BANDGAP REFERENCE CIRCUIT
    13.
    发明申请

    公开(公告)号:US20170269627A1

    公开(公告)日:2017-09-21

    申请号:US15071298

    申请日:2016-03-16

    Inventor: Aaron Cook

    CPC classification number: G05F3/267 G05F1/565 G05F1/575 G05F3/30

    Abstract: A bandgap reference circuit includes a voltage reference circuit configured to generate a reference voltage at a first output and a proportional to absolute temperature (PTAT) current source configured to generate a PTAT current reference at a second output. A divider circuit is coupled to the reference voltage and configured to generate a divided reference voltage at a third output of the bandgap reference circuit. The bandgap reference circuit further includes a tunable current source coupled to the divider circuit and configured to generate a tunable current reference at a fourth output of the bandgap reference circuit based, at least in part, on the divider circuit. A method of generating a tunable current with a bandgap circuit is also provided.

    Electronic Circuit For Driving A Hall Effect Element With A Current Compensated For Substrate Stress
    14.
    发明申请
    Electronic Circuit For Driving A Hall Effect Element With A Current Compensated For Substrate Stress 有权
    用于驱动霍尔效应元件的电子电路,用于补偿基板应力

    公开(公告)号:US20160299199A1

    公开(公告)日:2016-10-13

    申请号:US14681575

    申请日:2015-04-08

    Abstract: An electronic circuit can be disposed upon a semiconductor substrate. An epitaxial layer can be disposed over the semiconductor substrate. The electronic circuit can include a Hall effect element, at least a portion of the Hall effect element disposed in the epitaxial layer. The electronic circuit can further include a current generator configured to generate a drive current that passes through the Hall effect element. The current generator can include a resistor disposed in the epitaxial layer and having characteristics such that a resistance of the resistor can vary with a stress of the semiconductor substrate, resulting in changes of the drive current, to compensate for variations in the sensitivity of the Hall effect element with the stress of the substrate.

    Abstract translation: 电子电路可以设置在半导体衬底上。 可以在半导体衬底上设置外延层。 电子电路可以包括霍尔效应元件,霍尔效应元件的至少一部分设置在外延层中。 电子电路还可以包括配置成产生通过霍尔效应元件的驱动电流的电流发生器。 电流发生器可以包括设置在外延层中的电阻器,并且具有使得电阻器的电阻可以随着半导体衬底的应力而变化的特性,导致驱动电流的变化,以补偿霍尔的灵敏度的变化 效应元素与基底的应力。

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