Method for production of iodine heptafluoride
    1.
    发明授权
    Method for production of iodine heptafluoride 有权
    七氟化碘生产方法

    公开(公告)号:US07976817B2

    公开(公告)日:2011-07-12

    申请号:US12665265

    申请日:2008-05-19

    IPC分类号: C01B7/24

    CPC分类号: C01B7/24

    摘要: To provide, in an industrial scale production of iodine heptafluoride, a method for producing it easily and continuously, with a single reactor, efficiently and stably by putting iodine and fluorine directly into the reactor. To provide a method for producing iodine heptafluoride, characterized in that each of a fluorine-containing gas and an iodine-containing gas is supplied to a reactor, in which iodine heptafluoride is previously present, in order to suppress a local reaction when iodine and fluorine as the raw materials are put into the reactor, and the reaction is conducted while circulating and mixing the gas in the reactor.

    摘要翻译: 为了以工业规模生产七氟化碘,通过将碘和氟直接放入反应器中,通过单个反应器有效和稳定地提供容易连续生产的方法。 提供一种生产七氟化碘的方法,其特征在于,将含有氟的含氟气体和含碘气体分别供给到预先存在七氟化氢的反应器中,以便当碘和氟 因为原料放入反应器中,并且在反应器中循环和混合气体的同时进行反应。

    Method for Production of Iodine Heptafluoride
    2.
    发明申请
    Method for Production of Iodine Heptafluoride 有权
    碘化七氟化硫的生产方法

    公开(公告)号:US20100196251A1

    公开(公告)日:2010-08-05

    申请号:US12665265

    申请日:2008-05-19

    IPC分类号: C01B7/24

    CPC分类号: C01B7/24

    摘要: [Task] To provide, in an industrial scale production of iodine heptafluoride, a method for producing it easily and continuously, with a single reactor, efficiently and stably by putting iodine and fluorine directly into the reactor.[Solving Means] To provide a method for producing iodine heptafluoride, characterized in that each of a fluorine-containing gas and an iodine-containing gas is supplied to a reactor, in which iodine heptafluoride is previously present, in order to suppress a local reaction when iodine and fluorine as the raw materials are put into the reactor, and the reaction is conducted while circulating and mixing the gas in the reactor.[Selected Drawing] None

    摘要翻译: [任务]为了提供以工业规模生产七氟化碘的方法,通过将碘和氟直接放入反应器中,通过单个反应器容易连续地生产方法。 本发明提供一种生产七氟化碘的方法,其特征在于,向预先存在七氟化碘的反应器中供给含氟气体和含碘气体,以抑制局部反应 当将碘和氟作为原料放入反应器中时,在反应器中循环和混合气体的同时进行反应。 [已选图]无

    Process for producing silicon tetrafluoride
    3.
    发明授权
    Process for producing silicon tetrafluoride 失效
    生产四氟化硅的方法

    公开(公告)号:US06770253B2

    公开(公告)日:2004-08-03

    申请号:US10238041

    申请日:2002-09-10

    IPC分类号: C01B3308

    CPC分类号: C01B33/10705

    摘要: A process for producing silicon tetrafluoride includes reacting at 250° C. or higher elemental silicon with hydrogen fluoride, thereby producing a gas product containing silicon tetrafluoride. This reaction can be conducted such that the gas product contains at least 0.02 volume % of the unreacted hydrogen fluoride. The process may further include bringing the gas product into contact with elemental nickel at a temperature of 600° C. or higher. Alternatively, the process may further include adding at least 0.1 volume % of hydrogen fluoride to the gas product to prepare a gas mixture; and bringing the gas mixture into contact with elemental nickel at a temperature of 400° C. or higher.

