公开(公告)号：US06878609B2

公开(公告)日：2005-04-12

申请号：US10732272

申请日：2003-12-11

申请人： Akihisa Wanibe ,  Noriaki Okazawa ,  Yoshinao Miyata ,  Toshinao Shinbo ,  Tetsuya Akasu ,  Hisashi Akachi

发明人： Akihisa Wanibe ,  Noriaki Okazawa ,  Yoshinao Miyata ,  Toshinao Shinbo ,  Tetsuya Akasu ,  Hisashi Akachi

IPC分类号： H01L21/306 ,  B32B3/10 ,  B65D65/28 ,  G09F3/00 ,  H01L21/301 ,  H01L21/302 ,  H01L21/304 ,  H01L21/46 ,  H01L21/461 ,  H01L21/78

CPC分类号： H01L21/78 ,  H01L21/3043 ,  Y10T428/15 ,  Y10T428/21 ,  Y10T428/24273

摘要： In order to provide a silicon wafer break pattern that stabilizes the location and shape of the breaks at weak spots of the break pattern and that reduces waste, the through-holes of the break pattern is disposed along a scribe line, a first group of the through-holes are substantially disposed on only a first side of the scribe line, and a second group of the through-holes are substantially disposed on only a second side of the scribe line.

摘要翻译： 为了提供一种硅晶片断裂图案，其使断裂图案的弱点处的断裂位置和形状稳定并且减少浪费，断裂图案的通孔沿着划线设置，第一组 通孔仅基本上设置在划线的第一侧上，第二组通孔基本上仅设置在划线的第二侧。

公开(公告)号：US07320163B2

公开(公告)日：2008-01-22

申请号：US11076028

申请日：2005-03-10

申请人： Li Xin-Shan ,  Masami Murai ,  Toshinao Shinbo ,  Maki Ito

发明人： Li Xin-Shan ,  Masami Murai ,  Toshinao Shinbo ,  Maki Ito

IPC分类号： H01L41/08

CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1629 ,  B41J2/1632 ,  B41J2/1646 ,  B41J2002/14241 ,  H04R17/00 ,  Y10T29/42 ,  Y10T29/49401

摘要： A step of forming a vibration plate includes a step of forming an insulation film in order to cause the surface roughness Ra of the insulation film to be in the range of 1 nm to 3 nm: the insulation film being made of zirconia which has been obtained by depositing a zirconium layer, and accordingly by the thermally oxidizing the zirconium layer at a predetermined temperature, and the insulation film constituting the uppermost surface of the vibration plate. In addition, a step of forming a piezoelectric elements includes: a step of applying titanium (Ti) onto a lower electrode by use of a sputtering method, and of forming a seed titanium layer thereon; and a step of forming a piezoelectric precursor film by applying a piezoelectric material onto the seed titanium layer, and of forming a piezoelectric layer by baking, and crystallizing, the piezoelectric precursor layer.

摘要翻译： 形成振动板的步骤包括形成绝缘膜以使绝缘膜的表面粗糙度Ra在1nm至3nm的范围内的步骤：绝缘膜由已获得的氧化锆制成 通过沉积锆层，因此通过在预定温度下热氧化锆层，以及构成振动板最上表面的绝缘膜。 此外，形成压电元件的步骤包括：通过使用溅射法将钛（Ti）施加到下电极上并在其上形成晶种钛层的步骤; 以及通过将压电材料施加到种子钛层上形成压电前体膜的步骤，以及通过烘烤形成压电层并使压电前体层结晶的步骤。