公开(公告)号：US20220018025A1

公开(公告)日：2022-01-20

申请号：US17376336

申请日：2021-07-15

Applicant: ASM IP Holding B.V.

Inventor： Paul Ma ,  Roghayyeh Lotfi ,  Jaebeom Lee ,  Eric Christopher Stevens ,  Charith Eranga Nanayakkara

IPC: C23C16/455 ,  C23C16/56 ,  C23C16/14 ,  C23C16/34 ,  C23C16/32 ,  C23C16/52

Abstract: Methods and systems for forming transition metal layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming a transition layer prior to forming the transition metal layer. The transition layer can be used to facilitate subsequent deposition of the transition metal layer on high aspect ratio features, while mitigating bending of the features during deposition of the transition metal layer.