PROCESS KIT ENCLOSURE SYSTEM
    6.
    发明申请

    公开(公告)号:US20200373190A1

    公开(公告)日:2020-11-26

    申请号:US16417348

    申请日:2019-05-20

    摘要: A process kit enclosure system includes surfaces to enclose an interior volume, a first support structure including first fins, a second support structure including second fins, and a front interface to interface the process kit enclosure system with a load port of a wafer processing system. The first and second fins are sized and spaced to hold process kit ring carriers and process kit rings in the interior volume. Each of the process kit rings is secured to one of the process kit ring carriers. The process kit enclosure system enables first automated transfer of a first process kit ring carrier securing a first process kit ring from the process kit enclosure system into the wafer processing system and second automated transfer of a second process kit ring carrier securing a second process kit ring from the wafer processing system into the process kit enclosure system.

    Plasma chamber with tandem processing regions

    公开(公告)号:US10381200B2

    公开(公告)日:2019-08-13

    申请号:US15453868

    申请日:2017-03-08

    IPC分类号: C23C16/06 H01J37/32

    摘要: A method and apparatus for processing substrates in tandem processing regions of a plasma chamber is provided. In one example, the apparatus is embodied as a plasma chamber that includes a chamber body having a first chamber side with a first processing region and a second chamber side with a second processing region. The chamber body has a front wall and a bottom wall. A first chamber side port, a second chamber side port, and a vacuum port are disposed through the bottom wall. The vacuum port is at least part of an exhaust path for each of the processing regions. A vacuum house extends from the front wall and defines a second portion of the vacuum port. A substrate support is disposed in each of the processing regions, and a stem is coupled to each substrate support. Each stem extends through a chamber side port.

    ICP SOURCE GAS DELIVERY HUB AND NOZZLE
    8.
    发明公开

    公开(公告)号:US20240351055A1

    公开(公告)日:2024-10-24

    申请号:US18206852

    申请日:2023-06-07

    摘要: Example structures, methods, and systems for additive manufacturing of a gas hub and delivery nozzle are disclosed. One example structure includes a unitary gas hub and distribution nozzle that includes a gas hub portion and a gas delivery nozzle portion. The gas hub portion includes multiple gas inlet paths and one or more plenum chambers. The multiple gas inlet paths and the one or more plenum chambers form fully recursive gas paths. Each of the one or more plenum chambers has one or more output holes. The gas delivery nozzle portion includes multiple gas flow paths, where each gas flow path is coupled to one of the one or more output holes in each of the one or more plenum chambers, and each gas flow path has a respective output at an outer surface of the gas delivery nozzle portion.

    ELECTRICAL BREAK FOR SUBSTRATE PROCESSING SYSTEMS

    公开(公告)号:US20240339302A1

    公开(公告)日:2024-10-10

    申请号:US18206456

    申请日:2023-06-06

    IPC分类号: H01J37/32 B33Y80/00

    摘要: Systems, methods, and apparatus including designs embodied in machine-readable media for a gas break used in semiconductor processing systems. The apparatus includes a gas break structure comprising an insulating material and having one or more gas flow paths formed within a body of the gas break structure, the gas break structure configured to provide a specified impedance when coupled between a grounded gas distribution manifold and an electrically charged gas delivery nozzle, the gas break structure further comprising an internal structure having a specified geometry comprising a repeating structure and one or more empty gaps between elements of the repeating structure. The gas break can be formed using additive manufacturing.

    Symmetric flow valve for higher flow conductance

    公开(公告)号:US11199267B2

    公开(公告)日:2021-12-14

    申请号:US16542798

    申请日:2019-08-16

    IPC分类号: F16K1/42 F16K1/36

    摘要: Embodiments of symmetric flow valves for use in a substrate processing chamber are provided herein. In some embodiments, a symmetric flow valve includes a valve body having sidewalls, a bottom plate, and a top plate that together define an interior volume, wherein the top plate includes one or more axisymmetrically disposed openings; a poppet disposed in the interior volume, wherein the poppet includes a central opening and a plurality of portions configured to selectively seal the one or more axisymmetrically disposed openings of the top plate when the symmetric flow valve is in a closed position; and a first actuator coupled to the poppet to position the poppet within the interior volume in at least an open position, where the poppet is spaced apart from the top plate to allow flow through the one or more axisymmetrically disposed openings of the top plate, and the closed position.