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    Method for trimming carbon-containing film at reduced trimming rate
    1.
    发明授权
    Method for trimming carbon-containing film at reduced trimming rate 有权
    降低修整速率的方法来修整含碳膜

    公开(公告)号：US09343308B2

    公开(公告)日：2016-05-17

    申请号：US14065114

    申请日：2013-10-28

    Applicant: ASM IP Holding B.V.

    Inventor： Yoshihiro Isii ,  Ryu Nakano ,  Naoki Inoue

    IPC: H01L21/311 ,  H01L21/027 ,  H01L21/033 ,  H01J37/32

    CPC classification number: H01L21/0273 ,  H01J37/32091 ,  H01J37/32146 ,  H01L21/0337 ,  H01L21/31138

    Abstract: A method for trimming a carbon-containing film includes: (i) providing a substrate having a carbon-containing film formed thereon; (ii) supplying a trimming gas and a rare gas to the reaction space, which trimming gas includes an oxygen-containing gas; and (iii) applying RF power between the electrodes to generate a plasma using the trimming gas and the rare gas and to thereby trim the carbon-containing film while controlling a trimming rate at 55 nm/min or less as a function of at least one parameter selected from the group consisting of a flow rate of an oxygen-containing gas, a flow rate of nitrogen-containing gas to be added to the oxygen-containing gas, pressure in the reaction space, RF power, a duty cycle of RF power, a distance between the electrodes, and a temperature of a susceptor on which the substrate is placed.

    Abstract translation: 一种修整含碳膜的方法包括：（i）提供其上形成有含碳膜的基材; （ii）向所述反应空间供给修整气体和稀有气体，所述修整气体包括含氧气体; 并且（iii）在电极之间施加RF功率以使用修整气体和稀有气体产生等离子体，并且由此修整含碳膜，同时以55nm / min以下的修整速率控制为至少一个 参数，选自含氧气体的流量，添加到含氧气体中的含氮气体的流量，反应空间中的压力，RF功率，RF功率的占空比 ，电极之间的距离以及放置基板的基座的温度。

    THIN FILM DEPOSITION PROCESS
    3.
    发明申请
    THIN FILM DEPOSITION PROCESS 有权

    公开(公告)号：US20220028678A1

    公开(公告)日：2022-01-27

    申请号：US17382349

    申请日：2021-07-22

    Applicant: ASM IP Holding B.V.

    Inventor： Naoki Inoue

    IPC: H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34 ,  C23C16/32

    Abstract: Provided is a thin film deposition process that allows high-precision control of the in-plane distribution of a thin film being deposited on a substrate. The process is a process of depositing a thin film on a substrate in a chamber by atomic layer deposition (ALD) which includes repeating a deposition cycle to deposit the thin film on the substrate. The deposition cycle includes the steps of: feeding a reactive gas and a carrier gas to the chamber and feeding a source gas at a reduced concentration to the chamber to allow the source gas to adsorb on the substrate; feeding the reactive gas and the source gas to the chamber to allow the source gas to adsorb on the substrate; feeding the reactive gas and the carrier gas to the chamber to purge, from the chamber, the source gas not adsorbing on the substrate; applying RF power to the chamber to turn the reactive gas into a plasma so that the source gas activated by the plasma is allowed to come into contact with a surface of the substrate; and feeding the reactive gas and the carrier gas to the chamber to purge, from the chamber, the source gas remaining unreacted and the reactive gas.

    Method for controlling in-plane uniformity of substrate processed by plasma-assisted process
    7.
    发明授权
    Method for controlling in-plane uniformity of substrate processed by plasma-assisted process 有权
    用于控制通过等离子体辅助工艺处理的衬底的面内均匀性的方法

    公开(公告)号：US09123510B2

    公开(公告)日：2015-09-01

    申请号：US13915732

    申请日：2013-06-12

    Applicant: ASM IP Holding B.V.

    Inventor： Ryu Nakano ,  Naoki Inoue

    IPC: C23C16/509 ,  H01J37/32 ,  C23C16/455 ,  C23C16/458

    CPC classification number: H01J37/32449 ,  C23C16/4551 ,  C23C16/45519 ,  C23C16/45536 ,  C23C16/4585 ,  C23C16/5096 ,  H01J37/32431

    Abstract: A method for controlling in-plane uniformity of a substrate processed by plasma-assisted process in a reactor, includes: supplying a principal gas to a reaction space, and discharging radially the principal gas from the reaction space through an annular duct; and supplying an secondary gas to the reaction space from an area in close proximity to an outer periphery of a susceptor, outside an outer circumference of the substrate as viewed from above, so as to flow at least partially in an inward direction passing the outer circumference of the substrate, reversing the direction of the secondary gas to flow toward the annular duct in a vicinity of the outer circumference of the substrate, and discharging radially the secondary gas together with the principal gas from the reaction space through the annular duct.

