US09012302B2

公开(公告)日：2015-04-21

申请号：US14484152

申请日：2014-09-11

Applicant: Applied Materials, Inc.

Inventor： Kedar Sapre ,  Nitin Ingle ,  Jing Tang

IPC: H01L21/76 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/3065 ,  H01L21/3081 ,  H01L21/76224

Abstract: A method of etching a recess in a semiconductor substrate is described. The method may include forming a dielectric liner layer in a trench of the substrate where the liner layer has a first density. The method may also include depositing a second dielectric layer at least partially in the trench on the liner layer. The second dielectric layer may initially be flowable following the deposition, and have a second density that is less than the first density of the liner. The method may further include exposing the substrate to a dry etchant, where the etchant removes a portion of the first liner layer and the second dielectric layer to form a recess, where the dry etchant includes a fluorine-containing compound and molecular hydrogen, and where the etch rate ratio for removing the first dielectric liner layer to removing the second dielectric layer is about 1:1.2 to about 1:1.