Deposition of SiN
    11.
    发明申请
    Deposition of SiN 审中-公开

    公开(公告)号:US20180068844A1

    公开(公告)日:2018-03-08

    申请号:US15706435

    申请日:2017-09-15

    Abstract: Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

    Shower plate structure for exhausting deposition inhibiting gas

    公开(公告)号:US10801106B2

    公开(公告)日:2020-10-13

    申请号:US15380557

    申请日:2016-12-15

    Abstract: A shower plate adapted to be installed in a plasma deposition apparatus including a gas inlet port, a shower head, a reaction chamber and an exhaust duct, the shower plate being adapted to be attached to the showerhead and having: a front surface adapted to face the gas inlet port; and a rear surface opposite to the front surface, wherein the shower plate has multiple apertures each extending from the front surface to the rear surface, and wherein the shower plate further has at least one aperture extending from the front surface side of the shower plate to the exhaust duct.

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