公开(公告)号：US20160079054A1

公开(公告)日：2016-03-17

申请号：US14855261

申请日：2015-09-15

申请人： ASM IP Holding B.V.

发明人： Shang Chen ,  Viljami Pore ,  Ryoko Yamada ,  Antti Juhani Niskanen

IPC分类号： H01L21/02

CPC分类号： H01L21/0228 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/0217 ,  H01L21/02274

摘要： Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

摘要翻译： 提供了形成氮化硅膜的方法和前体。 在一些实施例中，氮化硅可以通过原子层沉积（ALD）沉积，例如等离子体增强的ALD。 在一些实施例中，沉积的氮化硅可以用等离子体处理。 等离子体处理可以是氮等离子体处理。 在一些实施方案中，用于沉积氮化硅的硅前体包含碘配体。 当沉积到诸如FinFETS或其它类型的多栅极FET的三维结构上时，氮化硅膜可以具有相对均匀的垂直和水平部分的蚀刻速率。 在一些实施方案中，本公开的各种氮化硅膜具有小于具有稀释HF（0.5％）的热氧化物去除速率的一半的蚀刻速率。 在一些实施例中，沉积氮化硅膜的方法包括多步等离子体处理。

公开(公告)号：US10741386B2

公开(公告)日：2020-08-11

申请号：US16381634

申请日：2019-04-11

申请人： ASM IP Holding B.V.

发明人： Shang Chen ,  Viljami Pore ,  Ryoko Yamada ,  Antti Juhani Niskanen

IPC分类号： H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/455

摘要： Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

公开(公告)号：US09576792B2

公开(公告)日：2017-02-21

申请号：US14855261

申请日：2015-09-15

申请人： ASM IP Holding B.V.

发明人： Shang Chen ,  Viljami Pore ,  Ryoko Yamada ,  Antti Juhani Niskanen

IPC分类号： H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/455

CPC分类号： H01L21/0228 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/0217 ,  H01L21/02274

摘要： Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

摘要翻译： 提供了形成氮化硅膜的方法和前体。 在一些实施例中，氮化硅可以通过原子层沉积（ALD）沉积，例如等离子体增强的ALD。 在一些实施例中，沉积的氮化硅可以用等离子体处理。 等离子体处理可以是氮等离子体处理。 在一些实施方案中，用于沉积氮化硅的硅前体包含碘配体。 当沉积到诸如FinFETS或其它类型的多栅极FET的三维结构上时，氮化硅膜可以具有相对均匀的垂直和水平部分的蚀刻速率。 在一些实施方案中，本公开的各种氮化硅膜具有小于具有稀释HF（0.5％）的热氧化物去除速率的一半的蚀刻速率。 在一些实施例中，沉积氮化硅膜的方法包括多步等离子体处理。

公开(公告)号：US11367613B2

公开(公告)日：2022-06-21

申请号：US16987961

申请日：2020-08-07

申请人： ASM IP Holding B.V.

发明人： Shang Chen ,  Viljami Pore ,  Ryoko Yamada ,  Antti Juhani Niskanen

IPC分类号： H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/455

摘要： Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

公开(公告)号：US20190295838A1

公开(公告)日：2019-09-26

申请号：US16381634

申请日：2019-04-11

申请人： ASM IP Holding B.V.

发明人： Shang Chen ,  Viljami Pore ,  Ryoko Yamada ,  Antti Juhani Niskanen

IPC分类号： H01L21/02 ,  C23C16/455 ,  C23C16/04 ,  C23C16/34

摘要： Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

公开(公告)号：US10410857B2

公开(公告)日：2019-09-10

申请号：US14834290

申请日：2015-08-24

申请人： ASM IP Holding B.V.

发明人： Toshiya Suzuki ,  Viljami J. Pore ,  Shang Chen ,  Ryoko Yamada ,  Dai Ishikawa ,  Kunitoshi Namba

IPC分类号： H01L21/02

摘要： Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided. The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space. In some embodiments the silicon precursor is a silyl halide, such as H2SiI2. In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures. For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF.

公开(公告)号：US10262854B2

公开(公告)日：2019-04-16

申请号：US15706435

申请日：2017-09-15

申请人： ASM IP Holding B.V.

发明人： Shang Chen ,  Viljami Pore ,  Ryoko Yamada ,  Antti Juhani Niskanen

IPC分类号： H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/455

摘要： Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

公开(公告)号：US20170372886A1

公开(公告)日：2017-12-28

申请号：US15426593

申请日：2017-02-07

申请人： ASM IP Holding B.V.

发明人： Shang Chen ,  Viljami Pore ,  Ryoko Yamada ,  Antti Juhani Niskanen

IPC分类号： H01L21/02 ,  C23C16/455 ,  C23C16/34 ,  C23C16/04

摘要： Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment.

公开(公告)号：US11784043B2

公开(公告)日：2023-10-10

申请号：US17406919

申请日：2021-08-19

申请人： ASM IP Holding B.V.

发明人： Toshiya Suzuki ,  Viljami J. Pore ,  Shang Chen ,  Ryoko Yamada ,  Dai Ishikawa ,  Kunitoshi Namba

IPC分类号： H01L21/02

CPC分类号： H01L21/0228 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/02274

摘要： Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided. The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space. In some embodiments the silicon precursor is a silyl halide, such as H2SiI2. In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures. For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF.

公开(公告)号：US11133181B2

公开(公告)日：2021-09-28

申请号：US16543917

申请日：2019-08-19

申请人： ASM IP Holding B.V.

发明人： Toshiya Suzuki ,  Viljami J. Pore ,  Shang Chen ,  Ryoko Yamada ,  Dai Ishikawa ,  Kunitoshi Namba

IPC分类号： H01L21/02

摘要： Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided. The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space. In some embodiments the silicon precursor is a silyly halide, such as H2SiI2. In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures. For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF.