公开(公告)号：US20210398853A1

公开(公告)日：2021-12-23

申请号：US16908537

申请日：2020-06-22

Applicant: Applied Materials, Inc.

Inventor： Karthik Balakrishnan ,  Jungrae Park ,  Zavier Zai Yeong Tan ,  Sai Abhinand ,  James S. Papanu

IPC: H01L21/78 ,  H01L21/027 ,  H01L21/3065

Abstract: Embodiments of the present disclosure include methods of determining scribing offsets in a hybrid laser scribing and plasma dicing process. In an embodiment, the method comprises forming a mask above a semiconductor wafer. In an embodiment, the semiconductor wafer comprises a plurality of dies separated from each other by streets. In an embodiment, the method further comprises patterning the mask and the semiconductor wafer with a laser scribing process. In an embodiment, the patterning provides openings in the streets. In an embodiment, the method further comprises removing the mask, and measuring scribing offsets of the openings relative to the streets.

公开(公告)号：US20180323095A1

公开(公告)日：2018-11-08

申请号：US15958327

申请日：2018-04-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Eng Sheng Peh ,  Karthik Balakrishnan ,  Sriskantharajah Thirunavukarasu

IPC: H01L21/67 ,  G06T7/00 ,  H01L21/677

Abstract: Methods and apparatus for detecting warpage in a substrate are provided herein. In some embodiments, a warpage detector for detecting warpage in substrates includes: one or more light sources to illuminate one or more substrates when present; a camera for capturing images of exposed portions of one or more substrates when present; a motion assembly having a mounting stage for supporting the camera; and a data acquisition interface (DAI) coupled to the camera to process substrate images and detect warpage of substrates based upon the processed substrate images.

公开(公告)号：US20220246476A1

公开(公告)日：2022-08-04

申请号：US17727571

申请日：2022-04-22

Applicant: Applied Materials, Inc.

Inventor： Karthik Balakrishnan ,  Jungrae Park ,  Sriskantharajah Thirunavukarasu ,  Eng Sheng Peh

IPC: H01L21/78 ,  H01L21/3065 ,  B23K26/53 ,  H01L21/67 ,  H01L21/308

Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with an actively-focused laser beam laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.