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公开(公告)号：US12131909B2
公开(公告)日：2024-10-29
申请号：US18485749
申请日：2023-10-12
IPC分类号： H01L21/285 , C23C16/04 , C23C16/06 , C23C16/455 , C23C16/505 , C23C16/52 , H01L21/02
CPC分类号： H01L21/28562 , C23C16/04 , C23C16/06 , C23C16/45534 , C23C16/45536 , C23C16/45544 , C23C16/505 , C23C16/52 , H01L21/0212 , H01L21/02175 , H01L21/02189 , H01L21/02274 , H01L21/0228
摘要： Selective deposition of a sacrificial material on a semiconductor substrate, the substrate having a surface with a plurality of regions of substrate materials having different selectivities for the sacrificial material, may be conducted such that substantial deposition of the sacrificial material occurs on a first region of the substrate surface, and no substantial deposition occurs on a second region of the substrate surface. Deposition of a non-sacrificial material may then be conducted on the substrate, such that substantial deposition of the non-sacrificial material occurs on the second region and no substantial deposition of the non-sacrificial material occurs on the first region. The sacrificial material may then be removed such that net deposition of the non-sacrificial material occurs substantially only on the second region.
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2.发明授权公开(公告)号：US12087562B2
公开(公告)日：2024-09-10
申请号：US17586002
申请日：2022-01-27
发明人： Kazushi Hikawa , Katsuhito Hirose
IPC分类号： H01J37/32 , C23C16/455 , C23C16/505 , H05H1/46
CPC分类号： H01J37/32935 , C23C16/45536 , C23C16/505 , H01J37/32082 , H05H1/4645
摘要： A substrate processing apparatus includes a radio-frequency power supply part configured to supply radio-frequency power for plasma generation to a processing container, and a monitoring part configured to detect an abnormality in the supply of the radio-frequency power to the processing container, wherein the monitoring part is configured to detect the abnormality in the supply of the radio-frequency power to the processing container based on a signal data obtained by sampling a signal propagating between the radio-frequency power supply part and the processing container at a sampling frequency higher than a frequency of the radio-frequency power.
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公开(公告)号：US12049699B2
公开(公告)日：2024-07-30
申请号：US17696276
申请日：2022-03-16
IPC分类号： C23C16/455 , C23C16/04 , C23C16/52 , H01J37/32 , H01L21/02 , H01L21/67 , H01L21/683 , H01L21/762 , H01L21/768
CPC分类号： C23C16/45536 , C23C16/045 , C23C16/45565 , H01J37/32091 , H01J37/32394 , H01L21/0228 , H01L21/67069 , H01L21/76224 , H01L21/76837 , C23C16/52 , H01J37/321 , H01J37/32357 , H01J37/32724 , H01L21/6833
摘要： A plasma generating system generates plasma in a processing chamber. A controller is configured to: a) perform atomic layer deposition (ALD) N times to deposit film in a feature of the substrate; b) after performing a) M of the N times, supply an inhibitor plasma gas to the processing chamber and strike plasma in the processing chamber to create a passivated surface more on upper portions of the feature as compared to lower portions of the feature to inhibit the atomic layer deposition in the upper portions of the feature as compared to the lower portions of the feature; c) supply an etch gas to the processing chamber to etch the film more in the upper portions of the feature than in the lower portions in the feature of the substrate following b); and d) repeat a) to c) one or more times to gapfill the feature without voids.
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公开(公告)号：US12049698B2
公开(公告)日：2024-07-30
申请号：US17737121
申请日：2022-05-05
IPC分类号： C23C16/44 , C23C16/455 , C23C16/50 , C23C16/505 , H01L21/02
CPC分类号： C23C16/4405 , C23C16/4408 , C23C16/4412 , C23C16/45536 , C23C16/50 , C23C16/505 , H01L21/02208 , H01L21/02274 , H01L21/0228
摘要： A method for reducing effluent buildup in a pumping exhaust system of a substrate processing system includes, during a substrate treatment process, arranging a substrate on a substrate support in a processing chamber; supplying one or more process gases to the processing chamber; supplying an inert dilution gas at a first flow rate to the pumping exhaust system; performing the substrate treatment process on the substrate in the processing chamber; evacuating reactants from the processing chamber using the pumping exhaust system. The method includes, after the substrate treatment process, supplying cleaning plasma including cleaning gas in the processing chamber during a cleaning process; and supplying the inert dilution gas at a second flow rate that is less than the first flow rate to the pumping exhaust system during the cleaning process.
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公开(公告)号：US20240247370A1
公开(公告)日：2024-07-25
申请号：US18099459
申请日：2023-01-20
发明人： Jeffrey W. Anthis , Nasrin Kazem , Lakmal Charidu Kalutarage , Jayden Stephen John Shackerley Potter , Thomas Joseph Knisley , Lisa Enman
IPC分类号： C23C16/40 , C23C16/455 , H01B1/08 , H01L21/285 , H01L33/42
CPC分类号： C23C16/40 , C23C16/45536 , C23C16/45553 , H01B1/08 , H01L21/28568 , H01L33/42 , H01L2933/0016
摘要： A method includes depositing a coating including stoichiometric one-to-one ruthenium oxide (RuO) onto a surface of a substrate. The coating is deposited by performing an atomic layer deposition (ALD) process using at least one precursor.
