公开(公告)号：US20100196251A1

公开(公告)日：2010-08-05

申请号：US12665265

申请日：2008-05-19

申请人： Takaaki Shibayama ,  Atsushi Ryokawa ,  Shuhei Yamada

发明人： Takaaki Shibayama ,  Atsushi Ryokawa ,  Shuhei Yamada

IPC分类号： C01B7/24

CPC分类号： C01B7/24

摘要： [Task] To provide, in an industrial scale production of iodine heptafluoride, a method for producing it easily and continuously, with a single reactor, efficiently and stably by putting iodine and fluorine directly into the reactor.[Solving Means] To provide a method for producing iodine heptafluoride, characterized in that each of a fluorine-containing gas and an iodine-containing gas is supplied to a reactor, in which iodine heptafluoride is previously present, in order to suppress a local reaction when iodine and fluorine as the raw materials are put into the reactor, and the reaction is conducted while circulating and mixing the gas in the reactor.[Selected Drawing] None

摘要翻译： [任务]为了提供以工业规模生产七氟化碘的方法，通过将碘和氟直接放入反应器中，通过单个反应器容易连续地生产方法。 本发明提供一种生产七氟化碘的方法，其特征在于，向预先存在七氟化碘的反应器中供给含氟气体和含碘气体，以抑制局部反应 当将碘和氟作为原料放入反应器中时，在反应器中循环和混合气体的同时进行反应。 [已选图]无

公开(公告)号：US06770253B2

公开(公告)日：2004-08-03

申请号：US10238041

申请日：2002-09-10

申请人： Shinsuke Nakagawa ,  Takaaki Shibayama ,  Atsushi Ryokawa ,  Hisakazu Itoh

发明人： Shinsuke Nakagawa ,  Takaaki Shibayama ,  Atsushi Ryokawa ,  Hisakazu Itoh

IPC分类号： C01B3308

CPC分类号： C01B33/10705

摘要： A process for producing silicon tetrafluoride includes reacting at 250° C. or higher elemental silicon with hydrogen fluoride, thereby producing a gas product containing silicon tetrafluoride. This reaction can be conducted such that the gas product contains at least 0.02 volume % of the unreacted hydrogen fluoride. The process may further include bringing the gas product into contact with elemental nickel at a temperature of 600° C. or higher. Alternatively, the process may further include adding at least 0.1 volume % of hydrogen fluoride to the gas product to prepare a gas mixture; and bringing the gas mixture into contact with elemental nickel at a temperature of 400° C. or higher.

摘要翻译： 制造四氟化硅的方法包括在250℃或更高的元素硅与氟化氢反应，从而产生含有四氟化硅的气体产物。 该反应可以进行，使得气体产物含有至少0.02体积％的未反应氟化氢。 该方法还可以包括使气体产物在600℃或更高的温度下与元素镍接触。 或者，该方法还可以包括向气体产物中加入至少0.1体积％的氟化氢以制备气体混合物; 并在400℃或更高的温度下使气体混合物与元素镍接触。