Abstract:
Methods and apparatus for a sensor having non-ratiometric fault trip level setting. In embodiments, a sensor has a sensing element with a fixed gain. A signal processing module receives the fault trip level setting and maintains the fault trip level setting constant during changes in the supply voltage.
Abstract:
A magnetic field sensor comprises at least one magnetic field sensing element configured to generate a measured magnetic field signal responsive to an external magnetic field; a diagnostic circuit configured to generate a diagnostic signal, wherein the diagnostic signal is not dependent on a measured magnetic field; a signal path comprising an amplifier and an analog-to-digital converter for processing the measured magnetic field signal to generate a sensor output signal indicative of the external magnetic field during a measured time period and for processing the diagnostic signal during a diagnostic time period; and a switch coupled to receive the measured magnetic field signal and the diagnostic signal and direct the measured magnetic field signal to the signal path during the measured time period and direct the diagnostic signal to the signal path during the diagnostic time period.
Abstract:
A bandgap reference circuit includes a voltage reference circuit configured to generate a reference voltage at a first output and a proportional to absolute temperature (PTAT) current source configured to generate a PTAT current reference at a second output. A divider circuit is coupled to the reference voltage and configured to generate a divided reference voltage at a third output of the bandgap reference circuit. The bandgap reference circuit further includes a tunable current source coupled to the divider circuit and configured to generate a tunable current reference at a fourth output of the bandgap reference circuit based, at least in part, on the divider circuit. A method of generating a tunable current with a bandgap circuit is also provided.
Abstract:
An electronic circuit can be disposed upon a semiconductor substrate. An epitaxial layer can be disposed over the semiconductor substrate. The electronic circuit can include a Hall effect element, at least a portion of the Hall effect element disposed in the epitaxial layer. The electronic circuit can further include a current generator configured to generate a drive current that passes through the Hall effect element. The current generator can include a resistor disposed in the epitaxial layer and having characteristics such that a resistance of the resistor can vary with a stress of the semiconductor substrate, resulting in changes of the drive current, to compensate for variations in the sensitivity of the Hall effect element with the stress of the substrate.