公开(公告)号：US09377692B2

公开(公告)日：2016-06-28

申请号：US14301184

申请日：2014-06-10

Applicant: Applied Materials, Inc.

Inventor： Peng Xie ,  Ludovic Godet ,  Tristan Ma ,  Joseph C. Olson ,  Christopher Bencher

IPC: G03F7/20 ,  G03F7/38 ,  B82Y10/00

CPC classification number: G03F7/38 ,  B82Y10/00 ,  G03F7/20 ,  G03F7/26 ,  G03F7/70

Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid generated by a photoacid generator during a lithography process contributes to line edge/width roughness. Methods disclosed herein apply an electric field and/or a magnetic field during photolithography processes. The field application controls the diffusion of the acids generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. Apparatuses for carrying out the aforementioned methods are also disclosed herein.

Abstract translation: 提供了通过光刻形成的线中的线边缘/宽度粗糙度最小化的方法和装置。 在光刻过程中由光致酸发生器产生的酸的随机扩散有助于线边缘/宽度粗糙度。 本文公开的方法在光刻工艺期间施加电场和/或磁场。 场应用控制由光致酸发生器沿线和间隔方向产生的酸的扩散，防止由随机扩散引起的线边缘/宽度粗糙度。 用于实施上述方法的装置也在此公开。

公开(公告)号：US20140263172A1

公开(公告)日：2014-09-18

申请号：US14205324

申请日：2014-03-11

Applicant: Applied Materials, Inc.

Inventor： Peng Xie ,  Christopher Dennis Bencher ,  Huixiong Dai ,  Timothy Michaelson ,  Subhash Deshmukh

IPC: G03F7/36

CPC classification number: H01L21/67069 ,  C23C16/45544 ,  G03F7/36 ,  G03F7/405 ,  H01L21/67167 ,  H01L21/67201 ,  H01L21/68707

Abstract: In some embodiments, a method of forming an etch mask on a substrate is provided that includes (1) forming a resist layer on a substrate; (2) exposing one or more regions of the resist layer to an energy source so as to alter at least one of a physical property and a chemical property of the exposed regions; (3) performing a hardening process on the resist layer to increase the etch resistance of first regions of the resist layer relative to second regions of the resist layer, the hardening process including exposing the resist layer to one or more reactive species within an atomic layer deposition (ALD) chamber; and (4) dry etching the resist layer to remove the one or more second regions and to form a pattern in the resist layer. Other embodiments are provided.

Abstract translation: 在一些实施例中，提供了在衬底上形成蚀刻掩模的方法，其包括（1）在衬底上形成抗蚀剂层; （2）将抗蚀剂层的一个或多个区域暴露于能量源，以便改变暴露区域的物理性质和化学性质中的至少一个; （3）对抗蚀剂层进行硬化处理以提高抗蚀剂层相对于抗蚀剂层的第二区域的第一区域的耐蚀刻性，硬化过程包括将抗蚀剂层暴露于原子层内的一个或多个反应性物质 沉积（ALD）室; 和（4）干蚀刻抗蚀剂层以除去一个或多个第二区域并在抗蚀剂层中形成图案。 提供其他实施例。