公开(公告)号：US11062996B2

公开(公告)日：2021-07-13

申请号：US16528336

申请日：2019-07-31

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hsing Kuo Tien ,  Chih Cheng Lee

IPC: H01L23/538 ,  H01L21/48 ,  H01L23/31

Abstract: A semiconductor device package includes a magnetically permeable layer having a top surface and a bottom surface opposite to the top surface. The semiconductor device package further includes a first conductive element in the magnetically permeable layer. The semiconductor device package further includes a first conductive via extending from the top surface of the magnetically permeable layer into the magnetically permeable layer to be electrically connected to the first conductive element. The first conductive via is separated from the magnetically permeable layer. A method of manufacturing a semiconductor device package is also disclosed.

公开(公告)号：US10332757B2

公开(公告)日：2019-06-25

申请号：US15824919

申请日：2017-11-28

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Yu-Lin Shih ,  Chih Cheng Lee

IPC: H01L23/49 ,  H01L25/00 ,  H01L21/48 ,  H01L23/498 ,  H01L23/00 ,  H01L25/065

Abstract: A semiconductor substrate includes a dielectric layer, a first patterned conductive layer and a first connection element. The dielectric layer has a first surface. The first patterned conductive layer has a first surface and is disposed adjacent to the first surface of the dielectric layer. The first connection element is disposed on the first surface of the first patterned conductive layer. The first connection element includes a first portion, a second portion and a seed layer disposed between the first portion and the second portion. The first portion of the first connection element and the first patterned conductive layer are formed to be a monolithic structure.