Methods for manufacturing glass articles

    公开(公告)号:US11485663B2

    公开(公告)日:2022-11-01

    申请号:US16542585

    申请日:2019-08-16

    Abstract: Methods of producing a glass article include melting a first glass composition and feeding a second glass composition into the melter. Both glass compositions include the same combination of components but at least one component has a concentration that is different in each. At least three glass articles may be drawn from the melter, including: a first glass article formed from the first glass composition; at least one intermediate glass article composed of neither the first nor the second glass composition; and a final glass article not composed of the first glass composition. The concentration of the at least one component in the intermediate glass article may be between the concentration in the first and second glass compositions. The first glass article and final glass article may have differing values for certain properties, and the intermediate glass article may have an intermediate set of values for the same properties.

    Thin glass or ceramic substrate for silicon-on-insulator technology

    公开(公告)号:US11328950B2

    公开(公告)日:2022-05-10

    申请号:US17153041

    申请日:2021-01-20

    Abstract: Embodiments of the disclosure relate to a method for fabricating semiconductor-on-insulator (SemOI) electronic components. In the method, a device wafer is bonded to a handling wafer. The device wafer includes a semiconductor device layer and a buried oxide layer. A substrate is adhered to the handling wafer. The substrate is a glass or a ceramic, and bonding occurs at an interface between the semiconductor device layer and the substrate. Material is removed from the device wafer to expose the buried oxide layer. The substrate is debonded from the handling wafer so as to provide an SemOI electronic component including the substrate, the semiconductor device layer, and the buried oxide layer.

    THIN GLASS OR CERAMIC SUBSTRATE FOR SILICON-ON-INSULATOR TECHNOLOGY

    公开(公告)号:US20210225693A1

    公开(公告)日:2021-07-22

    申请号:US17153041

    申请日:2021-01-20

    Abstract: Embodiments of the disclosure relate to a method for fabricating semiconductor-on-insulator (SemOI) electronic components. In the method, a device wafer is bonded to a handling wafer. The device wafer includes a semiconductor device layer and a buried oxide layer. A substrate is adhered to the handling wafer. The substrate is a glass or a ceramic, and bonding occurs at an interface between the semiconductor device layer and the substrate. Material is removed from the device wafer to expose the buried oxide layer. The substrate is debonded from the handling wafer so as to provide an SemOI electronic component including the substrate, the semiconductor device layer, and the buried oxide layer.

    Glass-ceramic articles, compositions, and methods of making the same

    公开(公告)号:US11370693B2

    公开(公告)日:2022-06-28

    申请号:US16750570

    申请日:2020-01-23

    Abstract: A glass-ceramic article that includes an article having a glass-ceramic composition, the composition including: SiO2 from about 45% to about 65%, Al2O3 from about 14% to about 28%, TiO2 from about 2% to about 4%, ZrO2 from about 3% to about 4.5%, MgO from about 4.5% to about 12%, and ZnO from about 0.1 to about 4% (by weight of oxide). The article can include a coefficient of thermal expansion (CTE) of about 20×10−7 K−1 to about 160×10−7 K−1, as measured over a temperature range from 25° C. to 300° C.

    GLASS WAFERS FOR SEMICONDUCTOR DEVICE FABRICATION

    公开(公告)号:US20210159076A1

    公开(公告)日:2021-05-27

    申请号:US17104723

    申请日:2020-11-25

    Abstract: Embodiments of a glass wafer for semiconductor fabrication processes are described herein. In some embodiments, a glass wafer includes: a glass substrate comprising: a top surface, a bottom surface opposing the top surface, and an edge surface between the top surface and the bottom surface; a first coating disposed atop the glass substrate, wherein the first coating is a doped crystalline silicon coating having a sheet-resistance of 100 to 1,000,000 ohm per square; and a second coating having one or more layers disposed atop the glass substrate, wherein the second coating comprises a silicon containing coating, wherein the glass wafer has an average transmittance (T) of less than 50% over an entire wavelength range of 400 nm to 1000 nm.

    GLASS-CERAMIC ARTICLES, COMPOSITIONS, AND METHODS OF MAKING THE SAME

    公开(公告)号:US20200239352A1

    公开(公告)日:2020-07-30

    申请号:US16750570

    申请日:2020-01-23

    Abstract: A glass-ceramic article that includes an article having a glass-ceramic composition, the composition including: SiO0 from about 45% to about 65%, Al2O3 from about 14% to about 28%, TiO2 from about 2% to about 4%, ZrO2 from about 3% to about 4.5%, MgO from about 4.5% to about 12%, and ZnO from about 0.1 to about 4% (by weight of oxide). The article can include a coefficient of thermal expansion (CTE) of about 20×10−7K−1 to about 160×10−7K−1, as measured over a temperature range from 25° C. to 300° C.

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