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公开(公告)号:US11560626B2
公开(公告)日:2023-01-24
申请号:US16876845
申请日:2020-05-18
发明人: Timothy Joseph Franklin , Adam Fischbach , Edward Haywood , Abhijit B. Mallick , Pramit Manna , Carlaton Wong , Stephen C. Garner , Eswaranand Venkatasubramanian
IPC分类号: C23C16/458 , H01J37/32 , C23C16/46 , C23C16/50 , C23C16/455 , H01L21/02 , H01L21/033
摘要: Embodiments of the present disclosure generally relate to apparatus and methods utilized in the manufacture of semiconductor devices. More particularly, embodiments of the present disclosure relate to a substrate processing chamber, and components thereof, for forming semiconductor devices.
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公开(公告)号:US11557466B2
公开(公告)日:2023-01-17
申请号:US16993759
申请日:2020-08-14
发明人: Samuel E. Gottheim , Abhijit B. Mallick , Pramit Manna , Eswaranand Venkatasubramanian , Timothy Joseph Franklin , Edward Haywood , Stephen C. Garner , Adam Fischbach
IPC分类号: C23C16/509 , H01J37/32
摘要: Embodiments described herein provide magnetic and electromagnetic housing systems and a method for controlling the properties of plasma generated in a process volume of a process chamber to affect deposition properties of a film. In one embodiment, the method includes rotation of the rotational magnetic housing about a center axis of the process volume to create dynamic magnetic fields. The magnetic fields modify the shape of the plasma, concentration of ions and radicals, and movement of concentration of ions and radicals to control the density profile of the plasma. Controlling the density profile of the plasma tunes the uniformity and properties of a deposited or etched film.
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公开(公告)号:US11189517B2
公开(公告)日:2021-11-30
申请号:US16791875
申请日:2020-02-14
IPC分类号: H01L21/683 , H01J37/32
摘要: Embodiments described herein relate to apparatus and methods for substantially reducing an occurrence of radio frequency (RF) coupling through a chucking electrode. The chucking electrode is disposed in an electrostatic chuck positioned on a substrate support. The substrate support is coupled to a process chamber body. An RF source is used to generate a plasma in a process volume adjacent to the substrate support. An impedance matching circuit is disposed between the RF source and the chucking electrode is disposed in the electrostatic chuck. An electrostatic chuck filter is coupled between the chucking electrode and the chucking power source.
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公开(公告)号:US12020977B2
公开(公告)日:2024-06-25
申请号:US17688705
申请日:2022-03-07
IPC分类号: H01L21/687 , H01L21/683
CPC分类号: H01L21/68742 , H01L21/6833 , H01L21/68785
摘要: Methods and apparatus for lift pin assemblies for substrate processing chambers are provided. In some embodiments, a lift pin assembly includes a lift pin comprising a shaft, a head, and a coupling end, the head configured to rest against an electrostatic chuck; an upper guide comprising a top end, a bottom end, and a first opening extending from the top end to the bottom end, wherein the shaft is disposed and axially movable through the first opening; a lower guide comprising a top end, a bottom end, and a second opening and a third opening extending from the top end to the bottom end, wherein the third opening is larger than the second opening, and wherein the shaft is disposed and axially movable through the second opening and the third opening; and a biasing mechanism coupled to the shaft and configured to bias the lift pin against the electrostatic chuck.
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公开(公告)号:US11992900B2
公开(公告)日:2024-05-28
申请号:US17090770
申请日:2020-11-05
IPC分类号: B23K26/388 , B23K26/0622 , H01L21/306 , H01L21/67
CPC分类号: B23K26/388 , H01L21/306 , H01L21/67207 , B23K26/0624
摘要: Embodiments of a method of forming one or more holes in a substrate for use as a process chamber component are provided herein. In some embodiments, a method of forming one or more holes in a substrate for use as a process chamber component include forming the one or more holes in the substrate with one or more laser drills using at least one of a percussion drilling, a trepanning, or an ablation process, wherein each of the one or more holes have an aspect ratio of about 1:1 to about 50:1, and wherein the substrate is a component for gas delivery or fluid delivery.