    摘要翻译: 制造四氟化硅的方法包括在250℃或更高的元素硅与氟化氢反应,从而产生含有四氟化硅的气体产物。 该反应可以进行,使得气体产物含有至少0.02体积%的未反应氟化氢。 该方法还可以包括使气体产物在600℃或更高的温度下与元素镍接触。 或者,该方法还可以包括向气体产物中加入至少0.1体积%的氟化氢以制备气体混合物; 并在400℃或更高的温度下使气体混合物与元素镍接触。

    Process for producing high-purity hafnium amide
    4.
    发明授权
    Process for producing high-purity hafnium amide 有权
    生产高纯度铪酰胺的方法

    公开(公告)号:US07319158B2

    公开(公告)日:2008-01-15

    申请号:US11705524

    申请日:2007-02-13

    IPC分类号: C07F7/00

    CPC分类号: C07C209/84 C07C211/65

    摘要: A process for producing a high-purity hafnium amide includes the steps of (a) adding a compound which contains a carbonyl group or sulfonyl group and is represented by the formula of A(OyXOnRf)m (e.g., CF3SO3H, Hf(CF3SO3)4, (CF3SO2)2O, CF3CO2H, CH3SO3H, C6H5SO3H, and (CH3SO2)2O), to a crude hafnium amide which is represented by the formula of Hf[N(R1)(R2)]4, where each of R1 and R2 independently represents a methyl group or ethyl group, and which contains a zirconium component as an impurity; and (b) subjecting a product of the step (a) to a distillation under reduced pressure, thereby removing the zirconium component from the crude hafnium amide.

    摘要翻译: 一种制备高纯度铪酰胺的方法包括以下步骤:(a)加入含有羰基或磺酰基的化合物,并由下式表示:A(O)y X (例如,CF 3 SO 3 H,Hf(CF 3)3) 4(3)3(3)3)3,3(3)SO 2 2 O,CF 3 CO 2 H,CH 3 SO 3 H,C 3 H 3, 6 H 5 SO 3 H,和(CH 3 SO 2)2 对于由Hf [N(R 1')(R 2')] 4表示的粗制铪酰胺, / SUB>,其中R 1和R 2各自独立地表示甲基或乙基,并且其含有作为杂质的锆组分; 和(b)将步骤(a)的产物在减压下进行蒸馏,从而从粗铪酰胺中除去锆组分。

    Processes for producing hafnium complexes
    5.
    发明授权
    Processes for producing hafnium complexes 有权
    生产铪配合物的方法

    公开(公告)号:US07518008B2

    公开(公告)日:2009-04-14

    申请号:US12142223

    申请日:2008-06-19

    IPC分类号: C07F7/00 C07C49/92

    摘要: Disclosed are first to sixth processes for respectively producing hafnium tetra-tertiary-butoxide, tetrakis(acetylacetonato)hafnium, tetrakis(1-methoxy-2-methyl-2-propanolato)hafnium, hafnium tetra-tertiary-amyloxide, tetrakis(3-methyl-3-pentoxy)hafnium, and tetrakis(hexafluoroacetylacetonato)hafnium. The first process includes the steps of (a) adding a compound A(OyXOnRf)m (e.g., CF3SO3H) to a crude hafnium amide Hf[N(R1)(R2)]4; (b) subjecting a product of the step (a) to a distillation under reduced pressure; (c) adding a lithium alkylamide Li(NR3R4) to a fraction obtained by the step (b); (d) subjecting a product of the step (c) to a distillation under reduced pressure; (e) adding tertiary butanol to a fraction obtained by the step (d); and (f) subjecting a product of the step (e) to a distillation under reduced pressure. The tertiary butanol of the step (e) is replaced with acetylacetone, 1-methoxy-2-methyl-2-propanol, tertiary amyl alcohol, 3-methyl-3-pentanol, and hexafluoroacetylacetone in the second to six processes, respectively.

    摘要翻译: 公开了分别生产四 - 叔丁醇铪,四(乙酰丙酮)铪,四(1-甲氧基-2-甲基-2-丙醇)铪,四 - 叔 - 淀粉铪,四(3-甲基) -3-戊氧基)铪和四(六氟乙酰丙酮)铪。 第一种方法包括以下步骤:(a)向粗铪酰胺Hf [N(R1)(R2)] 4中加入化合物A(OyXOnRf)m(例如CF 3 SO 3 H) (b)将步骤(a)的产物在减压下进行蒸馏; (c)将烷基酰胺锂(NR 3 R 4)加入到通过步骤(b)获得的级分中; (d)将步骤(c)的产物在减压下进行蒸馏; (e)向步骤(d)获得的馏分中加入叔丁醇; 和(f)将步骤(e)的产物在减压下进行蒸馏。 步骤(e)的叔丁醇分别在第二至六个方法中被乙酰丙酮,1-甲氧基-2-甲基-2-丙醇,叔戊醇,3-甲基-3-戊醇和六氟乙酰丙酮代替。

