公开(公告)号：US20220068647A1

公开(公告)日：2022-03-03

申请号：US17460673

申请日：2021-08-30

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee ,  YeaHyun Gu ,  Hyunchul Kim ,  Naoki Inoue

IPC: H01L21/033 ,  H01J37/32 ,  C23C16/455

Abstract: Methods of forming patterned features on a surface of a substrate are disclosed. Exemplary methods include using a plasma-enhanced cyclical deposition process to form a transformable layer including a first material and exposing the transformable layer to energy to form a second material. The first or second material can be selectively etched relative to the other of the first and second material.

公开(公告)号：US20210407813A1

公开(公告)日：2021-12-30

申请号：US17358860

申请日：2021-06-25

Applicant: ASM IP Holding B.V.

Inventor： SeungHyun Lee ,  Hyunchul Kim ,  SeungWoo Choi ,  YeaHyun Gu

IPC: H01L21/3065 ,  H01J37/305 ,  H01L21/308

Abstract: A substrate processing method capable of improving etch selectivity without increasing the power includes: forming a first thin film on a structure; forming a material layer having wet etch resistance greater than that of the first thin film on the first thin film; removing a portion of the material layer using wet etching to expose a portion of the first thin film; and removing the exposed portion of the first thin film.