    Abstract translation: 一种用于控制在反应器中通过等离子体辅助工艺处理的衬底的面内均匀性的方法，包括：向反应空间供应主要气体，并通过环形管径向从反应空间排出主要气体; 以及从基座的外周附近的区域向反应空间供给二次气体，在从上方观察的基板的外周的外侧，至少部分地沿着通过外周的内侧流动 使基板的外周附近的二次气体的方向反向流向环状管道，并且使二次气体与来自反应空间的主要气体一起径向地通过环形管排出。

    Method For Trimming Carbon-Containing Film At Reduced Trimming Rate
    8.
    发明申请
    Method For Trimming Carbon-Containing Film At Reduced Trimming Rate 有权
    减少修剪率的修剪含碳膜的方法

    公开(公告)号：US20150118846A1

    公开(公告)日：2015-04-30

    申请号：US14065114

    申请日：2013-10-28

    Applicant: ASM IP Holding B.V.

    Inventor： Yoshihiro Isii ,  Ryu Nakano ,  Naoki Inoue

    IPC: H01L21/027 ,  H01L21/3065

    CPC classification number: H01L21/0273 ,  H01J37/32091 ,  H01J37/32146 ,  H01L21/0337 ,  H01L21/31138

    Abstract: A method for trimming a carbon-containing film includes: (i) providing a substrate having a carbon-containing film formed thereon; (ii) supplying a trimming gas and a rare gas to the reaction space, which trimming gas includes an oxygen-containing gas; and (iii) applying RF power between the electrodes to generate a plasma using the trimming gas and the rare gas and to thereby trim the carbon-containing film while controlling a trimming rate at 55 nm/min or less as a function of at least one parameter selected from the group consisting of a flow rate of an oxygen-containing gas, a flow rate of nitrogen-containing gas to be added to the oxygen-containing gas, pressure in the reaction space, RF power, a duty cycle of RF power, a distance between the electrodes, and a temperature of a susceptor on which the substrate is placed.

    Abstract translation: 一种修整含碳膜的方法包括：（i）提供其上形成有含碳膜的基材; （ii）向所述反应空间供给修整气体和稀有气体，所述修整气体包括含氧气体; 并且（iii）在电极之间施加RF功率以使用修整气体和稀有气体产生等离子体，并且由此修整含碳膜，同时以55nm / min以下的修整速率控制为至少一个 参数，选自含氧气体的流量，添加到含氧气体中的含氮气体的流量，反应空间中的压力，RF功率，RF功率的占空比 ，电极之间的距离以及放置基板的基座的温度。

    Method for controlling cyclic plasma-assisted process
    9.
    发明授权
    Method for controlling cyclic plasma-assisted process 有权
    控制循环等离子体辅助过程的方法

    公开(公告)号：US08790743B1

    公开(公告)日：2014-07-29

    申请号：US13784388

    申请日：2013-03-04

    Applicant: ASM IP Holding B.V.

    Inventor： Taku Omori ,  Naoki Inoue ,  Wataru Adachi

    IPC: C23C16/52

    CPC classification number: C23C16/52 ,  C23C16/45536 ,  H01J37/32146 ,  H01J37/32935 ,  H01J37/32981 ,  H01J37/3299

    Abstract: A method for processing a substrate in a reactor by pulsing RF power, includes: applying RF power in pulses in the reactor to process the substrate; monitoring data from the reactor indicative of anomalous pulses of RF power, including data from a photo sensor equipped in the reactor; counting the number of anomalous pulses of RF power in the monitored data; determining whether or not the number of anomalous pulses of RF power is acceptable; and initiating a pre-designated sequence if the number of anomalous pulses of RF power is determined to be unacceptable.

    Abstract translation: 一种用于通过脉冲RF功率来处理反应器中的衬底的方法，包括：在反应器中以脉冲施加RF功率以处理衬底; 监测来自反应堆的指示RF功率的异常脉冲的数据，包括来自安装在反应器中的光传感器的数据; 对监测数据中的RF功率的异常脉冲数进行计数; 确定RF功率的异常脉冲数是否可接受; 以及如果RF功率的异常脉冲数被确定为不可接受，则启动预定序列。

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