    Process for producing high-purity hafnium amide
    6.
    发明申请
    Process for producing high-purity hafnium amide 有权
    生产高纯度铪酰胺的方法

    公开(公告)号:US20070197809A1

    公开(公告)日:2007-08-23

    申请号:US11705524

    申请日:2007-02-13

    IPC分类号: C07F7/28

    CPC分类号: C07C209/84 C07C211/65

    摘要: A process for producing a high-purity hafnium amide includes the steps of (a) adding a compound which contains a carbonyl group or sulfonyl group and is represented by the formula of A(OyXOnRf)m (e.g., CF3SO3H, Hf(CF3SO3)4, (CF3SO2)2O, CF3CO2H, CH3SO3H, C6H5SO3H, and (CH3SO2)2O), to a crude hafnium amide which is represented by the formula of Hf[N(R1)(R2)]4, where each of R1 and R2 independently represents a methyl group or ethyl group, and which contains a zirconium component as an impurity; and (b) subjecting a product of the step (a) to a distillation under reduced pressure, thereby removing the zirconium component from the crude hafnium amide.

    摘要翻译: 一种制备高纯度铪酰胺的方法包括以下步骤:(a)加入含有羰基或磺酰基的化合物,并由下式表示:A(O)y X (例如,CF 3 SO 3 H,Hf(CF 3)3) 4(3)3(3)3)3,3(3)SO 2 2 O,CF 3 CO 2 H,CH 3 SO 3 H,C 3 H 3, 6 H 5 SO 3 H,和(CH 3 SO 2)2 对于由Hf [N(R 1')(R 2')] 4表示的粗制铪酰胺, / SUB>,其中R 1和R 2各自独立地表示甲基或乙基,并且其含有作为杂质的锆组分; 和(b)将步骤(a)的产物在减压下进行蒸馏,从而从粗铪酰胺中除去锆组分。

    Chemical for Forming Protective Film
    7.
    发明申请
    Chemical for Forming Protective Film 有权
    化学成型保护膜

    公开(公告)号:US20130056023A1

    公开(公告)日:2013-03-07

    申请号:US13698244

    申请日:2011-05-11

    IPC分类号: C09K3/18 B08B3/10

    摘要: Disclosed is a liquid chemical for forming a water repellent protective film on a wafer that has at its surface a finely uneven pattern and contains silicon element at least at a part of the uneven pattern, the water repellent protective film being formed at least on surfaces of recessed portions of the uneven pattern at the time of cleaning the wafer. The liquid chemical contains: a silicon compound (A) represented by the general formula R1aSi(H)b(X)4−a−b and an acid; or a silicon compound (C) represented by the general formula R7gSi(H)h(CH3)w(Z)4−g−h−w and a base that contains no more than 35 mass % of water. The total amount of water in the liquid chemical is no greater than 1000 mass ppm relative to the total amount of the liquid chemical. The liquid chemical can improve a cleaning step that easily induces pattern collapse.

    摘要翻译: 公开了一种用于在晶片上形成疏水性保护膜的液体化学品,其表面具有精细不均匀的图案,并且至少在不均匀图案的一部分处含有硅元素,所述防水保护膜至少形成在 在清洁晶片时凹凸图案的凹陷部分。 液体化学品包含:由通式R 1a a(H)b(X)4-a-b表示的硅化合物(A)和酸; 或由通式R7gSi(H)h(CH3)w(Z)4-g-h-w表示的硅化合物(C)和含有不超过35质量%的水的碱。 液体化学品中的水的总量相对于液体化学品的总量不超过1000质量ppm。 液体化学品可以改善易于引起图案塌陷的清洁步骤。

