公开(公告)号：US12020977B2

公开(公告)日：2024-06-25

申请号：US17688705

申请日：2022-03-07

Applicant: Applied Materials, Inc.

Inventor： Alexander Sulyman ,  Anwar Husain ,  Timothy Joseph Franklin ,  Carlaton Wong ,  Xue Yang Chang

IPC: H01L21/687 ,  H01L21/683

CPC classification number: H01L21/68742 ,  H01L21/6833 ,  H01L21/68785

Abstract: Methods and apparatus for lift pin assemblies for substrate processing chambers are provided. In some embodiments, a lift pin assembly includes a lift pin comprising a shaft, a head, and a coupling end, the head configured to rest against an electrostatic chuck; an upper guide comprising a top end, a bottom end, and a first opening extending from the top end to the bottom end, wherein the shaft is disposed and axially movable through the first opening; a lower guide comprising a top end, a bottom end, and a second opening and a third opening extending from the top end to the bottom end, wherein the third opening is larger than the second opening, and wherein the shaft is disposed and axially movable through the second opening and the third opening; and a biasing mechanism coupled to the shaft and configured to bias the lift pin against the electrostatic chuck.

公开(公告)号：US10381200B2

公开(公告)日：2019-08-13

申请号：US15453868

申请日：2017-03-08

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Yogananda Sarode Vishwanath ,  Xue Yang Chang

IPC: C23C16/06 ,  H01J37/32

Abstract: A method and apparatus for processing substrates in tandem processing regions of a plasma chamber is provided. In one example, the apparatus is embodied as a plasma chamber that includes a chamber body having a first chamber side with a first processing region and a second chamber side with a second processing region. The chamber body has a front wall and a bottom wall. A first chamber side port, a second chamber side port, and a vacuum port are disposed through the bottom wall. The vacuum port is at least part of an exhaust path for each of the processing regions. A vacuum house extends from the front wall and defines a second portion of the vacuum port. A substrate support is disposed in each of the processing regions, and a stem is coupled to each substrate support. Each stem extends through a chamber side port.