公开(公告)号：US20230040606A1

公开(公告)日：2023-02-09

申请号：US17879088

申请日：2022-08-02

Applicant: Applied Materials, Inc.

Inventor： Benjamin Colombeau ,  Saurabh Chopra ,  Myungsun Kim ,  Balasubramanian Pranatharthiharan

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/423

Abstract: Semiconductor devices and methods of manufacturing the same are described. The method includes forming a bottom dielectric isolation (BDI) layer on a substrate and depositing a template material in the source/drain trench. The template material is crystallized. Epitaxially growth of the source and drain regions then proceeds, which growth advantageously occurring on the bottom and sidewalls of the source and drain regions.

公开(公告)号：US20220037529A1

公开(公告)日：2022-02-03

申请号：US17386711

申请日：2021-07-28

Applicant: Applied Materials, Inc.

Inventor： Myungsun Kim ,  Michael Stolfi ,  Benjamin Colombeau ,  Andy Lo

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/15 ,  H01L21/8234 ,  H01L21/02

Abstract: Horizontal gate-all-around devices and methods of manufacturing the same are described. The hGAA devices comprise an oxidize layer on a semiconductor material between source regions and drain regions of the device. The method includes radical plasma oxidation (RPO) of semiconductor material layers between source regions and drain regions of an electronic device.