公开(公告)号：US20050046028A1

公开(公告)日：2005-03-03

申请号：US10930164

申请日：2004-08-30

申请人： Byung Jung

发明人： Byung Jung

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/485 ,  H01L21/44 ,  H01L23/48

CPC分类号： H01L21/76843 ,  H01L21/28562 ,  H01L21/76876 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device and a method for fabricating the same is disclosed, to prevent a defective contact of a line in a method of completely filling a minute contact hole having a high aspect ratio with a refractory metal layer, which includes the steps of forming a contact hole in an insulating interlayer of a semiconductor substrate; depositing a barrier metal layer on an inner surface of the contact hole and an upper surface of the insulating interlayer, wherein the process of depositing the barrier metal is performed by sequentially progressing one cycle of: injecting a reaction gas of SiH4 to the chamber, injecting a first purging gas to the chamber, injecting a reaction gas of WF6 to the chamber; injecting a second purging gas to the chamber, injecting a reaction gas of NH3 to the chamber, and injecting a third purging gas to the chamber; depositing a first metal layer for nucleation on the barrier metal layer by the atomic layer deposition process; and depositing a second metal layer on the first metal layer inside the contact hole, to fill the contact hole completely.

摘要翻译： 公开了一种半导体器件及其制造方法，以防止在与难熔金属层完全填充具有高纵横比的微小接触孔的方法中线的接触不良，其包括形成接触的步骤 在半导体衬底的绝缘中间层中的孔; 在所述接触孔的内表面和所述绝缘中间层的上表面上沉积阻挡金属层，其中所述沉积阻挡金属的过程是通过依次进行以下一个循环来进行：将SiH 4的反应气体注入到所述室中， 将第一吹扫气体注入到室中，将WF6的反应气体注入到室中; 向所述室注入第二吹扫气体，将NH 3的反应气体注入所述室，以及向所述室注入第三吹扫气体; 通过原子层沉积工艺在阻挡金属层上沉积成核的第一金属层; 以及在接触孔内的第一金属层上沉积第二金属层，以完全填充接触孔。