公开(公告)号：US11437284B2

公开(公告)日：2022-09-06

申请号：US16550784

申请日：2019-08-26

Applicant: Applied Materials, Inc.

Inventor： Wenhui Wang ,  Huixiong Dai ,  Christopher S. Ngai

IPC: H01L29/40 ,  H01L21/311 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/66

Abstract: Methods of forming and processing semiconductor devices which utilize a three-color hardmask process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts through the selective deposition of a fill material.

公开(公告)号：US10930556B2

公开(公告)日：2021-02-23

申请号：US16558711

申请日：2019-09-03

Applicant: Applied Materials, Inc.

Inventor： Wenhui Wang ,  Huixiong Dai ,  Christopher S. Ngai

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L21/033

Abstract: Methods of forming and processing semiconductor devices which utilize a three-color hardmask process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts utilizing selective deposition of masks in a three-color process.