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公开(公告)号:US20230413446A1
公开(公告)日:2023-12-21
申请号:US18242629
申请日:2023-09-06
发明人: Phillip A. Criminale , Zhiqiang Guo , Andrew Myles , Martin Perez-Guzman , Nelson Joseph Gaspard , Timothy Joseph Franklin , Michael A. Stearns
CPC分类号: H05K1/183 , H01L22/34 , H05K2201/09027 , H05K2201/10037 , H05K2201/10098 , H05K2201/10151 , H05K2201/10159 , H01L21/68742
摘要: A method includes causing, by a computing system comprising at least one processing device, a diagnostic disc placed within a processing chamber to generate sensor data of at least one component of the processing chamber using a set of non-contact sensors of the diagnostic disc, receiving, by the computing system, the sensor data from the diagnostic disc via a wireless connection established between the computing system and the diagnostic disc, determining, by the computing system based on the sensor data, whether at least one of alignment concentricity is skewed with respect to the at least one component, and in response to determining that at least one of alignment or concentricity is skewed with respect to the at least one component, initiating, by the computing system, correction of at least one of alignment or concentricity of the at least one component.
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公开(公告)号:US11819948B2
公开(公告)日:2023-11-21
申请号:US17392248
申请日:2021-08-02
IPC分类号: B23K26/382
CPC分类号: B23K26/382
摘要: Embodiments of a method of forming one or more holes in a substrate for use as a process chamber component are provided herein. In some embodiments, a method of forming one or more holes in a substrate for use as a process chamber component include forming the one or more holes in the substrate with one or more laser drills using at least one of a percussion drilling, a trepanning, or an ablation process, wherein each of the one or more holes have an aspect ratio of about 1:1 to about 50:1, and wherein the substrate is a component for gas delivery or fluid delivery.
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公开(公告)号:US11508558B2
公开(公告)日:2022-11-22
申请号:US16834814
申请日:2020-03-30
摘要: Embodiments described herein generally related to a substrate processing apparatus, and more specifically to an improved showerhead assembly for a substrate processing apparatus. The showerhead assembly includes a chill plate, a gas plate, and a gas distribution plate having a top surface and a bottom surface. A plurality of protruded features contacts the top surface of the gas distribution plate. A fastener and an energy storage structure is provided on the protruded features. The energy storage structure is compressed by the fastener and axially loads at least one of the protruded features to compress the chill plate, the gas plate and the gas distribution plate.
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公开(公告)号:US12068137B2
公开(公告)日:2024-08-20
申请号:US17032220
申请日:2020-09-25
IPC分类号: H01J37/32 , C23C16/455 , F16K27/00 , H01L21/67
CPC分类号: H01J37/32568 , C23C16/45559 , F16K27/003 , H01J37/3244 , H01J37/3255 , H01L21/67017 , H01L21/6719 , H01J2237/334
摘要: A component for use in a substrate process chamber includes: a body having an opening extending partially through the body from a top surface of the body, wherein the opening includes a threaded portion for fastening the body to a second process chamber component, wherein the threaded portion includes a plurality of threads defining a plurality of rounded crests and a plurality of rounded roots, and wherein a depth of the threaded portion, being a radial distance between a rounded crest of the plurality of rounded crests and an adjacent root of the plurality of rounded roots, decreases from a first depth to a second depth at a last thread of the plurality of threads.
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公开(公告)号:US11959174B2
公开(公告)日:2024-04-16
申请号:US17131315
申请日:2020-12-22
发明人: Kallol Bera , Sathya Swaroop Ganta , Timothy Joseph Franklin , Kaushik Alayavalli , Akshay Dhanakshirur , Stephen C. Garner , Bhaskar Kumar
IPC分类号: C23C16/52 , C23C16/505 , C23C16/54 , H01J37/32
CPC分类号: C23C16/52 , C23C16/505 , C23C16/54 , H01J37/32082 , H01J37/32174 , H01J37/3266 , H01J37/32669
摘要: Embodiments described herein relate to magnetic and electromagnetic systems and a method for controlling the density profile of plasma generated in a process volume of a PECVD chamber to affect deposition profile of a film on a substrate and/or facilitate chamber cleaning after processing. In one embodiment, a system is disclosed that includes a rotational magnetic housing disposed about an exterior sidewall of a chamber. The rotational magnetic housing includes a plurality of magnets coupled to a sleeve that are configured to travel in a circular path when the rotational magnetic housing is rotated around the chamber, and a plurality of shunt doors movably disposed between the chamber and the sleeve, wherein each of the shunt doors are configured to move relative to the magnets.
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