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公开(公告)号：US20240234130A1
公开(公告)日：2024-07-11
申请号：US18161045
申请日：2023-01-28
IPC分类号： H01L21/02 , C23C16/40 , C23C16/455 , C23C16/56
CPC分类号： H01L21/02274 , C23C16/401 , C23C16/45536 , C23C16/45553 , C23C16/56 , H01L21/0228
摘要： A method of fabricating an electronic device includes performing a plasma enhanced pretreatment process in a deposition chamber to pretreat a surface, performing a first plasma enhanced deposition process in the deposition chamber to deposit a first oxide of an oxide layer to a first thickness on the surface, performing an in situ first plasma enhanced treatment process in the deposition chamber to treat the first oxide of the oxide layer, performing one or more loop iterations of a second plasma enhanced deposition process in the deposition chamber to deposit a second or further oxide on the first oxide and increase the oxide layer thickness, and an in situ second plasma enhanced treatment process in the deposition chamber to treat the second or further oxide of the oxide layer.
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公开(公告)号：US12031210B2
公开(公告)日：2024-07-09
申请号：US16988217
申请日：2020-08-07
发明人： John S. Miller , Selim Elhadj , Thomas M. Spinka
IPC分类号： C23C16/455 , C23C16/40
CPC分类号： C23C16/45555 , C23C16/403 , C23C16/45536 , C23C16/45544 , C23C16/45553
摘要： A method is disclosed for doping a quantity of powder particles. A container having a central chamber is initially charged with a quantity of powder particles. A quantity of precursor is sublimed to form a heated precursor. A quantity of carrier gas is mixed with the precursor to form a mixture of heated precursor/carrier gas. The central chamber is charged with the heated precursor/carrier gas and then moved to cause interaction of the powder particles with the heated precursor/carrier gas to form a first monolayer coating on the powder particles. The heated precursor/carrier gas is then removed from the central chamber and the central chamber is charged with a O2/O3 gas under a plasma. The central chamber is then further moved to produce interaction of the O2/O3 gas with the first monolayer coating on the powder particles to modify the first monolayer coating to create a different, single monolayer coating forming an oxide coating on the powder particles.
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8.发明授权公开(公告)号：US12027362B2
公开(公告)日：2024-07-02
申请号：US17513055
申请日：2021-10-28
IPC分类号： H01L21/02 , C23C16/455 , C23C16/505
CPC分类号： H01L21/02164 , C23C16/45536 , C23C16/45563 , C23C16/505 , H01L21/02274
摘要： A method for manufacturing a semiconductor device using a plasma-enhanced atomic layer deposition is provided. A substrate comprising a silicon substrate and a first oxide layer is provided. Stacked structures are deposited on the substrate, which comprises a dielectric layer and a conductive layer. The stacked structures are etched to form at least one trench. A second oxide layer is deposited on the stacked structures and the trench using a plasma-enhanced atomic layer deposition apparatus includes a chamber, an upper electrode including nozzles, and a lower electrode. The upper electrode is connected to a first radio-frequency power device configured to generate plasma and a second radio-frequency power device configured to clean the nozzles. The lower electrode is connected to a third radio-frequency power device. A high resistance layer is deposited on the second oxide layer and a low resistance layer is deposited on the high resistance layer.
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公开(公告)号：US12020914B2
公开(公告)日：2024-06-25
申请号：US17075869
申请日：2020-10-21
发明人： Shota Yamazaki , Yuichi Takenaga
IPC分类号： H01J37/32 , C23C16/455 , C23C16/52 , G05B19/41 , G05B19/4155 , H01L21/67
CPC分类号： H01J37/32926 , C23C16/45536 , C23C16/45544 , C23C16/52 , G05B19/4155 , H01L21/67253 , G05B2219/45031 , H01J2237/332
摘要： An information processing device includes a storage configured to store a first film thickness model or a first refractive index model defining an amount of change in a film thickness or a refractive index at each position of a first wafer when a film forming processing is performed by changing an output of each of a plurality of plasma sources provided in a film forming device by a predetermined amount and a calculator configured to calculate, based on the first film thickness model or the first refractive index model, a correction value of the output of each of the plurality of plasma sources to achieve a target value of a film thickness or a target value of a refractive index at each position of a second wafer.
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10.发明公开公开(公告)号：US20240191346A1
公开(公告)日：2024-06-13
申请号：US18582396
申请日：2024-02-20
IPC分类号： C23C16/34 , B01J29/40 , C23C16/02 , C23C16/36 , C23C16/44 , C23C16/448 , C23C16/455
CPC分类号： C23C16/345 , B01J29/40 , C23C16/0254 , C23C16/36 , C23C16/4404 , C23C16/4488 , C23C16/45536 , C23C16/45553
摘要： Halidosilane compounds, processes for synthesizing halidosilane compounds, compositions comprising halidosilane precursors, and processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS). Also described herein are methods for depositing silicon containing films such as, without limitation, silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films, at one or more deposition temperatures of about 500° C. or less.
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