公开(公告)号：US20160126017A1

公开(公告)日：2016-05-05

申请号：US14898678

申请日：2014-06-04

Applicant: CAVENDISH KINETICS, INC.

Inventor： Robertus Petrus VAN KAMPEN ,  Richard L. KNIPE

IPC: H01G5/16 ,  H01L49/02

CPC classification number: H01G5/16 ,  H01G5/18 ,  H01L28/60

Abstract: The present invention generally relates to a MEMS digital variable capacitor (DVC) (900) and a method for manufacture thereof. The movable plate (938) within a MEMS DVC should have the same stress level to ensure proper operation of the MEMS DVC. To obtain the same stress level, the movable plate is decoupled from CMOS ground during fabrication. The movable plate is only electrically coupled to CMOS ground after the plate has been completely formed. The coupling occurs by using the same layer (948) that forms the pull-up electrode as the layer that electrically couples the movable plate to CMOS ground. As the same layer couples the movable plate to CMOS ground and also provides the pull-up electrode for the MEMS DVC, the deposition occurs in the same processing step. By electrically coupling the movable plate to CMOS ground after formation, the stress in each of the layers of the movable plate can be substantially identical.

Abstract translation: 本发明一般涉及一种MEMS数字可变电容器（DVC）（900）及其制造方法。 MEMS DVC内的可移动板（938）应具有相同的应力水平，以确保MEMS DVC的正常工作。 为了获得相同的应力水平，在制造过程中可移动板与CMOS接地分离。 在板已经完全形成之后，可移动板仅电连接到CMOS接地。 通过使用形成上拉电极的相同层（948）作为将可移动板电耦合到CMOS地的层而发生耦合。 由于相同的层将可移动板耦合到CMOS地，并且还为MEMS DVC提供上拉电极，所以沉积在相同的处理步骤中发生。 通过在形成后将可动板电耦合到CMOS地，可移动板的每个层中的应力可以是基本相同的。

公开(公告)号：US20160072408A1

公开(公告)日：2016-03-10

申请号：US14889118

申请日：2014-05-16

Applicant: CAVENDISH KINETICS, INC

Inventor： Cong Quoc KHIEU ,  James Douglas HUFFMAN ,  Richard L. KNIPE ,  Vikram JOSHI ,  Robertus Petrus VAN KAMPEN

IPC: H02N1/00 ,  H01G5/18 ,  H01G5/011 ,  B81B7/02

CPC classification number: H02N1/006 ,  B81B7/008 ,  B81B7/02 ,  B81B2201/0221 ,  H01G5/011 ,  H01G5/18 ,  H01H59/0009 ,  H03J2200/39

Abstract: The present invention generally relates to a method of operating a MEMS DVC while minimizing impact of the MEMS device on contact surfaces. By reducing the drive voltage upon the pull-in movement of the MEMS device, the acceleration of the MEMS device towards the contact surface is reduced and thus, the impact velocity is reduced and less damage of the MEMS DVC device occurs.

Abstract translation: 本发明一般涉及一种操作MEMS DVC的方法，同时最小化MEMS器件对接触表面的影响。 通过在MEMS器件的拉入运动时降低驱动电压，MEMS器件朝向接触表面的加速度减小，因此冲击速度降低，并且MEMS DVC器件的损坏较小。

公开(公告)号：US20160055980A1

公开(公告)日：2016-02-25

申请号：US14779542

申请日：2014-04-02

Applicant: CAVENDISH KINETICS, INC

Inventor： Richard L. KNIPE ,  Robertus Petrus VAN KAMPEN

IPC: H01G5/18 ,  H01G5/013 ,  H01G5/011

CPC classification number: H01G5/18 ,  B81B3/0051 ,  B81B3/007 ,  B81B2201/0221 ,  H01G5/011 ,  H01G5/0136 ,  H01G5/16 ,  H01H59/0009 ,  H01H2059/0072

Abstract: The present invention generally relates to a MEMS DVC and a method for fabrication thereof. The MEMS DVC comprises a plate movable from a position spaced a first distance from an RF electrode and a second position spaced a second distance from the RF electrode that is less than the first distance. When in the second position, the plate is spaced from the RF electrode by a dielectric layer that has an RF plateau over the RF electrode. One or more secondary landing contacts and one or more plate bend contacts may be present as well to ensure that the plate obtains a good contact with the RF plateau and a consistent C max value can be obtained. On the figure PB contact is the plate bend contact, SL contact is the Second Landing contact and the PD electrode is the Pull Down electrode.

Abstract translation: 本发明一般涉及一种MEMS DVC及其制造方法。 MEMS DVC包括可从距离RF电极间隔第一距离的位置移动的板和距离RF电极间隔第二距离的第二位置小于第一距离的板。 当处于第二位置时，板通过在RF电极上具有RF平台的电介质层与RF电极间隔开。 还可以存在一个或多个次级着陆触点和一个或多个板弯曲触点，以确保该板获得与RF平台的良好接触，并且可以获得一致的C max值。 在图中，PB接触是板弯接触，SL接触是第二着陆接触，PD电极是下拉电极。