公开(公告)号：US20220037529A1

公开(公告)日：2022-02-03

申请号：US17386711

申请日：2021-07-28

Applicant: Applied Materials, Inc.

Inventor： Myungsun Kim ,  Michael Stolfi ,  Benjamin Colombeau ,  Andy Lo

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/15 ,  H01L21/8234 ,  H01L21/02

Abstract: Horizontal gate-all-around devices and methods of manufacturing the same are described. The hGAA devices comprise an oxidize layer on a semiconductor material between source regions and drain regions of the device. The method includes radical plasma oxidation (RPO) of semiconductor material layers between source regions and drain regions of an electronic device.

公开(公告)号：US12062708B2

公开(公告)日：2024-08-13

申请号：US17968068

申请日：2022-10-18

Applicant: Applied Materials, Inc.

Inventor： Michael Stolfi ,  Myungsun Kim ,  Benjamin Colombeau ,  Sanjay Natarajan

IPC: H01L29/66 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L29/66439 ,  H01L29/0673 ,  H01L29/42392 ,  H01L27/088

Abstract: Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise a trimmed semiconductor material between source regions and drain regions of the device. The method includes selectively isotropically etching semiconductor material layers between source regions and drain regions of an electronic device.

公开(公告)号：US20230039074A1

公开(公告)日：2023-02-09

申请号：US17968068

申请日：2022-10-18

Applicant: Applied Materials, Inc.

Inventor： Michael Stolfi ,  Myungsun Kim ,  Benjamin Colombeau ,  Sanjay Natarajan

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/423

Abstract: Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise a trimmed semiconductor material between source regions and drain regions of the device. The method includes selectively isotropically etching semiconductor material layers between source regions and drain regions of an electronic device.

公开(公告)号：US20220123123A1

公开(公告)日：2022-04-21

申请号：US17498098

申请日：2021-10-11

Applicant: Applied Materials, Inc.

Inventor： Myungsun Kim ,  Andy Lo ,  Eric Davey ,  Michael Stolfi ,  Benjamin Colombeau

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/786 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/306 ,  H01L29/66

Abstract: Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise an oxide layer and a semiconductor material layer between source regions and drain regions of the device. The method includes growing a conformal epitaxial layer on a nanosheet channel layer, followed by radical plasma oxidation (RPO) to oxidize the conformal epitaxial layer. An alternative method includes growing a conformal epitaxial layer on a nanosheet channel layer, followed by a surface treatment, and then radical plasma oxidation (RPO) to oxidize the conformal epitaxial layer.

公开(公告)号：US11508828B2

公开(公告)日：2022-11-22

申请号：US17354251

申请日：2021-06-22

Applicant: Applied Materials, Inc.

Inventor： Michael Stolfi ,  Myungsun Kim ,  Benjamin Colombeau ,  Sanjay Natarajan

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L27/088

Abstract: Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise a trimmed semiconductor material between source regions and drain regions of the device. The method includes selectively isotropically etching semiconductor material layers between source regions and drain regions of an electronic device.

公开(公告)号：US20220037147A1

公开(公告)日：2022-02-03

申请号：US17386724

申请日：2021-07-28

Applicant: Applied Materials, Inc.

Inventor： Myungsun Kim ,  Jingmei Liang ,  Martin J. Seamons ,  Michael Stolfi ,  Benjamin Colombeau

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/311 ,  H01L27/12

Abstract: Provided are methods of depositing a film in high aspect ratio (AR) structures with small dimensions. The method provides flowable deposition for seamless gap-fill, film densification by low temperature inductively coupled plasma (ICP) treatment (

公开(公告)号：US12243941B2

公开(公告)日：2025-03-04

申请号：US17386711

申请日：2021-07-28

Applicant: Applied Materials, Inc.

Inventor： Myungsun Kim ,  Michael Stolfi ,  Benjamin Colombeau ,  Andy Lo

IPC: H01L29/78 ,  H01L21/02 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/15 ,  H01L29/16 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66

Abstract: Horizontal gate-all-around devices and methods of manufacturing the same are described. The hGAA devices comprise an oxidize layer on a semiconductor material between source regions and drain regions of the device. The method includes radical plasma oxidation (RPO) of semiconductor material layers between source regions and drain regions of an electronic device.

公开(公告)号：US20220005937A1

公开(公告)日：2022-01-06

申请号：US17354251

申请日：2021-06-22

Applicant: Applied Materials, Inc.

Inventor： Michael Stolfi ,  Myungsun Kim ,  Benjamin Colombeau ,  Sanjay Natarajan

IPC: H01L29/66 ,  H01L29/423 ,  H01L29/06

Abstract: Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise a trimmed semiconductor material between source regions and drain regions of the device. The method includes selectively isotropically etching semiconductor material layers between source regions and drain regions of an electronic device.

公开(公告)号：US20190212656A1

公开(公告)日：2019-07-11

申请号：US16244381

申请日：2019-01-10

Applicant: Applied Materials, Inc. ,  International Business Machines Corporation

Inventor： Huixiong Dai ,  Weimin Zeng ,  Daniel Lee Diehl ,  Yong Cao ,  Hsiang Ning Wu ,  Khoi Phan ,  Christopher S. Ngai ,  Mingwei Zhu ,  Michael Stolfi ,  Nelson M. Felix ,  Ekmini Anuja DeSilva ,  Xianmin Tang

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70058 ,  G03F7/0035 ,  G03F7/2022 ,  G03F7/70033

Abstract: Methods for depositing an EUV hardmask film on a substrate by physical vapor deposition which allow for reduced EUV dose. Certain embodiments relate to metal oxide hardmasks which require smaller amounts of EUV energy for processing and allow for higher throughput. A silicon or metal target can be sputtered onto a substrate in the presence of an oxygen and or doping gas containing plasma.