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公开(公告)号：US20230349040A1
公开(公告)日：2023-11-02
申请号：US18141694
申请日：2023-05-01
申请人： ASM IP Holding B.V.
发明人： Moataz Bellah Mousa , Jiyeon Kim , Jaebeom Lee , Charith Eranga Nanayakkara , Paul Ma , Chuandao Wang , YoungChol Byun , Jacqueline Wrench , Guannan Chen
IPC分类号： C23C16/22 , C23C16/455 , C23C16/04 , C23C16/06
CPC分类号： C23C16/22 , C23C16/45525 , C23C16/045 , C23C16/06
摘要： A method and system for forming a structure are disclosed. An exemplary method includes providing a substrate comprising a plurality of gaps within a first reaction chamber, forming a doped adhesion film on the surface of a substrate and within the plurality of gaps, wherein the doped adhesion film comprises a first material and a second material, and depositing a metal overlying the doped adhesion film. Exemplary methods can further include a step of depositing a nucleation layer overlying the doped adhesion film. An exemplary system can perform the method of forming the structure.
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2.发明公开公开(公告)号：US20230343596A1
公开(公告)日：2023-10-26
申请号：US18135799
申请日：2023-04-18
申请人： ASM IP Holding B.V.
IPC分类号： H01L21/285 , H01L21/768
CPC分类号： H01L21/28568 , H01L21/76877
摘要： Methods for forming structures with reduced feature (e.g., line) bending are provided. Exemplary methods include using a cyclic deposition process, forming a layer comprising one or more of molybdenum, tungsten, and ruthenium, and providing a nitrogen-containing reactant to the reaction chamber to form a transient surface species. Use of the nitrogen-containing reactant is thought to mitigate metal interactions that are thought to contribute to feature bending.
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公开(公告)号：US11674220B2
公开(公告)日：2023-06-13
申请号：US17376238
申请日：2021-07-15
申请人： ASM IP Holding B.V.
发明人： Paul Ma , Roghayyeh Lotfi , Jaebeom Lee , Eric Christopher Stevens , Amit Mishra
IPC分类号： C23C16/06 , C23C16/455 , C23C28/00 , C23C16/30 , C23C16/32
CPC分类号： C23C16/06 , C23C16/303 , C23C16/305 , C23C16/32 , C23C16/45527 , C23C28/341
摘要： Methods for forming molybdenum layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming an underlayer prior to forming the molybdenum layer. The underlayer can be used to manipulate stress in the molybdenum layer and/or reduce a nucleation temperature and/or deposition temperature of a step of forming the molybdenum layer.
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公开(公告)号：US20240136224A1
公开(公告)日：2024-04-25
申请号：US18381232
申请日：2023-10-17
申请人： ASM IP Holding B.V.
发明人： YoungChol Byun , Holger Saare , Salvatore Luiso , Jaebeom Lee
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , H01L21/76843 , H01L21/76865 , H01L21/28568
摘要： Methods for filling a recessed feature on a substrate are disclosure. The methods may include, providing a substrate with a recessed feature including a metal liner layer, partially etching the metal liner, and subsequently filing the recessed feature with a gap-fill material employing a combination of etch and cyclical deposition processes. Semiconductor structures including a gap fill metal film disposed in a recessed featured are also disclosed.
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公开(公告)号：US20230279539A1
公开(公告)日：2023-09-07
申请号：US18142283
申请日：2023-05-02
申请人： ASM IP Holding B.V.
发明人： Paul Ma , Roghayyeh Lotfi , Jaebeom Lee , Eric Christopher Stevens , Amit Mishra
IPC分类号： C23C16/06 , C23C16/455 , C23C28/00 , C23C16/30 , C23C16/32
CPC分类号： C23C16/06 , C23C16/45527 , C23C28/341 , C23C16/303 , C23C16/305 , C23C16/32
摘要： Methods and systems for forming molybdenum layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming an underlayer prior to forming the molybdenum layer. The underlayer can be used to manipulate stress in the molybdenum layer and/or reduce a nucleation temperature and/or deposition temperature of a step of forming the molybdenum layer.
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公开(公告)号：US20240234205A9
公开(公告)日：2024-07-11
申请号：US18381232
申请日：2023-10-18
申请人： ASM IP Holding B.V.
发明人： YoungChol Byun , Holger Saare , Salvatore Luiso , Jaebeom Lee
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , H01L21/76843 , H01L21/76865 , H01L21/28568
摘要： Methods for filling a recessed feature on a substrate are disclosure. The methods may include, providing a substrate with a recessed feature including a metal liner layer, partially etching the metal liner, and subsequently filing the recessed feature with a gap-fill material employing a combination of etch and cyclical deposition processes. Semiconductor structures including a gap fill metal film disposed in a recessed featured are also disclosed.
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公开(公告)号：US20220018025A1
公开(公告)日：2022-01-20
申请号：US17376336
申请日：2021-07-15
申请人： ASM IP Holding B.V.
发明人： Paul Ma , Roghayyeh Lotfi , Jaebeom Lee , Eric Christopher Stevens , Charith Eranga Nanayakkara
摘要： Methods and systems for forming transition metal layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming a transition layer prior to forming the transition metal layer. The transition layer can be used to facilitate subsequent deposition of the transition metal layer on high aspect ratio features, while mitigating bending of the features during deposition of the transition metal layer.
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公开(公告)号：US20230163028A1
公开(公告)日：2023-05-25
申请号：US18148687
申请日：2022-12-30
申请人： ASM IP Holding B.V.
发明人： Salvatore Luiso , YoungChol Byun , Holger Saare , Jaebeom Lee , Sukanya Datta , Jiyeon Kim , Petri Raisanen , Dong Li , Eric James Shero , Yasiel Cabrera , Arul Vigneswar Ravichandran , Eric Christopher Stevens , Paul Ma
IPC分类号： H01L21/768 , C23C16/455 , C23C16/02
CPC分类号： H01L21/76879 , C23C16/0236 , C23C16/45553 , C23C16/06
摘要： Molybdenum (Mo) metal-on-metal (MoM) deposition methods for providing true bottom-up fill in vias and/or other gap features in device structures. These device structures contain metal at the bottom surface and have dielectric sidewalls. The deposition process provides molybdenum growth only, in some cases, on the metal film/layer to provide a selective process that can be called a metal-on-metal (MoM) process. The Mo MoM deposition process described herein are not limited to thin films (e.g., films less than 50 Å) and can be used to deposit thicker films (e.g., greater than 50 Å in some cases and greater than 200 Å in other useful cases) on metal surfaces while no, or substantially no, deposition is found on dielectric surfaces.
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公开(公告)号：US20220018016A1
公开(公告)日：2022-01-20
申请号：US17376238
申请日：2021-07-15
申请人： ASM IP Holding B.V.
发明人： Paul Ma , Roghayyeh Lotfi , Jaebeom Lee , Eric Christopher Stevens , Amit Mishra
IPC分类号： C23C16/06 , C23C16/455 , C23C16/32 , C23C16/30 , C23C28/00
摘要： Methods and systems for forming molybdenum layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming an underlayer prior to forming the molybdenum layer. The underlayer can be used to manipulate stress in the molybdenum layer and/or reduce a nucleation temperature and/or deposition temperature of a step of forming the molybdenum layer.
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