    Hafnium Amide Complex Manufacturing Method and Hafnium-Containing Oxide Film
    8.
    发明申请
    Hafnium Amide Complex Manufacturing Method and Hafnium-Containing Oxide Film 有权
    铪酰胺复合物制造方法和含铪氧化物膜

    公开(公告)号:US20110230671A1

    公开(公告)日:2011-09-22

    申请号:US13129490

    申请日:2009-11-11

    IPC分类号: C07F7/00

    摘要: Disclosed is a method of producing a hafnium amide complex represented by general formula: Hf(NR4R5)4, characterized by comprising: carrying out a reduced-pressure distillation after a lithium alkylamide represented by general formula: Li(NR4R5) is added to and allowed to react with a tertiary hafnium alkoxide complex represented by general formula: Hf[O(CR1R2R3)]4. (In the formulas, R1, R2 and R3 independently represent either a phenyl group, a benzyl group, or a primary, secondary or tertiary alkyl group having a carbon number 1-6; and R4 and R5 independently represent either a methyl group or an ethyl group; however, a case where all of R1, R2 and R3 are methyl groups, and a case where one of R1, R2 and R3 is an ethyl group and the other two are methyl groups are excluded.)

    摘要翻译: 公开了一种制备由通式Hf(NR4R5)4表示的铪酰胺络合物的方法,其特征在于包括:在通式为Li(NR4R5)表示的烷基胺锂加入并允许后,进行减压蒸馏 与通式为Hf [O(CR 1 R 2 R 3)] 4表示的叔铪醇盐络合物反应。 (式中,R 1,R 2,R 3独立地表示苯基,苄基或碳原子数为1〜6的伯,仲或叔烷基,R 4和R 5分别独立地表示甲基或 乙基,但R1,R2,R3全部为甲基,R1,R2,R3中的一个为乙基,另外两个为甲基的情况除外)

    Liquid chemical for forming protecting film
    10.
    发明授权
    Liquid chemical for forming protecting film 有权
    用于形成保护膜的液体化学品

    公开(公告)号:US09228120B2

    公开(公告)日:2016-01-05

    申请号:US13253127

    申请日:2011-10-05

    摘要: Disclosed is a liquid chemical for forming a water-repellent protecting film at least on a surface of a recessed portion of an uneven pattern at the time of cleaning a wafer having a finely uneven pattern at its surface and containing silicon at least a part of the uneven pattern. This liquid chemical contains a silicon compound A represented by the general formula: R1aSi(H)bX4-a-b and an acid A, the acid A being at least one selected from the group consisting of trimethylsilyl trifluoroactate, trimethylsilyl trifluoromethanesulfonate, dimethylsilyl trifluoroactate, dimethylsilyl trifluoromethanesulfonate, butyldimethylsilyl trifluoroactate, butyldimethylsilyl trifluoromethanesulfonate, hexyldimethylsilyl trifluoroacetate, hexyldimethylsilyl trifluoromethanesulfonate, octyldimethylsilyl trifluoroactate, octyldimethylsilyl trifluoromethanesulfonate, decyldimethylsilyl trifluoroacetate and decyldimethylsilyl trifluoromethanesulfonate.

    摘要翻译: 公开了一种液体化学品,用于在清洁其表面上具有精细不均匀图案的晶片时至少在凹凸图案的凹部的表面上形成防水保护膜,并且含有硅的至少一部分 图案不均匀 该液体化学品含有由通式R1aSi(H)bX4-ab表示的硅化合物A和酸A,酸A为选自三甲基甲硅烷基三氟甲酸三甲基甲硅烷基酯,三氟甲磺酸三甲基甲硅烷基酯,三氟甲磺酸二甲基甲硅烷基酯,三氟甲磺酸二甲基甲硅烷基酯 丁基二甲基甲硅烷基三氟甲酸酯,丁基二甲基甲硅烷基三氟甲磺酸酯,己基二甲基甲硅烷基三氟乙酸酯,己基二甲基甲硅烷基三氟甲磺酸酯,辛基二甲基甲硅烷基三氟甲酸酯,辛基二甲基甲硅烷基三氟甲磺酸酯,癸基二甲基甲硅烷基三氟乙酸酯和癸基二甲基甲硅烷基三氟甲磺酸酯。