公开(公告)号：US20070278427A1

公开(公告)日：2007-12-06

申请号：US11543346

申请日：2006-10-04

Applicant: Yongzhang Huang ,  Brian S. Freer ,  John Ye ,  Christopher Godfrey ,  Michael A. Graf ,  Patrick Splinter

Inventor： Yongzhang Huang ,  Brian S. Freer ,  John Ye ,  Christopher Godfrey ,  Michael A. Graf ,  Patrick Splinter

IPC: H01J37/317

CPC classification number: H01J37/304 ,  H01J37/3171 ,  H01J2237/24507 ,  H01J2237/24535 ,  H01J2237/31703

Abstract: A method derives a terminal return current or upstream current to adjust and/or compensate for variations in beam current during ion implantation. One or more individual upstream current measurements are obtained from a region of an ion implantation system. A terminal return current, or composite upstream current, is derived from the one or more current measurements. The terminal return current is then employed to adjust scanning or dose of an ion beam in order to facilitate beam current uniformity at a target wafer.

Abstract translation: 一种方法导出终端返回电流或上游电流，以调整和/或补偿离子注入期间束电流的变化。 从离子注入系统的区域获得一个或多个单独的上游电流测量。 从一个或多个电流测量导出终端返回电流或复合上游电流。 然后使用端子返回电流来调整离子束的扫描或剂量，以便于目标晶片处的束电流均匀性。